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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL7833S

Name: IRL7833S
Brand: Infineon Technologies
SKU: IRL7833S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL7833S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL7833S.pdf

Description:: MOSFET N-CH 30V 150A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,057

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Product details

Overview

IRL7833S from Infineon Technologies is a 30V, 140A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous buck converters and isolated DC-DC converters with synchronous rectification. It delivers 3.1 mΩ R_DS(on) at V_GS = 4.5V, 32 nC total gate charge, and 1.04 °C/W junction-to-case thermal resistance - enabling high-efficiency power delivery in server VRMs and telecom POL modules.

For engineers reviewing the IRL7833S datasheet, IRL7833S pinout, IRL7833S application, or IRL7833S equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), avalanche-rated ruggedness (560 mJ E_AS), body diode reverse recovery performance (Q_rr = 34–51 nC), and thermal management capability under continuous 140A conduction at T_C = 25°C.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and temperature-stable threshold voltage (V_GS(th) = 1.4–2.3 V, tempco –11 mV/°C). Its ultra-low gate impedance supports fast switching with t_r = 50 ns and t_f = 6.9 ns at V_DD = 15 V, ID = 26 A.

The device integrates a robust intrinsic body diode with V_SD ≤ 1.2 V and t_rr = 42–63 ns, enabling reliable synchronous rectification without external Schottky diodes. C_iss = 4170 pF and C_rss = 470 pF support stable operation in hard-switched topologies up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12V/24V input rails with margin against transients
R_DS(on) max @ 4.5V	3.8 mΩ - enables <1W conduction loss at 140A in VRM applications
Q_g	32 nC - balances switching speed and gate driver current requirements
I_D @ T_C = 25°C	140 A - rated for high-current POL stages without forced air cooling
E_AS	560 mJ - withstands single-pulse avalanche stress in synchronous FET failure modes
R_θJC	1.04 °C/W - allows direct heatsink mounting for thermal design simplicity
Q_rr	34–51 nC - determines cross-conduction loss and shoot-through risk in sync rectifiers

Pinout & Package

IRL7833S uses the TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole layout, and 1.1 N·m mounting torque rating for mechanical reliability.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
Source	Power return node / reference for gate drive	Low-inductance connection critical for minimizing V_GS noise during switching
Gate	Control terminal for channel modulation	High-impedance input requiring <32 nC charge for full enhancement at 4.5V logic level

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5V, enabling direct interface with PWM controllers like UCC28220
Ultra-low R_DS(on)	3.1 mΩ typ. @ 4.5V ensures <0.6W conduction loss at 120A in 12V input buck stages
Characterized avalanche energy	560 mJ E_AS supports robustness in hard-switched synchronous rectifier failure events
Low Q_gd/Q_gs1 ratio	Q_gd = 13 nC, Q_gs1 = 8.7 nC - reduces susceptibility to dv/dt-induced turn-on in high-side sync FETs
Lead-free D2Pak-compatible footprint	TO-220AB outline matches industry-standard heatsink clips and PCB footprints used for IRL7833PbF

Applications

Server Voltage Regulator Modules (VRMs)

Telecom Point-of-Load (POL) Converters

Use Scenario: High-current CPU/GPU core power delivery in dual-phase 12V-input VRMs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET, switched complementary to control FET with dead-time control.

Use Value: 3.1 mΩ R_DS(on) at 4.5V gate drive reduces conduction loss by 35% vs. legacy 5V-gate MOSFETs, improving full-load efficiency by >1.2%.

Use Scenario: 48V-to-12V isolated DC-DC converter with synchronous rectification on secondary side in telecom base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC topology, driven by transformer-coupled gate signals.

Use Value: 51 nC Q_rr and 1.2 V V_SD minimize reverse recovery losses and forward drop, increasing conversion efficiency by 0.8–1.1% at 50A load.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Management

Use Scenario: Half-bridge high-side/low-side driver stage in 24V BLDC motor inverters for HVAC blowers and pump controls.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, operated with bootstrap gate drive and 100 ns dead time.

Use Value: 1.04 °C/W R_θJC enables direct heatsink mounting without thermal interface pads, reducing thermal stack-up by 0.35 °C/W in compact enclosures.

Use Scenario: 12V input power supply for radar sensor modules requiring ASIL-B compliant transient robustness.

IC Role / Device Role / Timing Role: Primary-side switch in isolated flyback converter powering 3.3V/5V domain for SoC and imaging sensors.

Use Value: 560 mJ E_AS rating exceeds ISO 7637-2 pulse 5a requirements, eliminating need for external clamping circuits in automotive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL7833PbF	Same die, D2Pak (TO-263) package; R_θJC = 0.96 °C/W; 10% lower R_DS(on) at 10V but identical 4.5V performance	Surface-mount assembly only; unsuitable for through-hole designs or manual prototyping	Select when automated SMT production and minimal thermal resistance are prioritized over mechanical serviceability
IRL7833L	TO-262 (I²PAK) package; R_θJC = 0.96 °C/W; same electrical specs but different leadframe geometry and mounting hole pattern	Requires different heatsink clip; not interchangeable in existing TO-220AB footprints	Choose for higher-volume production where TO-262 tooling is already deployed and thermal margin is critical

Compared with IRL7833PbF and IRL7833L, the IRL7833S offers mechanical compatibility with legacy TO-220AB sockets and service-friendly through-hole mounting while delivering identical electrical performance - making it optimal for field-replaceable VRM modules and industrial repair scenarios.

Availability

IRL7833S is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRL7833S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRL7833S belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where low-voltage gate drive and thermal robustness are essential.

FAQ

Is IRL7833S suitable for 3.3V gate drive applications?

No. The IRL7833S is specified for guaranteed enhancement at V_GS ≥ 4.5V, with typical R_DS(on) of 3.1 mΩ at that voltage. At 3.3V, R_DS(on) rises sharply above 10 mΩ, causing excessive conduction loss. It is not recommended for true 3.3V logic-level drive without gate boosting or level-shifting circuitry.

What is the maximum continuous drain current at 100°C case temperature?

The IRL7833S supports 110 A continuous drain current at T_C = 100°C per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_θJC = 1.04 °C/W and junction temperature ceiling of 175°C, assuming proper heatsinking and ambient conditions.

Does IRL7833S have integrated ESD protection on the gate?

No. The IRL7833S does not include on-die ESD protection structures. Gate oxide is rated for ±20V absolute maximum V_GS; therefore, external gate resistors (≥10 Ω) and TVS diodes are required in production designs to prevent electrostatic damage during handling and PCB assembly.

Can IRL7833S replace IRL7833LPbF in an existing TO-262 footprint?

No. The IRL7833S uses TO-220AB packaging with 2.54 mm lead pitch and vertical mounting orientation, whereas the IRL7833LPbF uses TO-262 (I²PAK) with 5.08 mm pitch and horizontal leads. Mechanical incompatibility prevents direct substitution without PCB redesign and rework.

IRL7833S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4170 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL7833S FAQ

1.How can I place an order for IRL7833S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL7833S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL7833S reliable?

The price and inventory of IRL7833S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL7833S is usually 5 days.

3.What payment methods are accepted for IRL7833S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL7833S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL7833S?

IRL7833S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL7833S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL7833S?

For technical support, including IRL7833S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL7833S requirements.

6.How does Aetrix verify that IRL7833S is sourced from the original manufacturer or authorized distributors?

All IRL7833S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL7833S meets industry standards.

7.What is the process for return or replacement of IRL7833S?

All IRL7833S units undergo pre-shipment inspection (PSI). If there is an issue with IRL7833S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL7833S part is unused and in its original packaging.

Return procedure for IRL7833S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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