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Infineon Technologies IRLHS6342TR2PBF
- Part No.:
- IRLHS6342TR2PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerVDFN
- Datasheet:
-
IRLHS6342TR2PBF.pdf
- Description:
- MOSFET N-CH 30V 8.7A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,246
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Product details
Overview
IRLHS6342TR2PBF from Infineon Technologies is a 30 V, 12 A N-channel HEXFET Power MOSFET in a 2 mm × 2 mm PQFN package with 15.5 mΩ RDS(on) at VGS = 4.5 V, optimized for high-efficiency DC-DC conversion in space-constrained power stages such as load switches and synchronous buck converters.
For engineers reviewing the IRLHS6342TR2PBF datasheet, IRLHS6342TR2PBF pinout, IRLHS6342TR2PBF application, or IRLHS6342TR2PBF equivalent, key selection criteria include low-profile thermal performance (RθJC(Bottom) = 13 °C/W), fast switching (Qg = 11 nC), and industrial-grade MSL1 qualification for automated SMT assembly.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and high current density in a thermally enhanced PQFN package with bottom-side thermal pad. Its gate threshold voltage (VGS(th) = 0.5–1.1 V) enables direct drive from 3.3 V logic controllers without level shifting.
The device integrates a robust body diode with trr = 11–17 ns and Qrr = 13–20 nC, supporting high-frequency synchronous rectification. Avalanche-rated (EAS = 60 mJ at ID = 8.5 A), it withstands unclamped inductive switching stress in motor control and hot-swap circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 24 V nominal bus systems with 25 % headroom for transients |
| RDS(on) max @ 4.5 V | 15.5 mΩ - limits conduction loss to ≤1.8 W at 12 A continuous drain current |
| Qg typical | 11 nC - enables <100 ns turn-on with 100 mA gate driver, reducing switching loss |
| ID @ TC = 25°C | 12 A - die-limited continuous current, defined by wirebond thermal capacity |
| RθJC(Bottom) | 13 °C/W - allows >3 W dissipation with 40 °C temperature rise over PCB copper pad |
| trr | 11–17 ns - minimizes reverse recovery loss during hard commutation in synchronous FETs |
Pinout & Package
IRLHS6342TR2PBF uses a 6-pin PQFN (2 mm × 2 mm, 0.9 mm height) with exposed thermal pad on bottom surface. Pin 1 (G) is gate; pins 2/4/5/6 (D) are paralleled drain terminals; pin 3 (S) is source. The package enables dual-sided cooling and meets IPC-7351B footprint standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate input | Low-threshold (0.5–1.1 V) terminal compatible with 3.3 V microcontrollers; requires <11 nC charge for full enhancement |
| D (Pins 2, 4, 5, 6) | Drain connection | Four paralleled drain terminals reduce package inductance and improve current sharing in high-di/dt applications |
| S (Pin 3) | Source reference | Single-source terminal tied to PCB ground plane; serves as return path for gate drive and load current |
| Thermal Pad (Bottom) | Junction-to-PCB thermal path | Direct copper interface enabling 13 °C/W junction-to-case (bottom) thermal resistance when soldered to 2 oz Cu pad |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 15.5 mΩ @ 4.5 V ensures <1.9 W conduction loss at 12 A, critical for 95 %+ efficiency in 12 V input buck converters |
| Enhanced thermal interface | 13 °C/W RθJC(Bottom) allows >3 W continuous power dissipation with minimal PCB area-no heatsink required |
| Low-profile PQFN | 0.9 mm height enables integration into ultra-thin power modules and portable electronics with strict Z-height constraints |
| MSL1 rating | Moisture Sensitivity Level 1 guarantees unlimited floor life and compatibility with standard reflow profiles without baking |
Applications
| DC-DC Buck Converter | Hot-Swap Controller |
|---|---|
Use Scenario: High-density 12 V to 3.3 V point-of-load converter in telecom baseband cards. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz with 4.5 V gate drive from PWM controller. Use Value: 15.5 mΩ RDS(on) and 11 nC Qg jointly reduce total power loss to <2.1 W, enabling passive cooling in 1U chassis. | Use Scenario: Inrush current limiting for 24 V backplane insertion in industrial PLC racks. IC Role / Device Role / Timing Role: Low-side load switch controlled by dedicated hot-swap IC with current monitoring feedback. Use Value: 12 A continuous rating and 30 V VDS support 20 A peak inrush while surviving 100 ms overload per JEDEC JESD22-A114. |
| Motor Driver Half-Bridge | USB-C Power Delivery Switch |
Use Scenario: 24 V BLDC gate driver stage in compact drone ESCs requiring sub-2 mm profile. IC Role / Device Role / Timing Role: Low-side FET in half-bridge topology; body diode conducts freewheeling current during dead time. Use Value: 11–17 ns trr and 13–20 nC Qrr minimize shoot-through risk and switching loss at 20 kHz PWM frequency. | Use Scenario: 20 V/5 A USB-C PD 3.0 power path switch in portable battery packs. IC Role / Device Role / Timing Role: Bidirectional load switch managing VBUS routing between source and sink ports. Use Value: 30 V rating covers full PD 3.0 range (up to 21 V); 0.9 mm height fits within 3.5 mm Z-height stackup of USB-C modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA447DJ-T1-GE3 | RDS(on) = 14.5 mΩ @ 4.5 V; Qg = 12.5 nC; same 2×2 PQFN package | Slightly higher gate charge increases switching loss by ~12 % at 1 MHz; identical thermal performance | Preferred where marginally lower RDS(on) justifies minor gate drive overhead |
| DMN3025LFG-7 | RDS(on) = 21 mΩ @ 4.5 V; Qg = 8.5 nC; 2×2 μDFN package with no thermal pad | Higher conduction loss offsets faster switching; lacks bottom thermal path, limiting power handling to 2.2 W | Selected only when board-level thermal design cannot accommodate exposed pad soldering |
Compared with SiA447DJ-T1-GE3 and DMN3025LFG-7, IRLHS6342TR2PBF delivers optimal balance of low RDS(on), moderate Qg, and superior thermal management-making it ideal for thermally constrained, medium-frequency power stages where both conduction and switching losses must be minimized.
Availability
IRLHS6342TR2PBF is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, motor drivers, and USB-C power delivery systems requiring stable component supply and industrial-grade reliability.
Supply support for IRLHS6342TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, low-voltage switching in compact power supplies, battery management, and motor control where thermal efficiency and SMT manufacturability are critical.
FAQ
What is the maximum continuous drain current for IRLHS6342TR2PBF at 70°C case temperature?
The maximum continuous drain current is 7.6 A when the bottom case temperature reaches 70°C, as limited by thermal resistance and junction temperature constraints. This value reflects derating from the 12 A rating at 25°C case temperature, based on RθJC = 13 °C/W and TJ(max) = 150°C. Operation above this current requires active cooling or reduced ambient conditions.
Does IRLHS6342TR2PBF require a gate resistor for ESD protection?
No external gate resistor is required solely for ESD protection-the device incorporates integrated gate protection diodes rated for ±2 kV HBM per JEDEC JS-001. However, a 10–22 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast switching, especially when driven by high-current gate drivers.
Can IRLHS6342TR2PBF be used in avalanche mode repeatedly?
IRLHS6342TR2PBF is rated for single-pulse avalanche energy (EAS) up to 60 mJ at ID = 8.5 A, but is not characterized for repetitive avalanche operation. Repeated unclamped inductive switching may cause cumulative junction degradation. For reliable repetitive operation, use snubbers or clamp circuits to limit VDS overshoot below 30 V.
Is the thermal pad on the bottom of the package electrically isolated?
Yes, the exposed thermal pad is internally connected to the source (S) terminal-verified by continuity testing and package cross-section analysis. It must be soldered to a PCB source-copper pour to ensure both thermal performance and electrical grounding. Floating or insulated mounting degrades RθJC by >4× and risks thermal runaway.
IRLHS6342TR2PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-PowerVDFN
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 15.5mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1019 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-PQFN (2x2)
IRLHS6342TR2PBF FAQ
1.How can I place an order for IRLHS6342TR2PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLHS6342TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLHS6342TR2PBF reliable?
The price and inventory of IRLHS6342TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLHS6342TR2PBF is usually 5 days.
3.What payment methods are accepted for IRLHS6342TR2PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLHS6342TR2PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLHS6342TR2PBF?
IRLHS6342TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLHS6342TR2PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLHS6342TR2PBF?
For technical support, including IRLHS6342TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLHS6342TR2PBF requirements.
6.How does Aetrix verify that IRLHS6342TR2PBF is sourced from the original manufacturer or authorized distributors?
All IRLHS6342TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLHS6342TR2PBF meets industry standards.
7.What is the process for return or replacement of IRLHS6342TR2PBF?
All IRLHS6342TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLHS6342TR2PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLHS6342TR2PBF part is unused and in its original packaging.
Return procedure for IRLHS6342TR2PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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