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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL60SC216ARMA1

Name: IRL60SC216ARMA1
Brand: Infineon Technologies
SKU: IRL60SC216ARMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL60SC216ARMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IRL60SC216ARMA1.pdf

Description:: MOSFET N-CH 60V 324A TO263-7

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Product details

Overview

IRL60SC216ARMA1 from Infineon Technologies is a 60 V, 1.2 mΩ typ N-channel Trench MOSFET in D²-PAK (PG-TO263-7) package with drain-tab thermal design, logic-level gate drive (V_GS(th) = 1.0–2.4 V), and 324 A silicon-limited continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification in server VRMs and industrial DC-DC converters.

For engineers reviewing the IRL60SC216ARMA1 datasheet, IRL60SC216ARMA1 pinout, IRL60SC216ARMA1 application, or IRL60SC216ARMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V (1.4 mΩ max), Q_g = 174 nC, 175 °C rated junction temperature, and D²-PAK 7-pin layout with integrated drain tab for low-inductance, high-current PCB mounting.

Technical Context

This device implements Infineon's StrongIRFET™ trench-gate process with optimized cell pitch and deep-trench shielding to achieve ultra-low R_DS(on) while maintaining robust avalanche capability (E_AS = 531 mJ). Its gate threshold voltage range (1.0–2.4 V) ensures reliable turn-on with standard 3.3 V/5 V logic drivers without level-shifting.

The D²-PAK 7-pin package features an exposed drain tab (Pin 1) and six parallel source terminals (Pins 2–7), enabling <1.5 mΩ total package resistance and thermal resistance R_thJC = 0.4 °C/W - critical for high-density power stages where conduction loss and thermal management dominate system efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V input bus architectures with 20 % margin for transient overvoltage
R_DS(on), typ	1.2 mΩ @ V_GS = 10 V, I_D = 100 A - enables sub-120 W conduction loss at 300 A in paralleled configurations
I_D (silicon-limited)	324 A @ T_C = 25 °C - defines maximum sustainable DC current before thermal runaway under ideal heatsinking
Q_g	174 nC @ V_GS = 0–4.5 V - determines gate driver power requirement and switching loss in hard-switched topologies
T_j max	175 °C - allows operation in high-ambient environments (e.g., sealed server chassis) without derating below 150 °C parts
V_GS(th)	1.0–2.4 V - guarantees full enhancement with 3.3 V microcontroller GPIO or dedicated logic-level gate drivers
C_iss	16,000 pF @ V_DS = 30 V - impacts EMI filtering design and Miller-effect-induced shoot-through risk during high-dV/dt transitions

Pinout & Package

D²-PAK (PG-TO263-7) package with isolated gate lead, single large drain tab (electrically connected to Pin 1), and six parallel source terminals (Pins 2–7) for minimized source inductance and uniform current sharing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain Tab)	Main Drain Connection	Exposed copper pad soldered directly to PCB power plane - carries full load current and serves as primary thermal path to heatsink
Pin 2–7	Source Terminals	Six independent source leads bonded in parallel to reduce package source inductance (<1.2 nH) and improve current distribution in high-frequency switching
Gate Lead (isolated)	Control Input	Single small-signal lead routed away from power paths to minimize gate loop inductance and prevent oscillation

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.2 mΩ typ @ 10 V enables >98 % efficiency in 48 V → 12 V buck converters at 200 A output
Logic-level gate drive	V_GS(th) ≤ 2.4 V ensures full enhancement using standard 3.3 V FPGA I/O or MCU pins without external level shifters
175 °C rated junction	Extends lifetime by 2× versus 150 °C-rated MOSFETs in thermally constrained server PSU modules
Halogen-free construction	Complies with IEC61249-2-21 - eliminates brominated flame retardants for RoHS-compliant industrial and telecom applications
Optimized for distribution availability	PG-TO263-7 footprint aligns with broad distributor inventory systems, reducing lead time risk for volume production

Applications

Server Voltage Regulator Modules (VRMs)

Industrial 48 V DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 48 V intermediate bus in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating in continuous conduction mode (CCM) with 300–500 kHz switching frequency and <100 ns dead-time control.

Use Value: 1.2 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 2.0 mΩ devices, lowering VRM temperature rise by 12 °C at 300 A.

Use Scenario: Isolated half-bridge DC-DC stage converting 48 V telecom input to 12 V/24 V for PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward topology, handling 100–200 A peak currents with 100 kHz switching.

Use Value: 175 °C rating allows sustained 150 °C case temperature in sealed enclosures, eliminating forced-air cooling requirements.

Automotive On-Board Charger (OBC) DC-DC Stage

Renewable Energy Battery Management Systems

Use Scenario: Secondary-side synchronous rectifier in bidirectional OBC DC-DC stage interfacing 400 V battery with 12 V auxiliary network.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge configuration, conducting up to 280 A RMS during charging cycles.

Use Value: 324 A silicon-limited current supports 2× peak overload capacity required for ISO 16750-2 pulse testing without derating.

Use Scenario: High-current isolation switch in 48–576 V battery string protection circuits for residential solar storage systems.

IC Role / Device Role / Timing Role: Solid-state contactor replacement controlling charge/discharge paths between Li-ion battery banks and inverters.

Use Value: 531 mJ single-pulse avalanche energy withstands 100 A short-circuit events for ≥10 µs - meeting UL 1973 fault-clearing timing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.35 mΩ @ 10 V; Q_g = 192 nC; TO-263-7 package	Higher gate charge increases driver losses by ~10 % in 500 kHz designs	Preferred when STMicroelectronics supply chain alignment is required and 0.15 mΩ R_DS(on) penalty is acceptable
IXFN300N075T2	R_DS(on) = 0.75 mΩ @ 10 V; TO-264 package; requires 10 V min gate drive	Larger TO-264 footprint and higher V_GS(th) (2.5–4.5 V) limit use with 3.3 V controllers	Select only when sub-1 mΩ R_DS(on) justifies larger board area and gate driver redesign

Compared with STL220N6F7 and IXFN300N075T2, the IRL60SC216ARMA1 delivers optimal balance of ultra-low on-resistance, true logic-level compatibility, and industry-standard D²-PAK thermal performance - making it the preferred choice for space-constrained, high-reliability 48 V power conversion where gate drive simplicity and thermal headroom are critical.

Availability

IRL60SC216ARMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and automotive on-board charger DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for IRL60SC216ARMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The StrongIRFET™ product line targets high-efficiency, high-current power conversion applications - specifically engineered for server, telecom, and industrial SMPS where low R_DS(on), fast switching, and rugged thermal performance define system-level competitiveness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRL60SC216ARMA1 supports 229 A continuous drain current at T_C = 100 °C per datasheet Table 2, reflecting thermal derating due to reduced heat transfer efficiency at elevated temperatures. This value assumes proper PCB copper area (≥1″² FR-4) and thermal interface to heatsink.

Does this MOSFET include an integrated body diode suitable for synchronous rectification?

Yes - the intrinsic body diode has V_SD = 1.2 V at I_F = 100 A and T_j = 25 °C (Table 7), with t_rr = 40 ns and Q_rr = 52 nC. These parameters enable efficient synchronous rectification in buck and forward converters without external Schottky diodes.

Can the IRL60SC216ARMA1 be driven directly from a 3.3 V microcontroller GPIO?

Yes - its V_GS(th) range (1.0–2.4 V) and guaranteed R_DS(on) of 1.5 mΩ max at V_GS = 4.5 V ensure full enhancement with 3.3 V logic. However, gate resistor selection must limit peak current to avoid GPIO damage during fast switching transitions.

What is the thermal resistance from junction to case (R_thJC) and how is it measured?

R_thJC = 0.4 °C/W (Table 3), measured with junction temperature ≈ 90 °C per JEDEC JESD51-14. This value applies to the drain tab only and assumes direct metal-to-metal contact with heatsink; PCB copper area contributes additional thermal resistance not included in this parameter.

IRL60SC216ARMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 324A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 218 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 16000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IRL60SC216ARMA1 FAQ

1.How can I place an order for IRL60SC216ARMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL60SC216ARMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL60SC216ARMA1 reliable?

The price and inventory of IRL60SC216ARMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL60SC216ARMA1 is usually 5 days.

3.What payment methods are accepted for IRL60SC216ARMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL60SC216ARMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL60SC216ARMA1?

IRL60SC216ARMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL60SC216ARMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL60SC216ARMA1?

For technical support, including IRL60SC216ARMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL60SC216ARMA1 requirements.

6.How does Aetrix verify that IRL60SC216ARMA1 is sourced from the original manufacturer or authorized distributors?

All IRL60SC216ARMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL60SC216ARMA1 meets industry standards.

7.What is the process for return or replacement of IRL60SC216ARMA1?

All IRL60SC216ARMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRL60SC216ARMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL60SC216ARMA1 part is unused and in its original packaging.

Return procedure for IRL60SC216ARMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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