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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL60S216

Name: IRL60S216
Brand: Infineon Technologies
SKU: IRL60S216
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL60S216

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL60S216.pdf

Description:: MOSFET N-CH 60V 195A D2PAK

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Product details

Overview

IRL60S216 from Infineon Technologies is a 60V, logic-level N-channel HEXFET® Power MOSFET in D²PAK (TO-263) package, optimized for high-current synchronous rectification and half/full-bridge motor drive. It delivers 1.6 mΩ typical R_DS(on) at V_GS = 10 V, supports 195 A continuous drain current (package-limited), and features enhanced body diode dV/dt (9.5 V/ns) and dI/dt capability for robust BLDC inverter operation.

For engineers reviewing the IRL60S216 datasheet, IRL60S216 pinout, IRL60S216 application, or IRL60S216 equivalent, key selection considerations include its 60 V V_DSS, 1.6 mΩ R_DS(on) at 10 V gate drive, 780 A pulsed drain rating, avalanche energy rating (530 mJ single-pulse), and suitability for battery-powered DC/DC converters and OR-ing power switches.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and trench-enhanced body diode design to achieve low conduction loss while maintaining high dynamic ruggedness. Its gate threshold voltage (1.0–2.4 V) enables reliable turn-on with 3.3 V and 5 V logic controllers, and its fully characterized C_iss (15,330 pF), C_oss (1260 pF), and Q_g (170–255 nC) support precise switching loss modeling in resonant and hard-switched topologies.

The device is rated for operation from –55 °C to +175 °C junction temperature, with R_θJC = 0.4 °C/W enabling high-power thermal management on standard PCBs or heatsinks. Its avalanche-rated construction (E_AS = 530 mJ, I_AR = 100 A) allows safe unclamped inductive switching in motor control and DC/AC inverters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; defines use in ≤48 V nominal bus systems (e.g., 42 V automotive, 48 V server PSUs).
R_DS(on) typ.	1.6 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.6 W conduction loss at 100 A, critical for high-efficiency synchronous rectifiers.
I_D (pkg-lim)	195 A @ T_C = 25 °C - Package-limited continuous current; sets copper trace and heatsink sizing for PCB-mounted designs.
Q_g max	255 nC - Total gate charge determines driver strength requirement; mandates ≥2 A peak gate driver for <100 ns switching transitions.
E_AS	530 mJ (single-pulse) - Specifies maximum inductive energy the MOSFET can absorb without failure; validates use in unclamped inductive loads like motor phases.
V_SD	1.2 V @ I_S = 100 A, T_J = 25 °C - Low body diode forward voltage reduces reverse conduction loss in half-bridge freewheeling.
dV/dt (diode)	9.5 V/ns @ T_J = 175 °C - High diode recovery dv/dt tolerance prevents false turn-on during fast commutation in BLDC drives.

Pinout & Package

IRL60S216 is housed in a surface-mount D²PAK (TO-263) package with exposed drain pad for thermal and electrical performance. The package has three terminals: Drain (D), Source (S), and Gate (G), arranged in a single-row configuration compatible with standard reflow soldering profiles.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path terminal	Internally connected to large copper die attach area; must be soldered to thermal pad for R_θJC = 0.4 °C/W performance.
Source (S)	Reference node for gate drive and current sensing	Common return path for load current; used as ground reference for gate driver ICs in high-side configurations.
Gate (G)	Control electrode for channel modulation	High-impedance input requiring low-inductance routing; sensitive to ringing-requires local 10 Ω gate resistor and 10 nF gate-to-source capacitor for stability.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed turn-on at V_GS ≥ 4.5 V, enabling direct interface with 3.3 V/5 V microcontrollers and gate drivers without level-shifting.
Fully characterized avalanche SOA	Single-pulse E_AS = 530 mJ and repetitive E_AR validated per JEDEC JESD24-11, supporting reliable operation in unclamped inductive switching.
Enhanced body diode dI/dt capability	Rated for di/dt ≤ 1100 A/µs with I_SD ≤ 100 A, reducing risk of diode-induced shoot-through in synchronous rectifier and H-bridge applications.
Lead-free and RoHS-compliant construction	Meets IPC/JEDEC J-STD-020D moisture sensitivity level 3 (MSL3), qualified for lead-free reflow up to 260 °C peak.
Optimized output capacitance profile	C_oss = 1260 pF (energy-related) and C_{oss eff.(TR)} = 1640 pF enable accurate soft-switching timing prediction in LLC and ZVS converters.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: Bidirectional 24–48 V brushed DC motor control in power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology, handling 150 A peak currents with minimal conduction loss.

Use Value: 1.6 mΩ R_DS(on) limits I²R loss to <3.6 W at 150 A, enabling compact heatsink-free designs in portable equipment.

Use Scenario: Upper-leg switching in 3-phase BLDC inverter for e-bike and HVAC fan drives.

IC Role / Device Role / Timing Role: High-side power switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 9.5 V/ns diode dv/dt rating prevents parasitic turn-on during fast phase-voltage transitions, eliminating need for external gate clamping.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in isolated 48 V input DC/DC converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Synchronous replacement for Schottky diodes in forward or LLC topologies, driven by transformer-coupled or controller-synchronized signals.

Use Value: 1.2 V V_SD and low Q_rr (87 nC) reduce reverse recovery loss by >60% versus 45 V Schottky diodes, improving efficiency at 200 kHz switching.

Use Scenario: Redundant 12–48 V DC power rail combining in industrial PLCs and network switches.

IC Role / Device Role / Timing Role: Low-loss, bidirectional OR-ing switch placed between parallel power sources to prevent backfeed and enable hot-swap.

Use Value: 195 A package-limited current and 60 V V_DSS support dual 100 A/48 V inputs with <20 mV forward drop at 100 A, minimizing insertion loss and thermal rise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 1.7 mΩ R_DS(on), 220 A package rating, but higher Q_g (320 nC) and no specified diode dv/dt rating.	Lacks validated diode dV/dt performance; unsuitable for high-di/dt BLDC freewheeling without additional gate damping.	Select when gate drive strength exceeds 3 A and diode recovery stress is low; avoid in high-speed motor inverters.
IXFH60N60X3	600 V, 22 mΩ R_DS(on), 60 A rating - not voltage- or current-compatible; belongs to different voltage class.	Designed for high-voltage PFC and SMPS primary side, not low-voltage high-current switching.	Not functionally comparable; only consider if system requires 600 V blocking and lower current density.

Compared with STL220N6F7 and IXFH60N60X3, IRL60S216 uniquely balances ultra-low R_DS(on), logic-level gate drive, and rigorously characterized diode dynamics-making it the only viable choice for 48 V BLDC inverters and synchronous rectifiers demanding <100 ns switching and >1000 A/µs di/dt immunity.

Availability

IRL60S216 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and OR-ing power switches requiring stable component supply across industrial automation, e-mobility, and telecom infrastructure programs.

Supply support for IRL60S216 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the StrongIRFET™ family of logic-level HEXFET® MOSFETs, engineered specifically for high-efficiency, high-current switching in battery-powered and thermally constrained applications such as motor drives and DC/DC conversion.

FAQ

What is the maximum continuous drain current for IRL60S216 at 100°C case temperature?

The maximum continuous drain current at T_C = 100 °C is 195 A, limited by wire bond capacity-not silicon. This value remains constant up to 100 °C due to package derating constraints; beyond that, current must be reduced per the linear derating factor of 2.5 W/°C applied to the 375 W P_D rating.

Can IRL60S216 be used with 3.3 V microcontroller GPIOs without a gate driver?

No-while V_GS(th) starts at 1.0 V, full enhancement requires ≥4.5 V for R_DS(on) ≤ 2.2 mΩ. A 3.3 V GPIO cannot reliably achieve low on-resistance; a dedicated gate driver (e.g., IR2110, TC4427) is required to deliver ≥10 V with ≥2 A peak current for optimal switching performance and thermal margin.

Is the body diode of IRL60S216 suitable for reverse recovery in hard-switched converters?

Yes-the body diode is fully characterized for reverse recovery: Q_rr = 87 nC (T_J = 25 °C), t_rr = 52 ns, and dv/dt = 9.5 V/ns at T_J = 175 °C. These values are measured under standardized conditions (IF = 100 A, di/dt = 100 A/µs, V_DD = 51 V) and support use in hard-switched synchronous rectifiers up to 200 kHz.

What thermal interface material is recommended for mounting IRL60S216's exposed drain pad?

A 60–100 µm thick thermal interface material with 1.5–3.0 W/m·K conductivity (e.g., Henkel ECCOBOND® TG7200 or Parker Chomerics THERM-A-GAP® G300) is recommended. The drain pad must cover ≥90% of the PCB thermal pad area, and solder paste stencil aperture should be 50–60% open area to prevent voiding and ensure R_θJC ≤ 0.4 °C/W performance.

IRL60S216 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.95mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 255 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRL60S216 FAQ

1.How can I place an order for IRL60S216 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL60S216 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL60S216 reliable?

The price and inventory of IRL60S216 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL60S216 is usually 5 days.

3.What payment methods are accepted for IRL60S216?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL60S216 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL60S216?

IRL60S216 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL60S216 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL60S216?

For technical support, including IRL60S216 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL60S216 requirements.

6.How does Aetrix verify that IRL60S216 is sourced from the original manufacturer or authorized distributors?

All IRL60S216 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL60S216 meets industry standards.

7.What is the process for return or replacement of IRL60S216?

All IRL60S216 units undergo pre-shipment inspection (PSI). If there is an issue with IRL60S216, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL60S216 part is unused and in its original packaging.

Return procedure for IRL60S216:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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