Infineon Technologies IRLH5036TRPBF

Overview

IRLH5036TRPBF from Infineon Technologies is a 60 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-efficiency synchronous rectification and DC-DC brick applications with R_DS(on) = 4.4 mΩ @ V_GS = 4.5 V, Q_g = 44 nC, and R_θJ-mb = 0.8 °C/W.

For engineers reviewing the IRLH5036TRPBF datasheet, IRLH5036TRPBF pinout, IRLH5036TRPBF application, or IRLH5036TRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (V_GS(th) = 1.0–2.5 V), industry-standard pinout for multi-vendor board reuse, and validated avalanche energy (E_AS = 286 mJ) for unclamped inductive switching reliability.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve sub-5 mΩ on-resistance at 4.5 V gate drive, enabling efficient operation in 12–48 V input DC-DC converters. Its PQFN 5×6 mm bottom-side thermal pad delivers <0.8 °C/W junction-to-mounting-base thermal resistance, supporting high-current conduction without external heatsinking.

The device integrates a robust body diode with t_rr = 28–42 ns and Q_rr = 134–201 nC, suitable for hard-switched synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI. Gate charge profile (Q_gd = 18 nC, Q_sw = 23 nC) supports fast, controllable turn-on/turn-off transitions under 1.2 Ω gate resistance.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed thermal pad on bottom side; 3-pin configuration (Drain, Source, Gate) with industry-standard pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (as marked per IR package drawing PN-97-1001).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFH5036TRPBF and SiR872DP-T1-GE3, IRLH5036TRPBF offers optimal balance of low gate charge (44 nC) and proven avalanche ruggedness (286 mJ), making it preferred for high-frequency, high-reliability DC-DC bricks where both switching speed and transient robustness are critical.

Availability

IRLH5036TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRLH5036TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and IATF 16949.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-efficiency DC-DC conversion in telecom, server, and industrial power supplies where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum continuous drain current at 100°C mounting base temperature?

The IRLH5036TRPBF supports 40 A continuous drain current when the mounting base temperature (T_mb) is held at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 package and must be validated using measured T_mb under actual PCB layout and airflow conditions.

Does this MOSFET require a negative gate voltage to ensure safe turn-off?

No. The device has a gate threshold voltage range of 1.0–2.5 V and is fully enhanced at 0 V gate-source bias; however, applying –5 V to –10 V improves noise immunity and ensures complete depletion during high-dv/dt switching. The gate oxide is rated for ±16 V, so negative bias is permissible but not mandatory.

Can the body diode be used for continuous freewheeling in a buck converter?

Yes - the integrated body diode is rated for 100 A continuous source current (I_S) at T_mb = 25°C and exhibits t_rr = 28–42 ns with Q_rr = 134–201 nC. For reliable operation, ensure diode conduction occurs only during controlled dead-time intervals and that peak reverse recovery current does not exceed 500 A.

Is the PQFN 5×6 package compatible with standard stencil thicknesses for lead-free reflow?

Yes - the PQFN 5×6 mm Outline "B" package uses a standard 0.3 mm stencil aperture with 0.15 mm land pattern extension beyond the thermal pad, as defined in Infineon Application Note AN-1136. Recommended solder paste volume ensures void-free thermal pad attachment without bridging to adjacent pins.