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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL7833SPBF

Name: IRL7833SPBF
Brand: Infineon Technologies
SKU: IRL7833SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL7833SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL7833SPBF.pdf

Description:: MOSFET N-CH 30V 150A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL7833SPBF from Infineon Technologies is a 30V, 140A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency synchronous buck converters in CPU VRMs and telecom DC-DC modules. It delivers 3.1 mΩ R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and supports 600 A pulsed drain current with fully characterized avalanche capability.

For engineers reviewing the IRL7833SPBF datasheet, IRL7833SPBF pinout, IRL7833SPBF application in VRM/DC-DC, or IRL7833SPBF equivalent for low-R_DS(on) power switching, this page provides verified electrical parameters, thermal performance data, gate drive requirements, and real-world synchronous rectification use cases - all confirmed from Infineon's official datasheet revision 05/18/04.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with ultra-low gate impedance and tightly controlled threshold voltage (1.4–2.3 V), enabling robust operation under fast dV/dt switching conditions typical in multiphase CPU core supplies. Its 3.1 mΩ R_DS(on) at 10 V and 3.7 mΩ at 4.5 V ensures minimal conduction loss in high-current, low-voltage rails.

The device features fully specified unclamped inductive avalanche energy (560 mJ), reverse recovery charge (34–51 nC), and output charge (22 nC), making it suitable for hard-switched topologies where body diode commutation occurs. Thermal resistance R_θJC is 1.04 °C/W, supporting high-power density PCB-mount designs with direct heatsink attachment.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus and 5 V logic-level gate drive.
R_DS(on) max @ 10 V	3.8 mΩ - Confirmed worst-case on-resistance at 25°C; enables ≤1.5 W conduction loss at 60 A RMS.
Q_g	32 nC - Total gate charge determines driver strength requirement; supports <100 ns turn-on with 0.32 A peak gate current.
I_D @ T_C = 25°C	140 A - Continuous drain current rating at case temperature 25°C; defines maximum steady-state power delivery capacity.
E_AS	560 mJ - Single-pulse avalanche energy rating; validates safe operation during transient overvoltage events in synchronous rectifiers.
R_θJC	1.04 °C/W - Junction-to-case thermal resistance; enables precise heatsink sizing when mounted to flat greased surface.
Q_rr	34–51 nC - Reverse recovery charge of integrated body diode; directly impacts shoot-through risk and loss in high-frequency synchronous FETs.

Pinout & Package

IRL7833SPBF uses the D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.16 × 14.99 × 4.83 mm and requires solder reflow per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output path / heat sink interface	Electrically and thermally connected to large copper pad; must be soldered to PCB ground plane or external heatsink.
Source	Power return node / reference for gate drive	Low-inductance connection point for source sensing and gate driver return; critical for stable switching.
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (typically 2–10 Ω) to damp ringing and control dV/dt.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	3.7 mΩ - Enables direct logic-level drive from PWM controllers without level-shifting, reducing BOM count.
Fully characterized avalanche	560 mJ E_AS, 30 A I_AR - Guarantees ruggedness against inductive kickback in non-isolated buck converters.
Low Q_gd/Q_gs1 ratio	13 nC / 8.7 nC ≈ 1.49 - Minimizes C_dv/dt turn-on risk in high-dV/dt synchronous FET applications.
Optimized body diode	Q_rr = 34–51 nC, t_rr = 42–63 ns - Reduces recovery loss and cross-conduction in high-frequency synchronous rectification.

Applications

Server CPU Voltage Regulator

Telecom 48V-to-12V DC-DC

Use Scenario: Multiphase buck converter delivering up to 200 A at 1.0–1.8 V to dual-socket Xeon processors.

IC Role / Device Role / Timing Role: Synchronous FET in low-side position; switches at 300–600 kHz with 4.5–10 V gate drive.

Use Value: 3.1 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 5 mΩ devices, improving VR efficiency above 90% at full load.

Use Scenario: Isolated forward or active-clamp forward converter with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 200–500 kHz, replacing Schottky diodes.

Use Value: 32 nC Q_g and 22 nC Q_oss enable efficient high-frequency switching while minimizing gate drive loss and output capacitance-related turn-off loss.

Industrial PLC Power Supply

Automotive ADAS Domain Controller

Use Scenario: 24 V input industrial SMPS powering FPGA, memory, and I/O banks with tight transient response.

IC Role / Device Role / Timing Role: High-current primary-side switch in half-bridge configuration; rated for 100% duty cycle operation.

Use Value: 140 A continuous current rating and 1.04 °C/W R_θJC support compact heatsink design in convection-cooled enclosures.

Use Scenario: 12 V input buck converter supplying 3.3 V/5 V rails to radar SoCs and camera ISPs in autonomous driving systems.

IC Role / Device Role / Timing Role: Low-side synchronous FET in 1 MHz+ monolithic or discrete controller-based regulator.

Use Value: Specified -55°C to +175°C T_STG/T_J range and 150°C max operating junction temperature ensure reliability in under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL7833PbF	Same die, TO-220AB package; R_θJA = 62 °C/W (vs. 40 °C/W for D2PAK PCB mount)	Better suited for prototyping or low-volume through-hole assembly; lower thermal performance in high-power density layouts	Select when mechanical mounting constraints prohibit surface-mount or when manual heatsinking is preferred
IPB77N04S4-05	40 V V_DS, 5.0 mΩ R_DS(on) @ 10 V, 77 A I_D; higher voltage margin but higher on-resistance	Preferred in 24 V industrial inputs where 30 V rating is marginal; less optimal for sub-2 V CPU rails	Choose when system input voltage exceeds 18 V or long-term availability of IRL7833SPBF is uncertain

Compared with IRL7833PbF, the IRL7833SPBF offers superior thermal performance in automated PCB assembly and higher current density; versus IPB77N04S4-05, it delivers lower conduction loss at 30 V systems but lacks voltage headroom for 24 V nominal inputs.

Availability

IRL7833SPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial PLC power supplies, and automotive ADAS domain controllers requiring stable component supply and long-lifecycle support.

Supply support for IRL7833SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRL7833SPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum recommended gate voltage for IRL7833SPBF?

The absolute maximum V_GS is ±20 V, but Infineon specifies reliable operation between 4.5 V and 10 V for optimal R_DS(on) and gate oxide reliability. Driving above 12 V increases gate leakage and accelerates wear-out; below 4.5 V results in incomplete enhancement and elevated R_DS(on) beyond 10 mΩ.

Does IRL7833SPBF have a built-in ESD protection diode?

No - the IRL7833SPBF does not integrate gate ESD protection. Its gate oxide is rated for human-body-model (HBM) ESD up to 1 kV per JEDEC JESD22-A114, requiring external handling precautions and gate series resistors (≥10 Ω) during layout to suppress transient coupling.

Can IRL7833SPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig 4) enables stable current sharing. Parallel operation requires matched gate drive loop inductance, symmetrical PCB layout, and individual gate resistors (≤5 Ω) to prevent oscillation; derating total current by 15% is recommended for thermal margin.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode is fully characterized with t_rr = 42–63 ns and Q_rr = 34–51 nC at I_S = 30 A, TJ = 25°C. These values are validated for synchronous rectifier use in hard-switched topologies up to 500 kHz, provided gate timing avoids overlap and snubbing is applied if dI/dt exceeds 100 A/µs.

IRL7833SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4170 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL7833SPBF FAQ

1.How can I place an order for IRL7833SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL7833SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL7833SPBF reliable?

The price and inventory of IRL7833SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL7833SPBF is usually 5 days.

3.What payment methods are accepted for IRL7833SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL7833SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL7833SPBF?

IRL7833SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL7833SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL7833SPBF?

For technical support, including IRL7833SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL7833SPBF requirements.

6.How does Aetrix verify that IRL7833SPBF is sourced from the original manufacturer or authorized distributors?

All IRL7833SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL7833SPBF meets industry standards.

7.What is the process for return or replacement of IRL7833SPBF?

All IRL7833SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL7833SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL7833SPBF part is unused and in its original packaging.

Return procedure for IRL7833SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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