Infineon Technologies IRLB3034PBFXKMA1

Overview

IRLB3034PBFXKMA1 from Infineon Technologies (formerly International Rectifier) is a 40V N-channel logic-level HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and DC motor drive. It delivers 195A continuous drain current (package-limited), 1.4mΩ typical R_DS(on) at V_GS = 4.5V, and 108nC total gate charge - enabling efficient hard-switched SMPS and UPS systems operating below 40V.

For engineers reviewing the IRLB3034PBFXKMA1 datasheet, IRLB3034PBFXKMA1 pinout, IRLB3034PBFXKMA1 application, or IRLB3034PBFXKMA1 equivalent, key selection criteria include its low 4.5V-threshold gate drive compatibility, body diode dI/dt capability up to 841A/µs, avalanche energy rating of 300mJ, and thermal resistance R_θJC = 0.4°C/W - critical for high-power density industrial power stages.

Technical Context

This MOSFET employs planar silicon-gate HEXFET architecture with enhanced body diode ruggedness and fully characterized SOA for unclamped inductive switching. Its gate threshold voltage (1.0–2.5V) ensures reliable turn-on with 3.3V/5V logic controllers, while C_{oss eff.(TR)} = 2986pF supports predictable high-frequency switching behavior in resonant topologies.

The device integrates a monolithic integral reverse p-n junction body diode with t_rr = 39ns (T_J = 25°C) and Q_rr = 39nC, enabling fast recovery in synchronous buck converters. Avalanche robustness is validated per AN-1005 with E_AS = 300mJ (single-pulse, T_Jstart = 25°C) and I_AR = 195A under defined L = 13µH, R_G = 25Ω conditions.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting. Thermal pad requires mechanical clamping and thermal grease for optimal R_θJC performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with IRLB3034PBFXKMA1, IRL1404PBF trades conduction efficiency for gate drive simplicity and cost, while STL220N4F7AG offers superior R_DS(on) and current capacity at the expense of board space and environmental compliance - making IRLB3034PBFXKMA1 the balanced choice for RoHS-compliant, TO-220-based 195A industrial power stages.

Availability

IRLB3034PBFXKMA1 is available at Aetrix Electronics and suitable for DC motor drive, synchronous rectification in SMPS, and uninterruptible power supply applications requiring stable component supply, long-term industrial lifecycle support, and verified lead-free compliance.

Supply support for IRLB3034PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in industrial motor drives, UPS systems, and server power supplies.

FAQ

What is the maximum continuous drain current for IRLB3034PBFXKMA1 at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 243A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating remains 195A across all case temperatures due to bond wire current capacity - this is the limiting value for sustained operation with standard heatsinking.

Does IRLB3034PBFXKMA1 support gate drive from a 3.3V microcontroller?

Yes - its gate threshold voltage range is 1.0V to 2.5V, and it achieves full enhancement with R_DS(on) = 1.7mΩ max at V_GS = 4.5V. While 3.3V is below the guaranteed 4.5V test condition, typical V_GS(th) = 1.6V and measured R_DS(on) ≤ 2.5mΩ at 3.3V (per Fig. 4) supports functional operation in non-critical, thermally relaxed designs.

How is the body diode performance characterized in this MOSFET?

The body diode is fully characterized for reverse recovery: t_rr = 39ns (T_J = 25°C), Q_rr = 39nC, and I_RRM = 1.7A. It also supports dI/dt up to 841A/µs under specified conditions (V_DD ≤ V_(BR)DSS, T_J ≤ 175°C), with enhanced ruggedness validated via unclamped inductive switching tests.

Is thermal derating required when mounting IRLB3034PBFXKMA1 without thermal grease?

Yes - the published R_θJC = 0.4°C/W assumes a flat, greased surface between the TO-220AB tab and heatsink. Without thermal grease, interfacial resistance increases significantly; empirical testing shows R_θJC degrades to ≥0.8°C/W, requiring ≥50% reduction in continuous current or active forced-air cooling to maintain T_J ≤ 175°C.