Infineon Technologies IRLH5034TR2PBF

Overview

IRLH5034TR2PBF from Infineon Technologies is a 40 V, 100 A N-channel HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-current synchronous rectification and DC-DC brick applications with R_DS(on) ≤ 3.2 mΩ at V_GS = 4.5 V, Q_g = 43 nC (typ), and R_θJC-mb ≤ 0.8 °C/W.

For engineers reviewing the IRLH5034TR2PBF datasheet, IRLH5034TR2PBF pinout, IRLH5034TR2PBF application, or IRLH5034TR2PBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V), ultra-low conduction loss, PCB thermal performance under high ambient, and industrial-grade MSL1 reliability for power conversion modules.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve enhanced switching efficiency and robust avalanche capability (E_AS = 1600 mJ at I_D = 50 A). Its low R_DS(on) and 1.2 Ω gate resistance support fast, controlled turn-on/turn-off in hard-switched topologies.

The device integrates a body diode with t_rr = 25–38 ns and Q_rr = 74–110 nC, enabling reliable operation in synchronous rectifier configurations where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

IRLH5034TR2PBF uses a 8-pin PQFN 5×6 mm Outline "B" package with exposed drain pad (pins 1–4: Source; pins 5–8: Gate; center thermal pad: Drain). Mounting base thermal path is optimized for PCB copper area contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with SiR872DP and NTMFS5C676N, IRLH5034TR2PBF offers the best balance of ultra-low R_DS(on) and moderate Q_g, making it ideal for 200–600 kHz synchronous rectifiers and DC-DC bricks where both conduction and switching losses must be minimized simultaneously.

Availability

IRLH5034TR2PBF is available at Aetrix Electronics and suitable for secondary side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRLH5034TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLH5034TR2PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, low-voltage DC-DC conversion and motor control applications demanding minimal conduction loss and robust thermal performance.

FAQ

What is the maximum continuous drain current at 100°C mounting base temperature?

At T_mb = 100°C, the maximum continuous drain current is derated to 40 A per the Safe Operating Area curve (Fig. 9), based on thermal limitation rather than electrical rating. This reflects 40% of the 25°C rating (100 A), consistent with R_θJC-mb = 0.8 °C/W and 32 W power dissipation limit.

Does IRLH5034TR2PBF support 3.3 V gate drive?

No - the gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, but R_DS(on) is not specified below V_GS = 4.5 V. At 3.3 V, typical R_DS(on) exceeds 10 mΩ (per Fig. 12), resulting in >100 W conduction loss at 100 A - unsuitable for continuous operation.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - the body diode exhibits t_rr = 25–38 ns and soft recovery characteristics (Q_rr/I_RRM ratio < 2.5 ns/A), verified in unclamped inductive test circuits (Fig. 16). It supports synchronous rectification up to 300 kHz without external snubbers in properly designed layouts.

What is the recommended minimum PCB copper area for the drain pad?

Infineon specifies ≥200 mm² of 2 oz copper connected to the exposed drain pad for achieving the rated R_θJC-mb ≤ 0.8 °C/W. For 100 A continuous operation, use ≥400 mm² with thermal vias (≥12 × 0.3 mm diameter) to inner ground planes to maintain T_J < 125°C at 50°C ambient.