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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLB3036PBFXKMA1

Name: IRLB3036PBFXKMA1
Brand: Infineon Technologies
SKU: IRLB3036PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLB3036PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRLB3036PBFXKMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLB3036PBFXKMA1 from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel HEXFET Power MOSFET in TO-220AB package, designed for high-current switching in DC motor drives and synchronous rectification. It delivers 195A continuous drain current (package-limited), 2.4mΩ max R_DS(on) at V_GS = 10V, and 60V V_DSS, operating reliably up to 175°C junction temperature.

For engineers reviewing the IRLB3036PBFXKMA1 datasheet, IRLB3036PBFXKMA1 pinout, IRLB3036PBFXKMA1 application, or IRLB3036PBFXKMA1 equivalent, key selection criteria include low 4.5V gate drive compatibility, 91nC total gate charge, avalanche ruggedness (1100mJ E_AS), body diode dI/dt capability (430A/µs), and thermal resistance R_θJC = 0.40°C/W.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry for ultra-low on-resistance and enhanced dynamic ruggedness. Its gate structure supports stable operation under hard-switching conditions with dV/dt immunity up to 2.5V/ns and fully characterized SOA across pulse widths from 10µs to DC.

The integrated body diode features fast reverse recovery (t_rr = 62ns at T_J = 25°C, I_F = 165A) and high dI/dt tolerance (≤430A/µs), enabling robust performance in synchronous buck converters and unidirectional H-bridge motor control without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage before avalanche onset; defines safe operation in 48V bus systems.
R_DS(on) max	2.4mΩ @ V_GS = 10V - Enables <1.2W conduction loss at 195A, critical for high-efficiency SMPS output stages.
I_D (pkg)	195A @ T_C = 25°C - Package-limited continuous current; requires heatsink with ≤0.5°C/W case-to-sink thermal resistance.
Q_g	91nC typ - Gate drive energy requirement determines driver strength needed for 100kHz+ switching in motor inverters.
E_AS	1100mJ - Single-pulse avalanche energy rating ensures survivability during inductive load turn-off transients.
R_θJC	0.40°C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for high-power density designs.
t_rr	62ns - Body diode reverse recovery time at T_J = 25°C; impacts switching losses and EMI in synchronous rectifiers.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting torque: 10 lb·in (1.1 N·m); soldering temperature limit: 300°C for 10 seconds at 1.6mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2	Drain (D)	Electrically connected to metal tab; primary high-current power path; must be electrically isolated from heatsink unless system ground reference permits.
Pin 1	Gate (G)	Control terminal; requires low-impedance drive (<2.1Ω series resistance recommended) to manage 91nC gate charge within target switching times.
Pin 3	Source (S)	Power return path; referenced to gate drive common; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5V (R_DS(on) ≤ 2.8mΩ), enabling direct interface with 3.3V/5V microcontrollers without level-shifting.
Enhanced body diode dI/dt	Rated for 430A/µs di/dt during reverse recovery, reducing risk of commutation failure in high-frequency synchronous rectifiers.
Optimized R×Q product	Superior figure-of-merit (R_DS(on) × Q_g) at 4.5V gate drive, balancing conduction and switching losses in 100–500kHz SMPS designs.
Avalanche-rated SOA	Full Safe Operating Area characterization up to 10ms pulses, supporting unclamped inductive switching in UPS and motor drive fault conditions.

Applications

DC Motor Drive

Synchronous Rectification

Use Scenario: High-power brushed DC motor control in industrial automation, using half-bridge topology with PWM at 20–100kHz.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 195A; body diode conducts freewheeling current during off-time.

Use Value: 2.4mΩ R_DS(on) minimizes I²R heating at stall current; 430A/µs dI/dt rating prevents diode snap-off during rapid current reversal.

Use Scenario: Secondary-side synchronous rectification in 48V-input telecom PSUs delivering >1kW output.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode in LLC resonant converter output stage, driven by gate signal synchronized to transformer voltage polarity.

Use Value: 62ns t_rr and low Q_rr (310nC) reduce switching losses and EMI vs. discrete diodes; 60V rating accommodates 48V bus + transient margin.

Uninterruptible Power Supply

Hard-Switched Inverters

Use Scenario: Bidirectional DC-AC inverter stage in line-interactive UPS, operating at 50/60Hz fundamental with high-frequency PWM modulation.

IC Role / Device Role / Timing Role: High-current switch in full-bridge output stage; subjected to repetitive unclamped inductive switching during battery backup mode transitions.

Use Value: 1100mJ E_AS and thermally validated SOA ensure reliable operation during load dump or short-circuit events without derating.

Use Scenario: Primary-side switching in hard-switched forward or push-pull converters for industrial power supplies (e.g., welding equipment).

IC Role / Device Role / Timing Role: Main power switch conducting high peak currents (>270A pulsed) with fast turn-on/off to minimize overlap losses.

Use Value: 91nC Q_g and 220ns rise time enable efficient 100kHz operation; 0.40°C/W R_θJC allows compact heatsinking in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB3077PBF	Higher V_DSS (75V), higher R_DS(on) (3.2mΩ max), same TO-220AB package and 4.5V logic drive.	Better suited for 60V bus systems requiring higher voltage margin; trade-off is ~33% higher conduction loss at same current.	Select when 60V design margin is insufficient and 75V rating justifies increased R_DS(on).
STP190NF20L	Same 60V rating, lower R_DS(on) (1.7mΩ typ), but higher Q_g (120nC) and no published E_AS rating.	Preferred for ultra-low-loss conduction-critical designs; unsuitable where unclamped inductive switching or avalanche stress is expected.	Choose only if avalanche robustness is not required and gate drive capability supports 120nC charge.

Compared with IRLB3036PBFXKMA1, IRFB3077PBF trades voltage headroom for conduction loss, while STP190NF20L improves R_DS(on) but sacrifices avalanche rating and increases gate drive demand-making IRLB3036PBFXKMA1 optimal for balanced high-current, high-ruggedness 48–60V applications.

Availability

IRLB3036PBFXKMA1 is available at Aetrix Electronics and suitable for DC motor drives, synchronous rectification in SMPS, and uninterruptible power supply designs requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRLB3036PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial power conversion and motor control systems.

FAQ

Is IRLB3036PBFXKMA1 compatible with 3.3V microcontroller GPIOs?

Yes-it is a logic-level MOSFET specified for full enhancement at V_GS = 4.5V, with R_DS(on) ≤ 2.8mΩ at that voltage. While 3.3V may yield higher on-resistance (~3.5–4.0mΩ estimated), it remains functional in low-duty-cycle or thermally relaxed applications. For guaranteed performance, use ≥4.5V drive.

What is the maximum recommended PCB copper area for thermal relief in TO-220AB mounting?

Per IR application note AN-994, a minimum 1"×1" (25.4mm×25.4mm) copper pour on FR-4 PCB with 2oz copper thickness is recommended. Thermal vias (≥8×0.3mm diameter) under the tab improve heat transfer to inner layers, reducing effective R_θJA from 62°C/W to ~35°C/W in typical layouts.

Does IRLB3036PBFXKMA1 support paralleling for higher current?

Yes-its positive temperature coefficient of R_DS(on) (see Fig 4) enables inherent current sharing. Parallel operation requires matched gate drive impedance (<1Ω difference), symmetrical layout, and individual source resistors (0.01Ω) for current sensing and stability. Derate total current by 15% for thermal margin.

Can the body diode be used for continuous freewheeling in bidirectional H-bridge topologies?

No-the body diode is rated for pulsed source current (I_SM = 1100A) and continuous source current (I_S = 270A), but its forward voltage (V_SD = 1.3V max) and reverse recovery characteristics make it unsuitable for sustained conduction. External Schottky or SiC diodes are recommended for continuous freewheeling paths.

IRLB3036PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 165A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 11210 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 380W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRLB3036PBFXKMA1 FAQ

1.How can I place an order for IRLB3036PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLB3036PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLB3036PBFXKMA1 reliable?

The price and inventory of IRLB3036PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLB3036PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRLB3036PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLB3036PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLB3036PBFXKMA1?

IRLB3036PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLB3036PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLB3036PBFXKMA1?

For technical support, including IRLB3036PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLB3036PBFXKMA1 requirements.

6.How does Aetrix verify that IRLB3036PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRLB3036PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLB3036PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRLB3036PBFXKMA1?

All IRLB3036PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRLB3036PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLB3036PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRLB3036PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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