Infineon Technologies IRLH6224TR2PBF

Overview

IRLH6224TR2PBF from Infineon Technologies is a 20 V, 80 A N-channel HEXFET Power MOSFET in PQFN 5×6 mm package, featuring R_DS(on) of 2.3 mΩ @ V_GS = 10 V and 3.0 mΩ @ V_GS = 4.5 V, with 44 nC total gate charge and 2.4°C/W junction-to-case (bottom) thermal resistance. It serves as a high-current, low-voltage synchronous rectifier or battery protection switch in compact DC-DC converters.

For engineers reviewing the IRLH6224TR2PBF datasheet, IRLH6224TR2PBF pinout, IRLH6224TR2PBF application, or IRLH6224TR2PBF equivalent, key selection criteria include its 2.3 mΩ on-resistance at 10 V gate drive, 80 A continuous drain current at T_C(bottom) = 25°C, PQFN 5×6 mm footprint with exposed thermal pad, and industry-standard pinout for multi-vendor compatibility in high-density power stages.

Technical Context

This device uses a trench-gated N-channel silicon MOSFET structure optimized for low R_DS(on) and fast switching in 20 V systems. Its gate threshold voltage (0.5–1.1 V) enables robust operation with 2.5 V and 4.5 V logic-level drive, while the 44 nC Q_g supports efficient PWM control at frequencies up to several hundred kHz.

Thermal performance is defined by a 2.4°C/W R_θJC(bottom), enabling direct PCB copper thermal spreading, and a 35°C/W R_θJA under standard JEDEC conditions. The integrated body diode exhibits 1.2 V forward drop at 20 A and 38–57 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling.

Key Specifications

Pinout & Package

PQFN 5 mm × 6 mm, 8-lead, thermally enhanced package with exposed bottom thermal pad (pin 1 marked by quadrant identifier Q1 per tape reel spec). Industry-standard pinout supports drop-in replacement across multiple vendors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLH6224TR2PBF, the IRLH6224PBF offers identical electrical performance in non-reel form, while the SI7850DP-T1-GE3 trades 0.1 mΩ higher R_DS(on) and 3 nC higher Q_g for SO-8 compatibility-making the IRLH6224TR2PBF optimal for space-constrained, high-efficiency designs requiring PQFN thermal advantages.

Availability

IRLH6224TR2PBF is available at Aetrix Electronics and suitable for battery protection circuits, high-density DC-DC converters, and USB-C PD power delivery systems requiring stable component supply and long-term manufacturability.

Supply support for IRLH6224TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained power conversion and battery management systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLH6224TR2PBF supports 67 A continuous drain current when the bottom case temperature is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PQFN package and requires adequate PCB copper area and airflow to sustain.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 1.8–10 Ω) is recommended between driver and gate to dampen ringing caused by trace inductance and the device's 2.0 Ω intrinsic gate resistance. Layout best practices include minimizing loop area and using a dedicated ground plane beneath the gate trace.

Can the body diode be used for reverse current conduction in bidirectional applications?

Yes-the integrated body diode supports continuous source current up to 125 A (pulsed) and 40 A (continuous), with 1.2 V forward voltage at 20 A and 38–57 ns reverse recovery time. It is suitable for freewheeling in H-bridge motor drives but not for high-frequency synchronous rectification without external control.

Is the PQFN 5×6 mm package compatible with standard reflow profiles?

Yes-the IRLH6224TR2PBF meets MSL1 classification and is qualified for standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C). Its 1.2 mm profile and exposed thermal pad require solder paste stencil design with 30–40% aperture reduction to prevent voiding and ensure mechanical reliability.