Infineon Technologies IRLH5034TRPBF

Overview

IRLH5034TRPBF from Infineon Technologies is a 40 V, 100 A N-channel PQFN 5×6 mm power MOSFET optimized for high-current synchronous rectification and DC-DC conversion. It delivers 2.7 mΩ typical R_DS(on) at V_GS = 4.5 V, 43 nC typical Q_g, and 0.5 °C/W typical junction-to-mounting-base thermal resistance, enabling high-efficiency operation in compact, thermally constrained power stages.

For engineers reviewing the IRLH5034TRPBF datasheet, IRLH5034TRPBF pinout, IRLH5034TRPBF application, or IRLH5034TRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V), ultra-low conduction loss at high current, industry-standard PQFN pinout, and MSL1 industrial qualification for reliable surface-mount manufacturing.

Technical Context

This HEXFET device uses planar silicon process technology with integrated body diode and optimized charge distribution to achieve fast switching (t_r = 54 ns, t_f = 21 ns) and low reverse recovery charge (Q_rr = 74–110 nC). Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) ensures robust turn-on under low-voltage control logic.

The PQFN 5×6 mm package features exposed mounting base for direct PCB thermal coupling, delivering ≤0.8 °C/W max R_θJC-mb. The device supports unclamped inductive switching with 360 mJ single-pulse avalanche energy at I_AS = 50 A, confirming ruggedness in hard-switched topologies.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed mounting base (pin 1 identifier marked), RoHS-compliant, MSL1 rated. Thermal pad soldered directly to PCB copper for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLH5034TRPBF, IRFH5034TRPBF offers identical electrical performance with different packaging logistics, while SiR872DP-T1-GE3 trades 19% higher conduction loss and slower switching for broader supply chain access-making it viable only where full 100 A capability is not required.

Availability

IRLH5034TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-density DC-DC bricks, and BLDC motor inverters requiring stable component supply, long-term lifecycle support, and MSL1-compliant manufacturing readiness.

Supply support for IRLH5034TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in server, telecom, and industrial power supplies where low R_DS(on) and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRLH5034TRPBF at 100°C mounting base temperature?

At T_mb = 100°C, the continuous drain current is derated to 40 A per the absolute maximum ratings table. This reflects thermal limits of the PQFN package when mounted on standard 2 oz copper with 200 mm² thermal pad area, not ambient conditions. Derating follows linear rule: 0.029 W/°C above 25°C mounting base temperature.

Does IRLH5034TRPBF require a gate resistor for safe operation?

A gate resistor is recommended but not mandatory; the device has an internal 1.2 Ω gate resistance. External resistors (typically 2–10 Ω) are used to dampen ringing, control dV/dt, and limit peak gate current during fast switching. Values below 1 Ω may cause oscillation in high-di/dt layouts due to PCB inductance interacting with C_iss.

Can IRLH5034TRPBF be used in avalanche-mode operation?

Yes-it is fully specified for unclamped inductive switching with 360 mJ single-pulse avalanche energy at I_AS = 50 A and starting junction temperature of 25°C. Operation beyond this requires derating per Fig. 13; repeated avalanche stress is not recommended without thermal monitoring and pulse-width limitation.

Is the exposed thermal pad electrically connected to the drain?

Yes-the exposed mounting base is internally tied to the drain (D) terminal. It must be soldered to a PCB copper pour connected to the drain net. Floating or grounding the pad creates short-circuit risk and degrades thermal performance; minimum solder coverage is 90% per IPC-7351B guidelines.