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Infineon Technologies IRLH5036TR2PBF

Part No.:
IRLH5036TR2PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixIRLH5036TR2PBF.pdf
Description:
MOSFET N-CH 60V 100A 5X6 PQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,960

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Product details

Overview

IRLH5036TR2PBF from Infineon Technologies is a 60 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-current synchronous rectification and DC-DC brick applications with RDS(on) = 4.4 mΩ @ VGS = 4.5 V, Qg = 44 nC, and RθJ-mb = 0.8 °C/W.

For engineers reviewing the IRLH5036TR2PBF datasheet, IRLH5036TR2PBF pinout, IRLH5036TR2PBF application, or IRLH5036TR2PBF equivalent, key selection criteria include low-voltage gate drive compatibility (VGS(th) = 1.0–2.5 V), industry-standard pinout for multi-vendor PCB reuse, and MSL1 industrial qualification for high-reliability power conversion designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve sub-5 mΩ on-resistance at 4.5 V gate drive, enabling efficient operation in 12–48 V input DC-DC converters where gate bias is constrained by controller output voltage. Its low Qgd/Qg ratio (18/44 nC) supports fast, controllable switching with reduced Miller-induced shoot-through risk.

The device integrates a robust body diode with trr = 28–42 ns and Qrr = 134–201 nC, validated for unclamped inductive switching up to EAS = 286 mJ at TJ = 25°C. Thermal design leverages direct-mounting base (RθJ-mb ≤ 0.8 °C/W) for high-power density layouts without heatsinks.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Supports 48 V bus systems with 20 % safety margin against transients
RDS(on) max @ VGS = 4.5 V5.5 mΩ - Enables <1.4 W conduction loss at 50 A, critical for thermally constrained bricks
Qg typical44 nC - Matches standard PWM controllers (e.g., UCC27531) without gate driver oversizing
ID @ Tmb = 25°C100 A - Sustains full-load current in secondary-side rectifiers without derating
RθJ-mb max0.8 °C/W - Allows >90 W power dissipation with 72 °C temperature rise over mounting base
VGS(th)1.0–2.5 V - Ensures turn-on with 3.3 V or 5 V logic-level drivers, eliminating level shifters
trr28–42 ns - Minimizes reverse recovery losses in high-frequency synchronous rectification

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed thermal pad (pin 1 identifier marked), designed for solder-reflow mounting and direct thermal coupling to PCB copper planes. Package complies with MSL1 and RoHS.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main current path collectorInternally connected to exposed thermal pad; must be soldered to large copper pour for thermal management
Source (S)Current return node / referenceCommon source connection for gate drive loop; low-inductance layout essential for stability
Gate (G)Control terminalHigh-impedance input requiring <1.2 Ω series resistance to damp ringing during fast switching

Key Features

FeatureDesign Value
Low-profile PQFN packageHeight < 0.9 mm - Enables ultra-thin DC-DC modules meeting 1U server or telecom blade height constraints
100 % RG testedGate resistance verified per unit - Eliminates batch-level gate oscillation risk in parallel configurations
Industry-standard pinoutDrain-Source-Gate sequence matches IRF, ST, ON Semi equivalents - Enables drop-in replacement on existing footprints
Low RDS(on) @ 4.5 V4.4 mΩ typical - Reduces conduction loss by 35 % vs. legacy 10 V gate MOSFETs in 5 V-controlled systems
MSL1 qualificationMoisture sensitivity level 1 - Permits unlimited floor life and standard reflow without baking

Applications

Secondary-Side Synchronous RectifierDC-DC Brick Converter

Use Scenario: High-efficiency 48 V to 12 V isolated DC-DC converter in telecom power shelf with 500 kHz switching frequency.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: Achieves >95 % efficiency at 60 A load by reducing forward voltage drop from 0.5 V (Schottky) to <50 mV (MOSFET), cutting rectifier loss by 85 %.

Use Scenario: Compact 300 W quarter-brick module for industrial PLC power supply with forced-air cooling.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge topology operating at 200 kHz with 12 V gate drive.

Use Value: Delivers 100 A peak current capability while maintaining junction temperature <125°C under 70°C ambient, enabled by RθJ-mb = 0.5 °C/W.

Inverter for DC Motor DriveBoost Converter Stage

Use Scenario: 24 V battery-powered robotic joint actuator requiring bidirectional 40 A motor current with regenerative braking.

IC Role / Device Role / Timing Role: Half-bridge low-side switch controlling motor phase current; body diode conducts reverse energy during PWM off-time.

Use Value: Body diode trr = 28 ns minimizes voltage spikes during commutation, allowing 20 kHz PWM without snubbers and reducing EMI filter size.

Use Scenario: 12 V to 48 V boost converter in solar charge controller handling 25 A input current.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) topology with 100 kHz switching frequency.

Use Value: RDS(on) = 4.4 mΩ limits conduction loss to 2.75 W at 25 A, enabling >97 % efficiency without active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFH5020TR2PBFRDS(on) = 2.0 mΩ @ 10 V, but 6.0 mΩ @ 4.5 V; Qg = 52 nCHigher gate charge increases driver loss; better suited for 10 V gate drive systemsSelect when system uses 10 V gate drivers and requires lower RDS(on) at higher VGS
STL220N6F7AGRDS(on) = 3.8 mΩ @ 4.5 V; PQFN 5×6 but non-MSL1; no 100 % RG testLacks industrial moisture rating and gate resistance screening; higher risk in high-reliability productionAcceptable for cost-sensitive consumer designs where MSL1 and RG traceability are not required

Compared with IRLH5036TR2PBF, IRFH5020TR2PBF trades higher gate drive dependency for lower on-resistance at 10 V, while STL220N6F7AG offers marginally better RDS(on) but omits MSL1 qualification and gate resistance testing-critical for telecom and industrial deployments.

Availability

IRLH5036TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and high-current motor inverters requiring stable component supply, long-term lifecycle support, and MSL1-compliant manufacturing readiness.

Supply support for IRLH5036TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's TrenchStop™ and HEXFET® power MOSFET product line, engineered for high-efficiency, high-density power conversion in telecom, server, and industrial power supplies where low gate-threshold and thermal performance are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLH5036TR2PBF supports 40 A continuous drain current at Tmb = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 package and assumes proper PCB copper area (≥1000 mm²) and 2 oz copper thickness for mounting base thermal transfer.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. A 1.2 Ω series resistor is recommended based on the device's typical RG = 1.2 Ω and gate charge profile; values between 1.0 Ω and 2.2 Ω balance switching speed and EMI, especially in paralleled configurations.

Can the body diode be used for freewheeling in a buck converter?

Yes-the integrated body diode is rated for 100 A continuous source current and exhibits trr = 28–42 ns with Qrr = 134–201 nC. It is suitable for freewheeling in medium-frequency buck converters (<500 kHz), though synchronous rectification with external gate control yields lower losses.

Is the exposed thermal pad electrically connected to the drain?

Yes-the exposed thermal pad is internally tied to the drain (D) terminal. It must be soldered to a PCB copper plane designated as drain net and thermally coupled to system ground plane only through isolation if required; no floating or insulated mounting is permitted.

IRLH5036TR2PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
5360 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (5x6)

IRLH5036TR2PBF FAQ

1.How can I place an order for IRLH5036TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLH5036TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLH5036TR2PBF reliable?

The price and inventory of IRLH5036TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLH5036TR2PBF is usually 5 days.

3.What payment methods are accepted for IRLH5036TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLH5036TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLH5036TR2PBF?

IRLH5036TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLH5036TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLH5036TR2PBF?

For technical support, including IRLH5036TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLH5036TR2PBF requirements.

6.How does Aetrix verify that IRLH5036TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRLH5036TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLH5036TR2PBF meets industry standards.

7.What is the process for return or replacement of IRLH5036TR2PBF?

All IRLH5036TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLH5036TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLH5036TR2PBF part is unused and in its original packaging.

Return procedure for IRLH5036TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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