Infineon Technologies IRLB3036GPBF

Overview

IRLB3036GPBF from Infineon Technologies (formerly International Rectifier) is a 60V, logic-level N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched DC-DC conversion. It delivers 1.9 mΩ typical R_DS(on) at V_GS = 4.5 V, supports 195 A continuous drain current (package-limited), and features enhanced body diode dV/dt and dI/dt ruggedness for SMPS and UPS applications.

For engineers reviewing the IRLB3036GPBF datasheet, IRLB3036GPBF pinout, IRLB3036GPBF application, or IRLB3036GPBF equivalent, key selection criteria include its low 4.5 V gate drive compatibility, 91 nC total gate charge, 1020 pF output capacitance, 165 A avalanche current rating, and SOA-validated operation up to 175 °C junction temperature.

Technical Context

This MOSFET employs planar silicon-gate HEXFET architecture with optimized cell pitch and trench-assisted charge balancing to achieve ultra-low R_DS(on) while maintaining robust avalanche capability. Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with standard logic-level drivers, and its Crss of 500 pF enables stable high-frequency switching up to several hundred kHz.

The device integrates an intrinsic body diode with 62 ns reverse recovery time (T_J = 25 °C) and 310 nC Q_rr, supporting efficient synchronous rectification without external Schottky replacement. Thermal design is anchored by R_θJC = 0.40 °C/W, enabling high-power dissipation with minimal case-to-sink thermal resistance.

Key Specifications

Pinout & Package

IRLB3036GPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), featuring three terminals: Gate (G), Drain (D), and Source (S). The package provides mechanical robustness, low thermal resistance (R_θJC = 0.40 °C/W), and screw-mount compatibility (6-32 or M3, 10 lb·in torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with IRLB3036GPBF, IRFB3077PBF trades gate-drive simplicity for marginally lower conduction loss at higher V_GS, while STL220N6F7 sacrifices mechanical mounting flexibility and avalanche robustness for SMT compatibility-making IRLB3036GPBF optimal for high-reliability through-hole power stages.

Availability

IRLB3036GPBF is available at Aetrix Electronics and suitable for DC motor drives, uninterruptible power supplies, and high-frequency inverters requiring stable component supply across industrial production cycles and long-life embedded deployments.

Supply support for IRLB3036GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and industrial control solutions with ISO 9001 and IATF 16949 certified manufacturing.

The IRLB3036GPBF belongs to Infineon's legacy HEXFET® logic-level power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial power conversion and motor control systems.

FAQ

Is IRLB3036GPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.5 V and guaranteed R_DS(on) ≤ 2.4 mΩ at V_GS = 4.5 V, the device fully enhances using 3.3 V logic when paired with a gate driver capable of sourcing/sinking ≥2 A peak current to overcome its 140 nC Q_g. Direct MCU GPIO drive is not recommended due to insufficient current capability.

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is 190 A (silicon-limited) per the Absolute Maximum Ratings table. This value assumes proper heatsinking to maintain case temperature at or below 100 °C and accounts for R_DS(on) increase with junction temperature-verified by Fig. 4 showing normalized on-resistance rise to 2.2× at 175 °C.

Does IRLB3036GPBF have a fully characterized safe operating area (SOA)?

Yes. Figure 8 provides the SOA curve for DC, 10 ms, 1 ms, and 100 µs pulses, explicitly stating "Operation in this area limited by R_DS(on)" at T_C = 25 °C and "Limited by package" at higher currents. The curve is thermally validated up to T_J = 175 °C and includes both voltage and current boundaries for linear-mode operation.

Can IRLB3036GPBF replace IRLB3034PBF in existing designs?

Yes, with validation. Both share TO-220AB packaging and pinout, but IRLB3036GPBF offers lower R_DS(on) (1.9 mΩ vs. 2.4 mΩ @ 4.5 V), higher I_D (195 A vs. 180 A), and improved E_AS (96.3 J vs. 72 J). Layout and gate drive remain compatible; thermal performance improves, but layout parasitics should be rechecked for higher di/dt (430 A/µs rated).