Infineon Technologies IRLHS6242TR2PBF

Overview

IRLHS6242TR2PBF from Infineon Technologies is a 20 V, N-channel, logic-level HEXFET Power MOSFET in a 2 mm × 2 mm PQFN package with 11.7 mΩ R_DS(on) at V_GS = 4.5 V, rated for 12 A continuous drain current at T_C(Bottom) = 25°C, and optimized for high-efficiency DC-DC conversion in space-constrained power stages.

For engineers reviewing the IRLHS6242TR2PBF datasheet, IRLHS6242TR2PBF pinout, IRLHS6242TR2PBF application, or IRLHS6242TR2PBF equivalent, key selection criteria include low gate threshold (0.5–1.1 V), ultra-low thermal resistance to PCB (13°C/W), 1.0 mm profile, MSL1 industrial qualification, and body diode recovery performance (t_rr = 15–23 ns) in synchronous buck topologies.

Technical Context

This MOSFET employs a trench-gated, planar-enhancement-mode N-channel structure with integrated body diode, enabling fast switching (t_d(on) = 5.8 ns, t_f = 13 ns) and low gate charge (Q_g = 14 nC at V_DS = 10 V). Its 2.5 V turn-on capability supports direct drive from 3.3 V microcontrollers without level-shifting.

Thermal design leverages bottom-side thermal pad contact to PCB copper, achieving 13°C/W junction-to-case (bottom) resistance. The PQFN package's 6-pin configuration places source terminals on pins 1, 2, 4, and 5 for low-inductance parallel conduction paths, while gate and drain are isolated on pins 3 and 6 respectively.

Key Specifications

Pinout & Package

PQFN 2 mm × 2 mm, 0.5 mm pitch, 6-terminal package with exposed thermal pad (pin 7, not electrically connected), compliant with MSL1 and RoHS. Bottom-side thermal pad must be soldered to ≥1 in² copper area for rated thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with Si2302DS-T1-GE3 and DMN2020LSD-13, IRLHS6242TR2PBF delivers superior power density (12 A in 4 mm²), lowest thermal resistance, and fastest body diode recovery-making it optimal for high-frequency, thermally limited, single-device high-side or low-side switching.

Availability

IRLHS6242TR2PBF is available at Aetrix Electronics and suitable for USB-C PD modules, industrial motor drivers, LED constant-current supplies, and compact DC-DC converters requiring stable component supply across production lifecycles.

Supply support for IRLHS6242TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-efficiency, high-density DC-DC conversion in consumer, computing, and industrial power systems where low gate drive voltage and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRLHS6242TR2PBF at 70°C case temperature?

The maximum continuous drain current at T_C(Bottom) = 70°C is 8.3 A when driven with V_GS = 4.5 V. This derating reflects thermal limits imposed by the 13°C/W junction-to-case (bottom) resistance and 150°C maximum junction temperature. Operation above this current requires active cooling or reduced ambient conditions.

Does IRLHS6242TR2PBF support gate drive from a 1.8 V microcontroller GPIO?

Yes-its gate threshold voltage range (0.5–1.1 V) guarantees turn-on with 1.8 V logic. However, R_DS(on) rises to 15.5 mΩ at V_GS = 2.5 V, increasing conduction loss. For optimal efficiency, use 3.3 V or higher gate drive; for 1.8 V operation, verify thermal margin at target load current using the normalized R_DS(on) vs. temperature curve.

How is the thermal pad on the PQFN package connected electrically and thermally?

The exposed thermal pad (pin 7) is internally connected to the MOSFET's drain but is not assigned a numbered pin in the functional pinout. It must be soldered to a large PCB copper pour for thermal conduction. Electrical connection to drain is optional; if used for drain routing, ensure adequate creepage/clearance per safety standards. No external connection is required for thermal function alone.

What is the safe operating area (SOA) limitation at DC and 10 ms pulse widths?

At DC, the device is limited to 12 A at V_DS ≤ 2 V by package bonding; above 2 V, R_DS(on)-limited current drops rapidly. At 10 ms, SOA extends to 22 A at V_DS = 10 V, constrained by transient thermal impedance. Always consult Figure 8 (SOA chart) and apply derating for board layout, copper area, and ambient temperature.