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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLB3036PBF

Name: IRLB3036PBF
Brand: Infineon Technologies
SKU: IRLB3036PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLB3036PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRLB3036PBF.pdf

Description:: MOSFET N-CH 60V 195A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLB3036PBF from Infineon Technologies is a logic-level N-channel HEXFET Power MOSFET in TO-220AB package, rated for 60V V_DS, 1.9 mΩ typical R_DS(on) at 4.5V V_GS, and 195A package-limited continuous drain current. It serves as a high-current, low-loss power switch in hard-switched DC-DC converters and synchronous rectifiers.

For engineers reviewing the IRLB3036PBF datasheet, IRLB3036PBF pinout, IRLB3036PBF application, or IRLB3036PBF equivalent, key selection criteria include its 4.5V gate drive compatibility, 1100 nC total gate charge, 1020 pF output capacitance, robust 1100 mJ single-pulse avalanche energy, and enhanced body diode dI/dt capability up to 430 A/µs.

Technical Context

This MOSFET employs planar silicon-gate technology optimized for logic-level gate drive (V_GS(th) = 1.0–2.5 V), enabling direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting. Its low R_DS(on) × Q_g product (≈2.1 µΩ·nC) supports high-frequency switching up to 500 kHz in SMPS topologies.

The device integrates an intrinsic fast-recovery body diode with t_rr = 62 ns (T_J = 25°C), Q_rr = 310 nC, and I_RRM = 4.4 A - validated for unclamped inductive switching and synchronous rectification in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and industrial 24–48 V input SMPS.
R_DS(on) typ.	1.9 mΩ @ 4.5 V V_GS - Enables <1.5 W conduction loss at 165 A, critical for high-efficiency synchronous rectification.
I_D (Package)	195 A @ T_C = 25°C - Defined by lead-frame thermal limits; requires heatsink mounting for sustained operation.
Q_g	91–140 nC - Gate drive energy demand dictates minimum gate driver peak current ≥3 A for ≤100 ns turn-on.
E_AS	1100 mJ - Single-pulse avalanche ruggedness supports reliable operation under inductive load transients and startup surges.
t_rr	62 ns - Fast body diode recovery minimizes commutation losses and prevents shoot-through in half-bridge configurations.
R_θJC	0.40 °C/W - Junction-to-case thermal resistance enables 195 A operation with case temperature ≤100°C using standard TO-220 heatsinks.

Pinout & Package

IRLB3036PBF uses a 3-pin TO-220AB package with tab-connected Drain. The plastic body provides electrical isolation between tab and leads; mounting screw must be insulated unless Drain is referenced to heatsink potential.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Left)	Source	Main current return path; connects to ground or low-side reference; bonded to internal source metallization.
Lead 2 (Center)	Gate	Control terminal; requires <2.5 V threshold for turn-on; sensitive to ESD; routed with low-inductance trace.
Lead 3 (Right)	Drain	High-current power input/output; electrically connected to metal tab; must be isolated from heatsink unless system common.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 4.5 V V_GS, eliminating need for gate driver ICs in 5 V MCU-controlled motor drives.
Ultra-low R_DS(on) × Q_g	2.1 µΩ·nC - Balances switching loss and conduction loss for optimal efficiency in 100–500 kHz hard-switched converters.
Enhanced body diode dI/dt rating	430 A/µs - Supports reliable reverse recovery in high-di/dt synchronous rectifier applications without snubbers.
Full avalanche characterization	1100 mJ E_AS and 165 A I_AR - Validated for unclamped inductive switching; no derating required in properly designed circuits.
Lead-free TO-220AB	RoHS-compliant packaging with tin-plated leads; compatible with standard wave-soldering profiles (≤300°C, 10 s).

Applications

DC Motor Drive

High-Efficiency Synchronous Rectification

Use Scenario: Brushed DC motor control in industrial automation with 24–48 V supply and 100–200 A peak current.

IC Role / Device Role / Timing Role: Low-side power switch in H-bridge configuration; handles bidirectional current with fast turn-off (<110 ns td(off)) to prevent shoot-through.

Use Value: 1.9 mΩ R_DS(on) reduces I²R loss by >40% vs. legacy 5 mΩ MOSFETs, enabling 98.2% efficiency at 150 A.

Use Scenario: Secondary-side synchronous rectifier in 48 V input telecom DC-DC brick operating at 300 kHz.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode; body diode conducts during dead time; MOSFET channel conducts during main on-time.

Use Value: 62 ns t_rr and 310 nC Q_rr minimize reverse recovery loss; combined with low R_DS(on), improves full-load efficiency by 1.8% over 40 V Schottky.

Uninterruptible Power Supply (UPS)

Hard-Switched High-Frequency Inverters

Use Scenario: Bidirectional DC-link switch in online double-conversion UPS with 400 V DC bus and 10 kVA output.

IC Role / Device Role / Timing Role: High-current, low-loss switch in IGBT gate-drive auxiliary circuit and battery charging path.

Use Value: 1100 mJ E_AS withstands bus transients during grid failure; 195 A package rating supports 3× overload for 10 s without thermal shutdown.

Use Scenario: Full-bridge primary switch in 10 kW solar microinverter with SiC gate driver and 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main power switch handling 200 A peak drain current; gate driven by isolated 4 A peak driver to achieve <220 ns rise time.

Use Value: 91 nC Q_g enables <100 ns switching transitions; low C_oss (1020 pF) reduces capacitive turn-on loss at high dv/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 1.7 mΩ @ 4.5 V, 220 A package limit, but higher Q_g (150 nC) and no published avalanche energy rating.	Lacks documented E_AS validation; unsuitable for unclamped inductive loads without external clamping.	Prefer when maximum continuous current >200 A is required and avalanche stress is absent.
IXFH180N06T2	60 V, 2.0 mΩ @ 4.5 V, 180 A package limit, lower Q_g (75 nC), but TO-247 package increases PCB area and thermal interface complexity.	TO-247 footprint requires redesign; superior dv/dt immunity but higher gate drive loop inductance risk.	Choose for higher reliability in high-noise industrial environments where TO-220 creepage is marginal.

Compared with STL220N6F7 and IXFH180N06T2, IRLB3036PBF delivers the best balance of low gate charge, proven avalanche ruggedness, and TO-220AB manufacturability - making it optimal for cost-sensitive, high-current, high-reliability SMPS and motor drive designs.

Availability

IRLB3036PBF is available at Aetrix Electronics and suitable for DC motor drives, high-efficiency synchronous rectification in SMPS, and uninterruptible power supply systems requiring stable component supply across multi-year production cycles.

Supply support for IRLB3036PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IRLB3036PBF belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained industrial and computing power supplies.

FAQ

Is IRLB3036PBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.5 V and guaranteed enhancement at 4.5 V V_GS, the IRLB3036PBF achieves full conduction when driven by 3.3 V logic with sufficient gate current (≥1 A peak). However, R_DS(on) rises to ~2.8 mΩ at 3.3 V, so thermal design must account for +47% conduction loss versus 4.5 V operation.

What is the maximum safe continuous drain current at 100°C case temperature?

At T_C = 100°C, the continuous drain current is limited to 110 A per the SOA curve in Figure 9. This reflects thermal derating from the 195 A rating at 25°C, based on R_θJC = 0.40 °C/W and T_J(max) = 175°C. Exceeding this current risks junction overheating even with ideal heatsinking.

Does IRLB3036PBF have a fully characterized body diode for synchronous rectification?

Yes. The datasheet specifies t_rr = 62 ns, Q_rr = 310 nC, and I_RRM = 4.4 A at T_J = 25°C, with full characterization across temperature (up to 125°C) and di/dt (up to 430 A/µs). These parameters are measured per JEDEC standards and validated for synchronous rectifier use in hard-switched topologies.

Can IRLB3036PBF be mounted directly to a copper heatsink without insulation?

No. The metal tab is internally connected to the Drain terminal. Mounting without electrical isolation creates a short if the heatsink is grounded or referenced to any other potential. Use insulating pads (e.g., mica or ceramic) and shoulder washers with non-conductive screws, or verify system-level grounding architecture before direct-mount installation.

IRLB3036PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 165A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 11210 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 380W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRLB3036PBF FAQ

1.How can I place an order for IRLB3036PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLB3036PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLB3036PBF reliable?

The price and inventory of IRLB3036PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLB3036PBF is usually 5 days.

3.What payment methods are accepted for IRLB3036PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLB3036PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLB3036PBF?

IRLB3036PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLB3036PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLB3036PBF?

For technical support, including IRLB3036PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLB3036PBF requirements.

6.How does Aetrix verify that IRLB3036PBF is sourced from the original manufacturer or authorized distributors?

All IRLB3036PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLB3036PBF meets industry standards.

7.What is the process for return or replacement of IRLB3036PBF?

All IRLB3036PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLB3036PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLB3036PBF part is unused and in its original packaging.

Return procedure for IRLB3036PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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