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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLI2203NPBF

Name: IRLI2203NPBF
Brand: Infineon Technologies
SKU: IRLI2203NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI2203NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLI2203NPBF.pdf

Description:: MOSFET N-CH 30V 61A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,477

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Product details

Overview

IRLI2203NPBF from Infineon Technologies is a 30 V, 115 A, N-channel HEXFET® Power MOSFET in TO-220 Full-Pak package, designed for high-efficiency DC-DC conversion and motor control switching. It features R_DS(on) = 3.3 mΩ (max) at V_GS = 10 V, Q_g = 85 nC, and operates up to T_j = 175 °C.

For engineers reviewing the IRLI2203NPBF datasheet, IRLI2203NPBF pinout, IRLI2203NPBF application, or IRLI2203NPBF equivalent, key selection criteria include low conduction loss at high current, robust avalanche rating (E_AS = 490 mJ), thermal performance in TO-220 Full-Pak, and compatibility with 5 V gate drive in logic-level operation.

Technical Context

This MOSFET employs trench-gate, silicon-based HEXFET architecture optimized for reduced gate charge and on-resistance trade-off. Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) enables direct interface with microcontroller GPIOs without level-shifting.

The device integrates a monolithic ESD protection diode and is rated for repetitive avalanche energy, supporting rugged operation in inductive load switching such as H-bridge motor drivers and synchronous rectification stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
I_D (continuous)	115 A @ T_c = 25 °C - Sustained current capability when mounted on heatsink; derates to ~70 A at T_c = 100 °C.
R_DS(on)	3.3 mΩ max @ V_GS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-current power stages.
Q_g	85 nC - Total gate charge determining driver strength requirement and switching loss in PWM operation.
E_AS	490 mJ - Rated single-pulse avalanche energy supports reliable turn-off under inductive fault conditions.
V_GS(th)	1.0–2.0 V - Ensures full enhancement with 3.3 V or 5 V logic-level gate drive, eliminating need for external level shifters.

Pinout & Package

IRLI2203NPBF is housed in a TO-220 Full-Pak package with insulated tab, enabling direct mounting to heatsink without electrical isolation hardware. The package includes molded plastic body, copper leadframe, and Pb-free (RoHS-compliant) terminations.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulating washer if heatsink is grounded.
Source	Reference node for gate drive and current return	Low-inductance connection point for source loop; critical for minimizing switching oscillation.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <1 µA bias; sensitive to ESD and ringing without proper RC snubbing.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V MCU outputs-eliminates gate driver IC in low-voltage systems.
TO-220 Full-Pak insulation	Integrated isolation between drain tab and leads allows direct heatsink mounting without mica washers or sil-pads.
175 °C junction rating	Enables operation in high-ambient environments (e.g., engine bay, enclosed power supplies) without derating penalties.
Repetitive avalanche rated	Guaranteed E_AS = 490 mJ supports robustness in motor commutation and relay driving without external clamping.

Applications

Automotive HVAC Blower Control

Industrial 24 V DC Motor Drive

Use Scenario: PWM-controlled blower fan in passenger compartment climate system with 12–16 V supply and peak loads up to 90 A.

IC Role / Device Role / Timing Role: High-side or half-bridge switch delivering regulated torque and speed via duty-cycle modulation.

Use Value: Low R_DS(on) minimizes heat generation in confined space; logic-level gate simplifies MCU interface in cost-sensitive modules.

Use Scenario: Directional control of 24 V brushed DC motors in conveyor and actuator systems with frequent start-stop cycles.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration handling bidirectional current up to 115 A.

Use Value: Avalanche rating absorbs inductive kickback during rapid direction reversal, reducing snubber component count.

Server PSU Synchronous Rectifier

Telecom 48 V Intermediate Bus Converter

Use Scenario: Secondary-side synchronous rectification in 12 V output stage of 80 PLUS Titanium server power supply.

IC Role / Device Role / Timing Role: Low-V_DS MOSFET replacing Schottky diode to reduce conduction loss at high current density.

Use Value: 3.3 mΩ R_DS(on) cuts forward voltage drop by >80% vs. 0.45 V diode, improving efficiency by ~0.5% at full load.

Use Scenario: Primary-side high-frequency switching in isolated 48 V-to-12 V DC-DC module for base station power distribution.

IC Role / Device Role / Timing Role: Main switching transistor in active clamp forward or LLC resonant topology.

Use Value: 85 nC Q_g enables efficient 300–500 kHz operation with standard gate drivers, balancing switching and conduction losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL2203N	Same die, non-RoHS version with SnPb terminations; identical R_DS(on), Q_g, and thermal specs.	Restricted to legacy industrial equipment where RoHS exemption applies; not suitable for new automotive designs.	Select only if Pb-containing assembly process is mandated and compliance documentation is verified.
STP115N3LLH6	Higher R_DS(on) (4.0 mΩ), lower Q_g (65 nC); same V_DS/I_D ratings and TO-220FP package.	Better suited for higher-frequency switching (>1 MHz) where gate charge dominates loss; less optimal for high-current conduction-limited designs.	Prefer when operating above 400 kHz and thermal margin allows higher on-resistance.

Compared with IRLI2203NPBF, IRL2203N offers identical performance but lacks RoHS compliance, while STP115N3LLH6 trades 0.7 mΩ higher conduction loss for 20 nC lower gate charge-favoring high-frequency efficiency over peak current capability.

Availability

IRLI2203NPBF is available at Aetrix Electronics and suitable for automotive HVAC systems, industrial motor drives, server power supplies, and telecom DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRLI2203NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-current, low-R_DS(on) silicon solutions for demanding switching applications in automotive, computing, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRLI2203NPBF at 100 °C case temperature?

At T_c = 100 °C, the maximum continuous drain current is 70 A. This value is derived from the device's thermal resistance (R_θJC = 1.2 °C/W) and maximum junction temperature (175 °C), ensuring safe operation within SOA limits under sustained load.

Does IRLI2203NPBF require a gate resistor for stability in PWM applications?

Yes-a 10–47 Ω gate resistor is recommended to dampen parasitic oscillation and limit peak gate current. The 85 nC gate charge and low gate impedance make it susceptible to ringing without controlled turn-on/turn-off slew rates.

Can IRLI2203NPBF be used in parallel configurations for higher current handling?

Yes, but requires matched gate drive layout, individual gate resistors, and current-sharing verification. Its positive temperature coefficient of R_DS(on) promotes inherent current sharing, though thermal coupling between devices must be minimized to avoid thermal runaway.

Is the TO-220 Full-Pak tab electrically isolated from the source pin?

No-the drain is internally connected to the metal tab. The Full-Pak construction provides insulation *between the tab and the leads*, not between drain and source. Electrical isolation from heatsink is required unless the heatsink is floating or drain-referenced.

IRLI2203NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRLI2203NPBF FAQ

1.How can I place an order for IRLI2203NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI2203NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI2203NPBF reliable?

The price and inventory of IRLI2203NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI2203NPBF is usually 5 days.

3.What payment methods are accepted for IRLI2203NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI2203NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI2203NPBF?

IRLI2203NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI2203NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI2203NPBF?

For technical support, including IRLI2203NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI2203NPBF requirements.

6.How does Aetrix verify that IRLI2203NPBF is sourced from the original manufacturer or authorized distributors?

All IRLI2203NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI2203NPBF meets industry standards.

7.What is the process for return or replacement of IRLI2203NPBF?

All IRLI2203NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLI2203NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI2203NPBF part is unused and in its original packaging.

Return procedure for IRLI2203NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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