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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL7833STRRPBF

Name: IRL7833STRRPBF
Brand: Infineon Technologies
SKU: IRL7833STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL7833STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL7833STRRPBF.pdf

Description:: MOSFET N-CH 30V 150A D2PAK

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Product details

Overview

IRL7833STRRPBF from Infineon Technologies is a 30V, 140A N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency synchronous buck converters. It delivers 3.1 mΩ R_DS(on) at V_GS = 4.5V, 32 nC total gate charge, and 1.04°C/W junction-to-case thermal resistance - enabling efficient low-voltage CPU/GPU core power delivery in server and desktop motherboards.

For engineers reviewing the IRL7833STRRPBF datasheet, IRL7833STRRPBF pinout, IRL7833STRRPBF application, or IRL7833STRRPBF equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5V drive, fully characterized avalanche capability (560 mJ), body diode reverse recovery performance (Q_rr = 34–51 nC), and thermal robustness up to T_J = 175°C.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to minimize conduction and switching losses simultaneously. Its gate threshold voltage (1.4–2.3 V) and negative temperature coefficient of V_GS(th) (−11 mV/°C) support stable parallel operation and predictable turn-on behavior across temperature.

The device integrates a fast, low-Q_rr body diode with t_rr = 42–63 ns and V_SD ≤ 1.2 V, enabling reliable synchronous rectification without external Schottky supplementation. Its C_iss/C_oss/C_rss values (4170 pF / 950 pF / 470 pF at V_DS = 15 V) are calibrated for ZVS/ZCS soft-switching topologies in telecom DC-DC modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12 V input rails with margin for transient spikes in point-of-load converters
R_DS(on) max @ 4.5 V	3.8 mΩ - enables <1.5 W conduction loss at 60 A RMS in 48 V→1 V VRMs
Q_g	32 nC - reduces gate drive power and allows use with low-current PWM controllers (e.g., ISL63xx)
I_D @ T_C = 25°C	140 A - sustains peak load currents in multi-phase CPU power stages without derating
R_θJC	1.04 °C/W - permits direct heatsink mounting for >100 W dissipation with <110°C junction rise
E_AS	560 mJ - withstands unclamped inductive energy during hard-switching faults in server VRMs
Q_rr	34–51 nC - limits cross-conduction loss and EMI in synchronous rectifier mode

Pinout & Package

D2PAK (TO-263) package: surface-mount, isolated tab, 3-pin configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 2.7–20 V logic-level drive; low input capacitance enables fast edge rates
Pin 2 (D)	Drain	Main current path output; electrically tied to exposed copper tab; requires PCB thermal relief for soldering
Pin 3 (S)	Source	Reference node for gate drive; connects to power ground plane; carries full load current in low-side switch position

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	3.1 mΩ typ. - eliminates need for gate boosters in 5 V logic-driven VRMs
Fully characterized avalanche rating	560 mJ single-pulse - enables robust operation under inductor saturation or control loop failure
Low Q_gd/Q_gs1 ratio	13 nC / 8.7 nC ≈ 1.49 - suppresses C_dv/dt induced turn-on in high-dV/dt synchronous FET positions
Enhanced body diode recovery	t_rr = 42 ns typ. - reduces shoot-through risk and improves efficiency over standard MOSFETs in 1 MHz+ converters

Applications

Server CPU Core VRM

Telecom Isolated DC-DC

Use Scenario: High-current, multi-phase 48 V→0.8 V conversion powering AMD EPYC or Intel Xeon processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck stage; switched at 500 kHz–1 MHz.

Use Value: 3.1 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 5 mΩ devices, directly improving VRM efficiency at 100 A loads.

Use Scenario: Secondary-side synchronous rectification in 48 V input telecom PSUs (e.g., -48 V→12 V).

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes in forward or LLC resonant converters.

Use Value: Q_rr = 34 nC and t_rr = 42 ns reduce reverse recovery loss and EMI, enabling >95% full-load efficiency.

Desktop GPU Power Stage

Industrial PLC I/O Module

Use Scenario: 12 V→0.9 V point-of-load regulation for NVIDIA RTX-class graphics processing units.

IC Role / Device Role / Timing Role: High-current phase-leg switch in 6–12 phase controller IC designs.

Use Value: 140 A continuous rating and 1.04°C/W R_θJC allow compact thermal design without forced airflow.

Use Scenario: Solid-state relay replacement in programmable logic controller digital output cards.

IC Role / Device Role / Timing Role: Load switch controlling 24 V DC solenoids or indicator LEDs with PWM dimming.

Use Value: 30 V V_DS rating and −55°C to +175°C T_STG ensure reliability in harsh factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 5.5 mΩ @ 4.5 V; Q_g = 22 nC; TO-220AB package	Lower current rating (110 A); higher R_DS(on) increases conduction loss in >60 A phases	Preferred where cost sensitivity outweighs efficiency targets and through-hole assembly is required
SI7850DP-T1-GE3	R_DS(on) = 2.9 mΩ @ 4.5 V; Q_g = 43 nC; PowerPAK SO-8 package	Higher gate charge increases driver loss; smaller package limits thermal headroom above 80 A	Selected when board space is constrained and thermal management uses copper pour rather than heatsinks

Compared with IRL7833STRRPBF, IRL3803PbF trades efficiency for lower gate drive demand and legacy packaging, while SI7850DP-T1-GE3 offers marginally lower R_DS(on) but sacrifices thermal robustness and requires more aggressive gate drive sourcing.

Availability

IRL7833STRRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, desktop GPU power stages, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for IRL7833STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRL7833STRRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.

FAQ

Is IRL7833STRRPBF suitable for 3.3 V gate drive?

No. The device has a gate threshold voltage range of 1.4–2.3 V, but its R_DS(on) is only guaranteed at V_GS ≥ 4.5 V per datasheet specifications. At 3.3 V, R_DS(on) rises sharply (>10 mΩ), increasing conduction loss beyond acceptable levels in high-current applications.

What is the maximum recommended PCB copper area for thermal relief on the D2PAK drain pad?

Infineon recommends a minimum 400 mm² (20 mm × 20 mm) of 2 oz copper connected to the drain pad via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). This achieves ~1.2°C/W effective R_θJA in 4-layer boards, keeping T_J < 125°C at 100 A continuous.

Does IRL7833STRRPBF have integrated ESD protection on the gate?

Yes. The device incorporates gate oxide ESD protection rated to ±2000 V HBM per JEDEC JESD22-A114. However, this does not replace proper handling precautions - gate terminals must be shorted during PCB handling and assembly to prevent latent damage from static discharge.

Can IRL7833STRRPBF replace IRL7833PbF in existing designs?

Yes, IRL7833STRRPBF is a direct drop-in replacement for IRL7833PbF. Both share identical electrical specs, thermal ratings, pinout, and D2PAK package dimensions. The "STRR" suffix denotes tape-and-reel packaging with RoHS-compliant lead-free finish, fully compatible with reflow soldering profiles used for the PbF variant.

IRL7833STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4170 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL7833STRRPBF FAQ

1.How can I place an order for IRL7833STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL7833STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL7833STRRPBF reliable?

The price and inventory of IRL7833STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL7833STRRPBF is usually 5 days.

3.What payment methods are accepted for IRL7833STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL7833STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL7833STRRPBF?

IRL7833STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL7833STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL7833STRRPBF?

For technical support, including IRL7833STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL7833STRRPBF requirements.

6.How does Aetrix verify that IRL7833STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRL7833STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL7833STRRPBF meets industry standards.

7.What is the process for return or replacement of IRL7833STRRPBF?

All IRL7833STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL7833STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL7833STRRPBF part is unused and in its original packaging.

Return procedure for IRL7833STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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