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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL6342TRPBF

Name: IRL6342TRPBF
Brand: Infineon Technologies
SKU: IRL6342TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL6342TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRL6342TRPBF.pdf

Description:: MOSFET N-CH 30V 9.9A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:2,087

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Product details

Overview

IRL6342TRPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 9.9 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for low-voltage DC-DC conversion and synchronous rectification with R_DS(on) = 14.6 mΩ @ V_GS = 4.5 V, Q_g = 11 nC, and integrated body diode. It enables high-efficiency power stages in portable computing and USB-C PD adapters.

For engineers reviewing the IRL6342TRPBF datasheet, IRL6342TRPBF pinout, IRL6342TRPBF application, or IRL6342TRPBF equivalent, key selection criteria include gate threshold voltage (0.5–1.1 V), pulsed drain current (79 A), thermal resistance (R_θJA = 50 °C/W), and SO-8 tape-and-reel packaging for automated SMT assembly.

Technical Context

This MOSFET operates as a single N-channel switching element with logic-level gate drive compatibility (V_GS(th) ≤ 1.1 V), enabling direct interface with 3.3 V and 5 V microcontrollers. Its low R_DS(on) and fast switching parameters (t_d(on) = 6 ns, t_f = 14 ns) support high-frequency PWM operation up to 1 MHz in buck converters.

The device integrates a robust body diode with reverse recovery charge Q_rr = 5.2–7.8 nC and trr = 13–20 ns, supporting synchronous rectification without external Schottky diodes. Thermal design is aided by MSL1 qualification and R_θJL = 20 °C/W (junction-to-drain lead).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V rail applications and USB-C PD secondary-side switches
R_DS(on) max @ 4.5 V	14.6 mΩ - Enables <1 W conduction loss at 9.9 A continuous drain current in compact layouts
Q_g typical	11 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength (e.g., TC4427)
I_D @ T_A = 25°C	9.9 A - Continuous load capability on 1-inch² copper board without forced air cooling
V_GS(th)	0.5–1.1 V - Ensures full enhancement with 3.3 V GPIOs, eliminating need for level-shifting circuitry
Q_rr	5.2–7.8 nC - Reduces switching losses and EMI in synchronous rectifier configurations
R_θJA	50 °C/W - Allows thermal margin up to 125°C junction temperature in consumer-grade ambient conditions

Pinout & Package

IRL6342TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal performance. Dimensions: 4.9 × 6.0 × 1.75 mm (0.193 × 0.236 × 0.069 in). Moisture Sensitivity Level: MSL1 (unlimited floor life).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D), Source (S), Gate (G)	Pins 1–3 and 5–8 are internally connected to drain; Pin 4 is gate; Pins 6–8 are source - standard SO-8 HEXFET layout per IR datasheet Fig. 18a

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 1.1 V ensures reliable turn-on from 3.3 V MCU outputs without gate boosting
Low gate charge	Q_g = 11 nC minimizes driver power consumption and propagation delay in high-speed switching
Enhanced body diode	Q_rr = 5.2–7.8 nC and trr = 13–20 ns enable stable synchronous rectification in buck topologies
Thermally robust construction	MSL1 rating and R_θJL = 20 °C/W allow direct soldering to PCB copper pour for heat spreading

Applications

Server VRM Power Stage

USB-C PD Adapter Secondary Side

Use Scenario: High-current, high-efficiency point-of-load regulation in dual-phase 12 V input server VRMs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 14.6 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 25 mΩ MOSFETs, improving 12 V → 1.8 V conversion efficiency to >92%.

Use Scenario: Secondary-side synchronous rectification in 65 W USB-C PD chargers using active clamp flyback topology.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch replacing Schottky diode, driven by dedicated SR controller (e.g., MP6908).

Use Value: Q_rr ≤ 7.8 nC and V_F = 1.2 V body diode drop reduce switching loss and thermal stress, enabling 10 mm height compliance.

Portable SSD Power Management

Industrial PLC I/O Module

Use Scenario: Load switching and overcurrent protection for NVMe SSD 3.3 V and 1.8 V rails in ultrabooks.

IC Role / Device Role / Timing Role: Hot-swap FET and power path controller with fast fault response (<1 µs) via gate monitoring.

Use Value: V_GS(th) ≤ 1.1 V allows direct control from 1.8 V LDO output, eliminating level shifters and reducing BOM count.

Use Scenario: Isolated digital output driver stage supplying 24 V DC to solenoids and relays in DIN-rail PLC modules.

IC Role / Device Role / Timing Role: Low-side power switch controlled by optocoupled microcontroller output with galvanic isolation.

Use Value: 79 A pulsed drain current supports inductive kickback suppression without snubbers, extending relay contact life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6342TRPBF	Same die in SOT-23 package; R_DS(on) = 14.6 mΩ @ 4.5 V but lower I_D = 4.3 A; higher R_θJA = 125 °C/W	Suitable only for sub-3 A loads; not viable for 9.9 A continuous applications	Select when board space is critical and current demand ≤4 A; avoid for SO-8 footprint replacement
SI2302DS-T1-GE3	R_DS(on) = 35 mΩ @ 4.5 V; V_GS(th) = 0.6–1.2 V; Q_g = 4.5 nC; SOT-23 package	Limited to ≤2 A continuous; better for ultra-low-power always-on circuits than high-current switching	Prefer for battery-powered sensor nodes where gate charge dominates efficiency; not a functional substitute for IRL6342TRPBF's 9.9 A rating

Compared with IRL6342TRPBF, the IRLML6342TRPBF offers identical electrical specs in a smaller package but sacrifices current handling and thermal performance, while the SI2302DS-T1-GE3 trades R_DS(on) and current capability for minimal gate charge-making it suitable only for low-power edge cases, not primary power switching.

Availability

IRL6342TRPBF is available at Aetrix Electronics and suitable for server VRM power stages, USB-C PD adapter secondary-side rectification, and industrial PLC I/O modules requiring stable component supply and SO-8 tape-and-reel compatibility for high-volume SMT production.

Supply support for IRL6342TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRL6342TRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, low-voltage DC-DC conversion in space-constrained consumer and computing applications.

FAQ

What is the maximum continuous drain current for IRL6342TRPBF at 70°C ambient?

The maximum continuous drain current at T_A = 70°C is 7.9 A under standard SO-8 mounting conditions (1 inch² copper board). This derating reflects thermal limits imposed by R_θJA = 50 °C/W and T_J(max) = 150°C. Exceeding this requires enhanced heatsinking or forced airflow.

Does IRL6342TRPBF have avalanche ruggedness specified?

Yes-datasheet Figure 14 specifies single-pulse avalanche energy (E_AS) up to 250 mJ at I_D = 7.9 A and starting T_J = 25°C. The device is rated for unclamped inductive switching per JEDEC JESD24-11, making it suitable for flyback and active-clamp topologies with controlled energy dissipation.

Can IRL6342TRPBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (Fig. 4) ensures inherent current sharing across paralleled devices. For stable operation, match gate drive impedance and PCB trace lengths, and maintain symmetrical thermal coupling to prevent thermal runaway above 125°C junction temperature.

Is the body diode suitable for reverse recovery in hard-switched topologies?

The body diode has trr = 13–20 ns and Q_rr = 5.2–7.8 nC, which supports hard-switched operation up to ~300 kHz. At higher frequencies or with high di/dt (>100 A/µs), use gate timing control to minimize reverse recovery stress and avoid voltage overshoot exceeding V_DS = 30 V rating.

IRL6342TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 14.6mOhm @ 9.9A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1025 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRL6342TRPBF FAQ

1.How can I place an order for IRL6342TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL6342TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL6342TRPBF reliable?

The price and inventory of IRL6342TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL6342TRPBF is usually 5 days.

3.What payment methods are accepted for IRL6342TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL6342TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL6342TRPBF?

IRL6342TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL6342TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL6342TRPBF?

For technical support, including IRL6342TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL6342TRPBF requirements.

6.How does Aetrix verify that IRL6342TRPBF is sourced from the original manufacturer or authorized distributors?

All IRL6342TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL6342TRPBF meets industry standards.

7.What is the process for return or replacement of IRL6342TRPBF?

All IRL6342TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL6342TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL6342TRPBF part is unused and in its original packaging.

Return procedure for IRL6342TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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