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Infineon Technologies IRLHS2242TR2PBF
- Part No.:
- IRLHS2242TR2PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerVDFN
- Datasheet:
-
IRLHS2242TR2PBF.pdf
- Description:
- MOSFET P-CH 20V 5.8A 2X2 PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,989
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Product details
Overview
IRLHS2242TR2PBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in a 2 mm × 2 mm PQFN package, rated for −20 V VDS, 31 mΩ RDS(on) at VGS = −4.5 V, and −8.5 A continuous drain current at TC(Bottom) = 25°C. It serves as a low-side load switch in battery-powered systems requiring fast turn-off, low conduction loss, and high thermal efficiency.
For engineers reviewing the IRLHS2242TR2PBF datasheet, IRLHS2242TR2PBF pinout, IRLHS2242TR2PBF application, or IRLHS2242TR2PBF equivalent, key selection criteria include verified RDS(on) at 4.5 V gate drive, PQFN thermal resistance to PCB (≤13 °C/W), body diode reverse recovery charge (Qrr = 20–30 nC), and industrial-grade MSL1 qualification.
Technical Context
This device operates as a normally-off P-channel switch with gate threshold voltage (VGS(th)) ranging from −0.4 V to −1.1 V at TJ = 25°C and exhibits negative temperature coefficient for VGS(th) (−3.8 mV/°C). Its low RDS(on) enables efficient power delivery in space-constrained battery management circuits.
The MOSFET integrates a robust intrinsic body diode with VSD = −1.2 V at −8.5 A and trr = 27–41 ns, supporting synchronous rectification and unclamped inductive switching. Total gate charge (Qg) is 9.6 nC at VDS = −10 V, enabling fast switching with moderate gate drive strength.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for battery-side load switching up to 12 V nominal systems |
| RDS(on) @ VGS = −4.5 V | 31 mΩ max - Enables ≤270 mW conduction loss at −8.5 A, critical for thermally limited PCB layouts |
| Qg | 9.6 nC typ - Supports <100 ns switching with 100 Ω gate resistor, minimizing overlap loss |
| ID @ TC(Bottom) = 25°C | −8.5 A - Continuous current rating referenced to bottom-side case temperature, aligned with thermal pad mounting |
| RθJC(Bottom) | 13 °C/W max - Confirmed junction-to-PCB thermal path for direct copper thermal pad attachment |
| Qrr | 20–30 nC - Quantifies body diode recovery burden in bidirectional battery charge/discharge paths |
| VGS(th) | −0.8 V typ - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
IRLHS2242TR2PBF uses a 6-pin PQFN (2 mm × 2 mm, 0.8 mm height) with exposed thermal pad on underside. Pin 1 (G) is gate, Pins 2/4/5/6 (D) are paralleled drain terminals, and Pins 3/1 (S) are source terminals - configured for low-inductance, high-current routing and optimal thermal transfer to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate input | Control terminal accepting −4.5 V to −12 V drive; low Qg enables fast edge rates with minimal gate driver stress |
| D (Pins 2, 4, 5, 6) | Drain connection | Four paralleled drain pads reduce current density and package inductance; tied to high-side battery rail or load return |
| S (Pins 1, 3) | Source output | Source terminals provide low-impedance return path; shared with gate pin 1 for compact layout but require isolation in gate loop |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 31 mΩ max enables use with 3.3 V microcontrollers without level-shifting, reducing BOM count |
| Exposed thermal pad | Bottom-side copper pad delivers ≤13 °C/W junction-to-PCB thermal resistance, eliminating need for heatsinks in ≤2 W dissipation |
| MSL1 industrial qualification | Moisture sensitivity level 1 allows unlimited floor life and reflow compatibility with standard Pb-free processes |
| Industry-standard PQFN pinout | 2 mm × 2 mm footprint matches common layout templates, enabling drop-in replacement across multiple vendors |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as main discharge switch controlled by protection IC. Use Value: 31 mΩ RDS(on) limits voltage drop to <265 mV at 8.5 A, preserving battery runtime and enabling accurate current sensing. | Use Scenario: VBUS path control in USB-C receptacles supporting 3 A/20 V operation. IC Role / Device Role / Timing Role: Load switch isolating downstream port electronics during hot-plug or fault conditions. Use Value: 9.6 nC Qg supports <50 μs turn-off time, meeting USB PD 3.0 fault response requirements. |
| Power Bank Load Switch | Industrial Sensor Node Power Gating |
Use Scenario: Enabling/disabling output rails in portable power banks with dual-battery inputs. IC Role / Device Role / Timing Role: High-efficiency P-channel switch managing 5 V/3.3 V system rails under firmware control. Use Value: −0.8 V VGS(th) ensures full enhancement with 3.3 V GPIO, eliminating external gate driver circuitry. | Use Scenario: Periodic power cycling of wireless sensor modules to extend battery life beyond 5 years. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch disconnecting entire subsystem during sleep mode. Use Value: ≤150 nA IDSS leakage at −16 V ensures <1 μA total system standby current, meeting LPWAN energy budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ −4.5 V; Qg = 4.5 nC; SOT-23 package | Higher conduction loss limits to ≤2 A loads; smaller footprint suits ultra-compact designs | Select when board area is constrained and current <2 A; avoid for >3 W dissipation |
| DMN2011UFG-7 | RDS(on) = 28 mΩ @ −4.5 V; Qg = 11.5 nC; 2 mm × 2 mm UDFN | Near-identical RDS(on) and thermal performance; slightly higher gate charge increases drive demand | Preferred for new designs needing second-source assurance; same PCB land pattern |
Compared with SI2301DDS-T1-GE3, IRLHS2242TR2PBF delivers 3.7× lower conduction loss at 8.5 A; versus DMN2011UFG-7, it offers 1.9 nC lower Qg, easing gate driver design while maintaining thermal capability.
Availability
IRLHS2242TR2PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, power bank load management, and industrial sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for IRLHS2242TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency, low-voltage load switching in portable and battery-operated systems where thermal density and gate drive simplicity are critical.
FAQ
What is the maximum safe operating voltage for IRLHS2242TR2PBF in continuous DC operation?
The absolute maximum VDS is −20 V, and operation above −16 V is not recommended for reliability. At −16 V and TJ = 125°C, the device maintains RDS(on) ≤43 mΩ and supports ≤5.8 A continuous current per SOA curves. Derating is required above 25°C ambient due to RθJA = 60 °C/W.
Can IRLHS2242TR2PBF be used in synchronous rectification topologies?
No - its body diode forward voltage (VSD = −1.2 V at −8.5 A) and reverse recovery charge (Qrr = 20–30 nC) are optimized for unidirectional load switching, not high-frequency freewheeling. For synchronous rectification, Infineon recommends N-channel alternatives like IRFH5004 with dedicated gate timing control.
Does the PQFN package require solder paste stencil adjustments compared to standard SO-8?
Yes - the 2 mm × 2 mm PQFN uses a 0.3 mm thick stencil aperture for the thermal pad (70% area ratio) and 0.15 mm apertures for signal pins. Reflow profile must achieve peak temperature ≥245°C for 60 seconds to ensure void-free thermal pad wetting, per IPC-7095 guidelines for bottom-terminated components.
Is IRLHS2242TR2PBF compliant with RoHS and REACH regulations?
Yes - it is RoHS-compliant (lead-free, bromide-free, halogen-free) and meets EU REACH SVHC thresholds. Certificate of Compliance (CoC) and material declarations are available upon request from Aetrix Electronics, with full traceability to Infineon's wafer fab and assembly sites.
IRLHS2242TR2PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-PowerVDFN
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.2A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 877 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-PQFN (2x2)
IRLHS2242TR2PBF FAQ
1.How can I place an order for IRLHS2242TR2PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLHS2242TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLHS2242TR2PBF reliable?
The price and inventory of IRLHS2242TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLHS2242TR2PBF is usually 5 days.
3.What payment methods are accepted for IRLHS2242TR2PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLHS2242TR2PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLHS2242TR2PBF?
IRLHS2242TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLHS2242TR2PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLHS2242TR2PBF?
For technical support, including IRLHS2242TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLHS2242TR2PBF requirements.
6.How does Aetrix verify that IRLHS2242TR2PBF is sourced from the original manufacturer or authorized distributors?
All IRLHS2242TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLHS2242TR2PBF meets industry standards.
7.What is the process for return or replacement of IRLHS2242TR2PBF?
All IRLHS2242TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLHS2242TR2PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLHS2242TR2PBF part is unused and in its original packaging.
Return procedure for IRLHS2242TR2PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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