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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLHM620TR2PBF

Name: IRLHM620TR2PBF
Brand: Infineon Technologies
SKU: IRLHM620TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLHM620TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-VQFN Exposed Pad

Datasheet:: IRLHM620TR2PBF.pdf

Description:: MOSFET N-CH 20V 26A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:4,634

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Product details

Overview

IRLHM620TR2PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, N-channel HEXFET® Power MOSFET in PQFN 3.3 × 3.3 mm package, optimized for high-current, low-voltage switching in battery-powered systems. It delivers R_DS(on) = 1.8 mΩ (typ.) at V_GS = 4.5 V, 20 A; supports 40 A continuous drain current at T_C(bottom) = 25°C; and features ultra-low thermal resistance R_θJC(bottom) = 3.4°C/W - enabling efficient synchronous rectification in portable DC-DC converters.

For engineers reviewing the IRLHM620TR2PBF datasheet, IRLHM620TR2PBF pinout, IRLHM620TR2PBF application, or IRLHM620TR2PBF equivalent, key selection criteria include its 2.5 mΩ max R_DS(on) @ 4.5 V, 52 nC typical gate charge, 1.0 mm profile, MSL1 rating, and PQFN pinout compatibility with multi-vendor board layouts.

Technical Context

This N-channel enhancement-mode MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its threshold voltage (V_GS(th)) ranges 0.5–1.1 V, enabling robust operation with 2.5 V–4.5 V logic-level gate drivers commonly used in battery management ICs and motor control ASICs.

The device integrates a low-V_SD body diode (1.2 V max @ 20 A, T_J = 25°C) with t_rr = 41–62 ns and Q_rr = 68–100 nC, supporting high-frequency synchronous rectification without external Schottky diodes. Thermal design leverages bottom-side copper thermal pad contact for direct PCB heat sinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports input rails up to 16 V DC after derating; suitable for single-cell Li-ion (4.2 V), dual-cell (8.4 V), and 12 V automotive accessory systems.
R_DS(on) max @ 4.5 V	2.5 mΩ - Limits conduction loss to ≤1.0 W at 20 A, reducing thermal stress in compact power stages.
Q_g typ.	52 nC - Enables efficient 500 kHz–1 MHz switching with standard gate drivers (e.g., IR2110, UCC27531) without excessive drive power.
I_D cont. @ T_C = 25°C	40 A - Sustains high pulsed loads in motor H-bridge legs or OR-ing circuits when mounted on ≥2 oz Cu PCB with thermal vias.
R_θJC(bottom)	3.4°C/W - Allows junction temperature rise of only ~13.6°C at 4 W dissipation, simplifying thermal margining in space-constrained modules.
V_GS(th)	0.5–1.1 V - Ensures reliable turn-on with 2.5 V microcontroller GPIOs and eliminates need for level-shifting circuitry.
t_rr / Q_rr	41–62 ns / 68–100 nC - Minimizes reverse recovery losses during hard-switched synchronous rectification in buck converters.

Pinout & Package

IRLHM620TR2PBF uses a 8-pin PQFN 3.3 × 3.3 mm package with exposed thermal pad (pin #1 marked by dot). The bottom-side thermal pad must be soldered to a large PCB copper area for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (all sides)	Drain (common source-connected)	All perimeter pins are internally shorted to drain; serve as high-current output path and primary thermal conduction path to PCB.
Center thermal pad	Drain (electrically and thermally)	Must be soldered to solid copper pour; accounts for >90% of heat transfer from junction to PCB.
Gate (G)	Control terminal	Single dedicated gate pad located between pins 4 and 5 per outline "B"; requires <10 nH loop inductance for clean switching.
Source (S)	Reference node	Connected to pins 1–3 and 6–8 via internal metal; forms return path for load current and gate drive reference.

Key Features

Feature	Design Value
Low R_DS(on)	1.8 mΩ typ. @ V_GS = 4.5 V reduces I²R losses by >35% vs. comparable 3.3 mm PQFN MOSFETs in 10–20 A applications.
Ultra-low profile	1.0 mm max height enables integration into slim battery packs and wearable power modules where Z-height is constrained.
MSL1 rating	Unlimited floor life at ≤30°C/60% RH eliminates baking requirement before reflow, lowering manufacturing cost and risk of moisture-induced popcorning.
Industry-standard pinout	Compatible with layout footprints for Vishay SiR872DP, ON Semi NTMFS4C03N, and Diodes Inc. DMTH6005LSD, enabling drop-in substitution in existing designs.
RoHS & halogen-free	Meets IPC-J-STD-609 Class 1 for bromine/chlorine and EU RoHS Annex II limits, supporting compliance in medical and consumer electronics.

Applications

Battery-Powered DC Motor Inverter

Secondary-Side Synchronous Rectifier

Use Scenario: Bidirectional 12 V brushed DC motor control in cordless power tools with peak currents up to 35 A.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; commutates motor current with <7.5 ns turn-on delay and <37 ns fall time.

Use Value: 2.5 mΩ R_DS(on) limits resistive heating to <3 W at 30 A, extending tool runtime and preventing thermal shutdown during burst-load operation.

Use Scenario: 5 V/10 A output stage of isolated flyback converter in USB PD 3.0 chargers.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer auxiliary winding or dedicated controller.

Use Value: Body diode t_rr ≤62 ns and Q_rr ≤100 nC minimize voltage spikes and EMI, while 1.2 V V_SD ensures <50 mV forward drop advantage over 45 V Schottky at 20 A.

Load Switch for Portable Electronics

OR-ing Diode Replacement in Power Path Management

Use Scenario: Input protection and sequencing in tablet mainboard PMIC, switching 3.3 V/8 A system rail.

IC Role / Device Role / Timing Role: Single-N high-side load switch controlled by enable signal; integrated body diode blocks reverse current.

Use Value: 0.8 V typical V_GS(th) allows direct drive from 1.8 V GPIO; 1.0 mm profile fits under stacked LPDDR4 packages without interference.

Use Scenario: Dual-input power path (USB + adapter) in ruggedized handheld terminals with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back configured pair providing bidirectional blocking and zero-forward-drop OR-ing function.

Use Value: 40 A continuous rating at T_C = 25°C supports >15 W input power sharing; R_DS(on) symmetry (<±0.2 mΩ mismatch) prevents current imbalance between paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SiR872DP	R_DS(on) = 2.7 mΩ @ 4.5 V; Q_g = 49 nC; same PQFN 3.3 × 3.3 mm footprint	Slightly higher conduction loss but lower gate charge improves light-load efficiency in PWM-controlled loads	Prefer when gate drive strength is limited and switching frequency exceeds 1 MHz
ON Semiconductor NTMFS4C03N	R_DS(on) = 2.3 mΩ @ 4.5 V; Q_g = 58 nC; identical pinout and thermal pad layout	Higher gate charge increases driver power demand but tighter R_DS(on) tolerance (±10%) improves current sharing in paralleled arrays	Prefer when paralleling ≥2 devices for >60 A total current and tight thermal matching is critical

Compared with SiR872DP and NTMFS4C03N, IRLHM620TR2PBF offers the lowest R_DS(on) (2.5 mΩ max) and best thermal resistance (3.4°C/W), making it optimal for high-current, thermally constrained applications where conduction loss dominates total power loss.

Availability

IRLHM620TR2PBF is available at Aetrix Electronics and suitable for battery-powered motor inverters, secondary-side synchronous rectifiers, and high-density load switches requiring stable component supply across production lifecycles.

Supply support for IRLHM620TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with emphasis on energy efficiency and reliability.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion and motor control in portable and industrial equipment.

FAQ

What is the maximum continuous drain current for IRLHM620TR2PBF at 70°C ambient?

At T_A = 70°C with standard JEDEC 2-layer PCB layout, the continuous drain current is 21 A (per datasheet note on page 1). This value assumes no forced airflow and relies on the device's R_θJA = 46°C/W rating; actual current capability increases significantly with enhanced PCB copper area or thermal vias under the exposed pad.

Can IRLHM620TR2PBF be used in avalanche mode?

Yes - it is rated for unclamped inductive switching with E_AS = 120 mJ (single-pulse, thermally limited) and I_AR = 20 A. However, avalanche operation must be strictly limited to transient fault conditions; repeated avalanche events degrade reliability. Designers should implement overcurrent protection to avoid sustained avalanche stress.

Is the thermal pad electrically isolated?

No - the center thermal pad is internally connected to the drain terminal. It must be soldered to a PCB copper pour tied to the drain net. Isolation requires a non-conductive thermal interface material, which is not recommended due to severe thermal penalty (>10× increase in R_θJC).

Does IRLHM620TR2PBF support 2.5 V gate drive?

Yes - its V_GS(th) range (0.5–1.1 V) and R_DS(on) = 3.5 mΩ max @ V_GS = 2.5 V ensure functional turn-on with 2.5 V logic. However, full performance (R_DS(on) ≤2.5 mΩ) requires ≥4.5 V gate drive; use 3.3 V or higher for optimal conduction loss in production designs.

IRLHM620TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-VQFN Exposed Pad

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 3620 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (3x3)

IRLHM620TR2PBF FAQ

1.How can I place an order for IRLHM620TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLHM620TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLHM620TR2PBF reliable?

The price and inventory of IRLHM620TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLHM620TR2PBF is usually 5 days.

3.What payment methods are accepted for IRLHM620TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLHM620TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLHM620TR2PBF?

IRLHM620TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLHM620TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLHM620TR2PBF?

For technical support, including IRLHM620TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLHM620TR2PBF requirements.

6.How does Aetrix verify that IRLHM620TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRLHM620TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLHM620TR2PBF meets industry standards.

7.What is the process for return or replacement of IRLHM620TR2PBF?

All IRLHM620TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLHM620TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLHM620TR2PBF part is unused and in its original packaging.

Return procedure for IRLHM620TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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