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Infineon Technologies IRLH7134TR2PBF

Part No.:
IRLH7134TR2PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIRLH7134TR2PBF.pdf
Description:
MOSFET N-CH 40V 26A 8PQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,115

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Product details

Overview

IRLH7134TR2PBF from Infineon Technologies is a 40 V, 50 A (case temperature), low-profile PQFN 5×6 mm N-channel enhancement-mode Power MOSFET optimized for high-efficiency synchronous rectification and DC-DC conversion. It delivers RDS(on) = 2.8 mΩ (typ) at VGS = 10 V, Qg = 39 nC (typ), and thermal resistance RθJC(bottom) = 1.2 °C/W - enabling high-current, low-loss switching in space-constrained power stages.

For engineers reviewing the IRLH7134TR2PBF datasheet, IRLH7134TR2PBF pinout, IRLH7134TR2PBF application, or IRLH7134TR2PBF equivalent, key selection criteria include its 4.5 V gate drive compatibility (RDS(on) ≤ 3.9 mΩ), MSL1 industrial qualification, RoHS-compliant PQFN package, and body diode recovery performance (trr = 25–38 ns, Qrr = 74–110 nC) critical for hard-switched topologies.

Technical Context

This HEXFET® device uses trench-gate silicon technology to achieve ultra-low on-resistance with fast switching dynamics. Its dual-side cooling PQFN 5×6 mm package features an exposed drain pad on the bottom and integrated source/ground terminals - supporting high-current conduction while minimizing junction-to-PCB thermal impedance.

The MOSFET exhibits strong gate threshold stability (VGS(th) = 1.0–2.5 V, tempco = −5.6 mV/°C) and robust avalanche capability (EAS = 125 mJ, IAR = 50 A). Its capacitance profile (Ciss = 3720 pF, Coss = 610 pF, Crss = 350 pF) and gate charge partitioning (Qgs2 = 4.5 nC, Qgd = 16 nC) are tuned for efficient 4.5 V–10 V gate drive in high-frequency DC-DC converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - supports 12 V/24 V/36 V input rails with margin for transients in secondary-side rectification and motor drives.
RDS(on) max @ VGS = 10 V3.3 mΩ - enables <1 W conduction loss at 50 A, reducing thermal load in high-current synchronous buck stages.
Qg typical39 nC - determines gate driver power requirement and switching loss; compatible with standard 1–2 A peak gate drivers.
ID @ TC(bottom) = 25°C50 A - continuous current rating defined at PCB-mounted case temperature, reflecting real-world thermal interface conditions.
RθJC(bottom)1.2 °C/W - allows direct heat transfer from die to PCB copper, enabling >80% of total power dissipation via bottom-side thermal path.
trr / Qrr25–38 ns / 74–110 nC - defines body diode reverse recovery behavior critical for ZVS/ZCS design and EMI control in synchronous rectifiers.

Pinout & Package

PQFN 5×6 mm Outline "E" package with exposed drain pad (D) on bottom surface, 8-pin configuration (3× source, 1× gate, 4× drain tie points), MSL1 rating, and 0.9 mm maximum height.

Pin/TerminalCircuit RoleDesign Meaning
GGateControl terminal; requires 1.0–2.5 V threshold, driven by dedicated gate driver or controller PWM output.
S1–S3SourceCommon source node tied internally; connects to low-side reference plane and provides return path for load current.
D1–D4DrainHigh-side power node; all four pins bonded to exposed bottom drain pad - must be soldered to large PCB copper pour for thermal and current handling.

Key Features

FeatureDesign Value
Low RDS(on) @ 4.5 V≤ 4.9 mΩ - enables direct drive from 5 V logic or microcontroller GPIO without level-shifting in low-voltage DC-DC applications.
Low-profile package0.9 mm max height - fits under 1 mm height constraints in slim power modules and telecom bricks.
Industry-standard pinoutCompatible with PQFN 5×6 footprints used by competing 40 V MOSFETs - simplifies second-source qualification and layout reuse.
MSL1 industrial qualificationUnlimited floor life at ≤30°C/60% RH - eliminates bake requirements and supports just-in-time SMT assembly.

Applications

Secondary Side Synchronous RectificationInverters for DC Motors

Use Scenario: Used as low-side switch in isolated LLC or forward converter secondary side to replace Schottky diodes.

IC Role / Device Role / Timing Role: Power MOSFET acting as actively controlled rectifier synchronized to primary-side switching timing.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency from 92% to ≥95% in 48 V–12 V DC-DC bricks.

Use Scenario: Half-bridge low-side switch in 24 V–48 V brushed DC motor H-bridge drivers.

IC Role / Device Role / Timing Role: High-current unidirectional switch controlling motor winding current direction and braking.

Use Value: Supports 50 A continuous motor stall current with <0.15 V drop, minimizing I²R heating during PWM commutation.

DC-DC Brick ApplicationsBoost Converters

Use Scenario: Output synchronous rectifier in 1/4-brick or 1/8-brick isolated DC-DC modules delivering 12 V/20 A or 5 V/40 A.

IC Role / Device Role / Timing Role: High-density power switch mounted directly on primary PCB with thermal vias to inner ground planes.

Use Value: Enables 5×6 mm footprint to handle 50 A with RθJC = 1.2 °C/W, eliminating need for external heatsinks in convection-cooled bricks.

Use Scenario: Low-side switch in non-isolated boost converter for battery-powered industrial sensors (e.g., 3.7 V Li-ion to 12 V).

IC Role / Device Role / Timing Role: Fast-turning power switch operating at 300–500 kHz with minimal Qgd-dominated delay.

Use Value: Qgd = 16 nC and tf = 13 ns support high-frequency operation with <5% duty-cycle loss, extending battery runtime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFH7134TR2PBFSame die, updated Infineon part number post-merger; identical RDS(on), Qg, and thermal specs.No functional difference; fully interchangeable in existing designs and BOMs.Select when sourcing new production lots - IRFH7134TR2PBF is the current active part number.
SiR872DP-T1-GE340 V, 52 A, RDS(on) = 2.7 mΩ @ 10 V, Qg = 42 nC, same PQFN 5×6 package but Vishay Gen 3 trench MOSFET.Marginally lower RDS(on) but higher Qg; slightly slower turn-off (tf = 15 ns) and higher Coss (720 pF).Prefer for lowest conduction loss where gate drive strength permits; verify layout compatibility due to different internal bond wire routing.

Compared with IRFH7134TR2PBF, the original IRLH7134TR2PBF remains valid for legacy design continuity, while SiR872DP-T1-GE3 offers minor RDS(on) improvement at cost of increased switching charge - requiring re-optimization of gate resistor and driver sizing.

Availability

IRLH7134TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant PQFN packaging.

Supply support for IRLH7134TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-current switching in compact power supplies, motor drives, and renewable energy systems where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLH7134TR2PBF supports 85 A continuous drain current at TC(bottom) = 100°C and VGS = 10 V, per the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with ≥4 thermal vias under the exposed drain pad and ≥1 oz copper on inner layers.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 1–10 Ω) is required to dampen ringing and limit peak gate current during switching. The device's Qg = 39 nC and low Ciss/Crss ratio make it sensitive to gate loop inductance; omitting the resistor risks oscillation and gate oxide stress, especially at >300 kHz.

Can the body diode be used for freewheeling in a buck converter?

Yes - the integral body diode has VSD = 1.3 V at 50 A and trr = 25–38 ns, making it suitable for freewheeling in non-synchronous buck converters up to ~200 kHz. However, for >90% efficiency, synchronous rectification using complementary gate control is strongly recommended.

Is the PQFN 5×6 package lead-free and halogen-free?

Yes - the IRLH7134TR2PBF is RoHS-compliant and explicitly stated as containing no lead, bromide, or halogen. The "PbF" suffix confirms lead-free termination, and the MSL1 rating confirms moisture sensitivity compliance for standard SMT reflow profiles.

IRLH7134TR2PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 4.5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
3720 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (5x6)

IRLH7134TR2PBF FAQ

1.How can I place an order for IRLH7134TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLH7134TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLH7134TR2PBF reliable?

The price and inventory of IRLH7134TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLH7134TR2PBF is usually 5 days.

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IRLH7134TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLH7134TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLH7134TR2PBF?

For technical support, including IRLH7134TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLH7134TR2PBF requirements.

6.How does Aetrix verify that IRLH7134TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRLH7134TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLH7134TR2PBF meets industry standards.

7.What is the process for return or replacement of IRLH7134TR2PBF?

All IRLH7134TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLH7134TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLH7134TR2PBF part is unused and in its original packaging.

Return procedure for IRLH7134TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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