Infineon Technologies IRLHM630TR2PBF

Overview

IRLHM630TR2PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 3.3 × 3.3 mm package with exposed drain pad. It delivers R_DS(on) = 2.5 mΩ (typ) at V_GS = 4.5 V, supports 40 A continuous drain current at T_C = 25°C, and features ultra-low thermal resistance (R_θJC(bottom) = 3.4°C/W), enabling high-efficiency synchronous rectification in compact DC-DC converters.

For engineers reviewing the IRLHM630TR2PBF datasheet, IRLHM630TR2PBF pinout, IRLHM630TR2PBF application, or IRLHM630TR2PBF equivalent, key selection criteria include low-voltage gate drive compatibility (2.5–4.5 V), body diode recovery performance (t_rr = 20–30 ns), junction-to-case thermal path integrity, and PQFN land pattern compliance per AN-1136.

Technical Context

This MOSFET employs trench-gate silicon process technology optimized for high-current, low-R_DS(on) operation at logic-level gate drive voltages. Its symmetric double-sided cooling design routes heat through both top copper and bottom-exposed drain pad, supporting PCB-integrated thermal management in space-constrained power stages.

The device integrates a fast-recovery body diode (Q_rr = 30–45 nC, t_rr = 20–30 ns) and exhibits stable threshold voltage (V_GS(th) = 0.5–1.1 V) with negative temperature coefficient (−3.8 mV/°C), enabling predictable current sharing in parallel configurations.

Key Specifications

Pinout & Package

PQFN 3.3 × 3.3 mm Outline "G" package with 8-pin configuration and thermally enhanced exposed drain pad on bottom surface. Pin 1 identifier marked by dot or chamfered corner per tape orientation diagram.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLHM630TR2PBF, IRLH630TRPbF offers identical electrical and thermal performance in larger reel format, while SiR872DP-T1-GE3 provides second-source assurance with <0.2 mΩ R_DS(on) penalty and verified compatibility in production-grade 24 V power stages.

Availability

IRLHM630TR2PBF is available at Aetrix Electronics and suitable for battery-powered motor inverters, secondary-side synchronous rectifiers, USB-C PD power switches, and industrial PLC digital output modules requiring stable component supply and validated PQFN thermal performance.

Supply support for IRLHM630TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, focusing on energy-efficient solutions for industrial, automotive, and consumer markets.

The IRLHM630TR2PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained DC-DC converters and motor control systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLHM630TR2PBF supports 40 A continuous drain current at T_C = 100°C when operated with V_GS = 4.5 V, as confirmed in the Absolute Maximum Ratings table on page 1 of the datasheet. This rating assumes adequate PCB copper area for thermal conduction and accounts for R_DS(on) increase with temperature.

Does this MOSFET require a gate resistor for safe switching in a 200 kHz buck converter?

Yes - a 2.2–4.7 Ω gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 250 pF) and PCB trace inductance. The typical gate charge of 41 nC means a 3.3 V MCU GPIO driving into 3.3 Ω yields ~10 ns rise time, aligning with optimal 200 kHz operation per Figure 18 gate charge waveform.

Can the exposed drain pad be connected to a non-ground net for high-side switching?

No - the exposed drain pad is electrically tied to all drain terminals (Pins 5–8) and must connect to the same potential as those pins. In high-side configurations, it must be routed to the input rail (e.g., 24 V), requiring isolation from PCB ground planes and use of thermal vias only to dedicated high-side copper islands.

Is the body diode suitable for reverse polarity protection in a 12 V automotive system?

Yes - the body diode supports 40 A continuous source current and 160 A pulsed current, with V_SD = 1.2 V at 20 A and 25°C. However, its reverse recovery time (20–30 ns) and charge (30–45 nC) make it unsuitable for high-frequency reverse-bias blocking; use only in low-frequency (<10 kHz), low-dV/dt protection schemes.