Infineon Technologies IRLH5030TR2PBF

Overview

IRLH5030TR2PBF from Infineon Technologies is a 100 V, 88 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, featuring R_DS(on) ≤ 9.9 mΩ at V_GS = 4.5 V, 1.2 Ω gate resistance, and 44 nC total gate charge - optimized for high-efficiency secondary-side synchronous rectification and DC-DC brick converters.

For engineers reviewing the IRLH5030TR2PBF datasheet, IRLH5030TR2PBF pinout, IRLH5030TR2PBF application, or IRLH5030TR2PBF equivalent, key selection criteria include low-profile thermal performance (R_θJC-mb ≤ 0.8 °C/W), MSL1 industrial qualification, 100% R_G testing, and industry-standard pinout enabling multi-vendor board-level compatibility.

Technical Context

This MOSFET employs trench-gate silicon technology with an integrated body diode, supporting unclamped inductive switching and single-pulse avalanche energy up to 230 mJ at T_J = 25°C. Its low R_DS(on) and fast switching parameters (t_d(on) = 21 ns, t_f = 41 ns) enable high-frequency operation in hard-switched topologies.

The device operates with gate threshold voltage of 1.0–2.5 V and exhibits negative temperature coefficient for V_GS(th) (−5.9 mV/°C), ensuring current sharing stability in paralleled configurations. Thermal design leverages direct mounting base conduction path and low-profile 0.9 mm height for PCB-integrated heat dissipation.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed thermal pad on bottom side; 3-terminal configuration (Drain, Source, Gate) with industry-standard pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (top-side marking aligns with quadrant Q1 orientation per tape specification).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFH5010TR2PBF and SISD100DN-T1-GE3, the IRLH5030TR2PBF delivers optimal balance of conduction loss, gate drive simplicity, and layout compatibility - making it preferred for existing 300–500 kHz synchronous rectifier and DC-DC brick platforms.

Availability

IRLH5030TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRLH5030TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IRLH5030TR2PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-efficiency DC-DC conversion in telecom, industrial, and computing power systems where thermal density and reliability are critical.

FAQ

What is the maximum continuous drain current at 100°C mounting base temperature?

The IRLH5030TR2PBF supports 56 A continuous drain current at T_mb = 100°C per absolute maximum ratings table. This derating reflects thermal equilibrium with R_θJC-mb = 0.8 °C/W and 60°C ambient rise, validated under JEDEC JESD51-14 conditions with 1-in² 2-oz copper pad.

Does this MOSFET require a gate resistor for safe operation?

No external gate resistor is required in most applications due to its 1.2 Ω internal R_G, which damps ringing and limits peak gate current. However, a 2–5 Ω series resistor is recommended when driving from low-impedance controllers to suppress sub-nanosecond edge-induced EMI in high-noise environments.

Can the body diode be used for reverse recovery in synchronous rectification?

Yes - the body diode has t_rr = 32–48 ns and Q_rr = 190–285 nC at I_F = 50 A, enabling clean commutation in synchronous rectifiers up to 500 kHz. Layout must minimize source inductance (<1.5 nH) to prevent voltage overshoot during diode turn-off.

Is the PQFN 5×6 package compatible with standard reflow profiles?

Yes - the IRLH5030TR2PBF is qualified for MSL1 and supports IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C for ≤30 seconds. The exposed thermal pad requires ≥70% solder coverage and stencil aperture ratio ≥0.66 for reliable void-free attachment.