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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL7833STRLPBF

Name: IRL7833STRLPBF
Brand: Infineon Technologies
SKU: IRL7833STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL7833STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL7833STRLPBF.pdf

Description:: MOSFET N-CH 30V 150A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL7833STRLPBF from Infineon Technologies is a 30V, 140A N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency synchronous buck converters in CPU VRMs and telecom DC-DC supplies. It delivers 3.8 mΩ R_DS(on) at V_GS = 4.5V, 32 nC total gate charge, and 1.04°C/W junction-to-case thermal resistance.

For engineers reviewing the IRL7833STRLPBF datasheet, IRL7833STRLPBF pinout, IRL7833STRLPBF application, or IRL7833STRLPBF equivalent, key selection criteria include low-voltage gate drive capability (4.5V logic-level), avalanche-rated ruggedness (560 mJ E_AS), body diode reverse recovery performance (Q_rr = 34–51 nC), and thermal management under high-current pulsed loads.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and temperature-stable threshold voltage (−11 mV/°C coefficient). Its ultra-low gate impedance and optimized charge distribution (Q_gd/Q_gs1 ratio minimized to suppress C_dv/dt turn-on) enable reliable operation in hard-switched synchronous rectification topologies.

The device integrates a robust intrinsic body diode with 1.2 V forward drop at 30 A and 42–63 ns reverse recovery time-critical for minimizing shoot-through risk and conduction loss in high-dV/dt node applications such as multiphase CPU power stages and isolated flyback secondary-side switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in telecom and server power.
R_DS(on) max @ 4.5 V	3.8 mΩ - Enables <1 W conduction loss at 140 A RMS in high-current VRM phases without forced air cooling.
Q_g	32 nC - Low gate charge reduces driver power demand and enables efficient 500 kHz–1 MHz switching in synchronous buck controllers.
E_AS	560 mJ - Single-pulse avalanche energy rating ensures survivability during load dump or inductive fault events without derating.
Q_rr	34–51 nC - Quantified reverse recovery charge directly impacts cross-conduction loss and thermal stress in synchronous FETs.
R_θJC	1.04 °C/W - Junction-to-case thermal resistance supports >100 W continuous dissipation with standard heatsink interface (0.5 °C/W case-to-sink).
I_D @ T_C = 100°C	110 A - Continuous current rating at elevated case temperature confirms suitability for compact, thermally constrained PCB layouts.

Pinout & Package

IRL7833STRLPBF uses the surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current source-drain paths and low-inductance gate routing.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2	Drain (D)	Electrically and thermally connected to exposed copper pad; must be soldered to large PCB copper area or heatsink for thermal integrity.
Pin 1	Source (S)	Common return path for load current; ties to power ground plane; forms cathode of integrated body diode.
Pin 3	Gate (G)	Control terminal requiring <32 nC charge to fully enhance; sensitive to ESD and dV/dt coupling; routed away from switching nodes.

Key Features

Feature	Design Value
Logic-level gate drive	Specified R_DS(on) ≤ 3.8 mΩ at V_GS = 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V controller designs.
Fully characterized UIS	560 mJ single-pulse avalanche energy - enables robust operation without external snubbers in hard-switched topologies.
Low Q_gd/Q_gs1 ratio	Q_gd = 13 nC, Q_gs1 = 8.7 nC - minimizes Miller-induced false turn-on in high-dV/dt synchronous rectifier positions.
Optimized body diode	Q_rr = 34–51 nC, t_rr = 42–63 ns - reduces reverse recovery loss and EMI generation compared to standard MOSFETs in freewheeling paths.
Lead-free packaging	D2PAK (TO-263) with matte tin-plated leads - compliant with RoHS and JEDEC J-STD-020 reflow profiles for automated assembly.

Applications

Server CPU Voltage Regulator

Telecom Isolated DC-DC Converter

Use Scenario: Multiphase buck converter supplying 0.8–1.8 V @ up to 200 A to modern x86 processors in data center servers.

IC Role / Device Role / Timing Role: Synchronous FET (low-side switch) operating at 500 kHz–1 MHz with 4.5 V gate drive from digital PWM controller.

Use Value: 3.8 mΩ R_DS(on) at 4.5 V enables >92% efficiency at full load while maintaining <60°C junction rise with 2 oz copper thermal pads.

Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output isolated forward or LLC converter for 5G base station power modules.

IC Role / Device Role / Timing Role: High-current, low-V_DS rectifying switch replacing Schottky diodes in transformer secondary winding.

Use Value: 140 A continuous rating and 1.2 V body diode drop reduce conduction loss by 40% vs. 40 V Schottky, improving system efficiency by 1.2% at 100 A output.

Industrial PLC Power Supply

Automotive ADAS Domain Controller

Use Scenario: 24 V input, 5 V/3.3 V dual-output non-isolated buck converter powering I/O modules and communication interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary power switch handling 15 A continuous load with transient peaks to 60 A during solenoid actuation.

Use Value: 560 mJ E_AS withstands inductive kickback from relay coils without failure, eliminating need for TVS clamping on each channel.

Use Scenario: Core power stage in 12 V input, 1.0 V/30 A processor supply for automotive vision processing units (VPUs) in advanced driver assistance systems.

IC Role / Device Role / Timing Role: High-efficiency, AEC-Q101 qualified (via package qualification) power FET in compact 6-layer PCB layout with strict thermal constraints.

Use Value: 1.04°C/W R_θJC allows junction temperature to remain <125°C at 30 A with 15 cm² heatsink, meeting ASIL-B thermal safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL7833PbF (TO-220AB)	Same die, but TO-220AB through-hole package with higher R_θJA (62°C/W) and no exposed drain pad.	Limited to lower-power or prototyping use where manual assembly and natural convection cooling suffice.	Select when board space permits through-hole mounting and thermal budget allows >2× junction temperature rise vs. D2PAK.
IRF7833PbF (TO-262)	Same die, TO-262 variant with internal leadframe design offering R_θJC = 1.04°C/W but no thermal pad-requires mechanical screw-down heatsinking.	Suitable for industrial motor drives where vibration resistance and field-serviceable heatsinks are required.	Choose when mechanical robustness and serviceability outweigh PCB assembly automation benefits of D2PAK.

Compared with IRL7833PbF and IRF7833PbF, the IRL7833STRLPBF offers identical electrical performance in a surface-mount D2PAK package optimized for automated reflow, minimal thermal resistance via PCB copper, and high-density power stage layouts-making it the preferred choice for volume production of high-efficiency computing and telecom power supplies.

Availability

IRL7833STRLPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRL7833STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRL7833 series belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRL7833STRLPBF at 100°C case temperature?

The maximum continuous drain current is 110 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes adequate PCB copper area for heat spreading and accounts for R_DS(on) increase with temperature per Figure 4.

Does IRL7833STRLPBF have avalanche capability, and how is it rated?

Yes-it is fully characterized for unclamped inductive switching with a single-pulse avalanche energy rating of 560 mJ at T_J = 25°C. This is measured under standardized UIS test conditions (Figure 12a–c) and reflects its ability to absorb inductive energy without failure during transient overcurrent events.

Can IRL7833STRLPBF be driven directly by a 3.3 V microcontroller GPIO?

No-while it is a logic-level MOSFET, its R_DS(on) is not guaranteed below V_GS = 4.5 V. At 3.3 V, R_DS(on) rises significantly (typical >10 mΩ), increasing conduction loss. A dedicated gate driver or level-shifter is required for reliable enhancement at 3.3 V.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 1.2 V at 30 A and Q_rr = 34–51 nC-higher forward drop than Schottky diodes but lower reverse recovery charge than many FRDs. In high-frequency synchronous rectification, its controlled Q_rr and tight parameter distribution provide more predictable timing and reduced EMI versus discrete diodes.

IRL7833STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4170 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL7833STRLPBF FAQ

1.How can I place an order for IRL7833STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL7833STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL7833STRLPBF reliable?

The price and inventory of IRL7833STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL7833STRLPBF is usually 5 days.

3.What payment methods are accepted for IRL7833STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL7833STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL7833STRLPBF?

IRL7833STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL7833STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL7833STRLPBF?

For technical support, including IRL7833STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL7833STRLPBF requirements.

6.How does Aetrix verify that IRL7833STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL7833STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL7833STRLPBF meets industry standards.

7.What is the process for return or replacement of IRL7833STRLPBF?

All IRL7833STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL7833STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL7833STRLPBF part is unused and in its original packaging.

Return procedure for IRL7833STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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