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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLI2910PBF

Name: IRLI2910PBF
Brand: Infineon Technologies
SKU: IRLI2910PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI2910PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLI2910PBF.pdf

Description:: MOSFET N-CH 100V 31A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,917

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Product details

Overview

IRLI2910PBF from Infineon (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak package, rated for 100 V V_DS, 31 A continuous drain current at T_C = 25°C, 0.026 Ω R_DS(on) at V_GS = 10 V, and fully avalanche-rated to 520 mJ. It serves as a high-efficiency main switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRLI2910PBF datasheet, IRLI2910PBF pinout, IRLI2910PBF application, or IRLI2910PBF equivalent, key selection criteria include its isolated TO-220 Full-Pak thermal performance (R_θJC = 2.4 °C/W), 2.5 kV_RMS isolation rating, logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), and body diode recovery characteristics (t_rr = 240–350 ns).

Technical Context

This MOSFET employs fifth-generation HEXFET process technology to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its isolated package integrates creepage distance of 4.8 mm and 2.5 kV_RMS isolation-equivalent to a 100 µm mica barrier-enabling direct heatsink mounting without additional insulation hardware.

The device features fast switching dynamics (t_d(on) = 11 ns, t_f = 55 ns), low gate charge (Q_g = 140 nC), and robust body diode performance (V_SD = 1.3 V at I_S = 16 A, Q_rr = 1.8–2.7 µC), making it suitable for hard-switched topologies requiring high efficiency and reliability under repetitive stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 72 V bus systems with margin for transient overvoltage
R_DS(on)	0.026 Ω @ V_GS = 10 V - enables <1 W conduction loss at 20 A, reducing thermal load
I_D (continuous)	31 A @ T_C = 25°C - delivers high current density in compact TO-220 footprint
E_AS	520 mJ - withstands single-pulse inductive energy without failure in motor control or SMPS
R_θJC	2.4 °C/W - allows efficient heat transfer to heatsink, enabling >50 W dissipation with modest cooling
V_GS(th)	1.0–2.0 V - compatible with 3.3 V and 5 V microcontroller outputs without level-shifting
t_rr	240–350 ns - limits reverse recovery losses in synchronous rectification and half-bridge operation

Pinout & Package

IRLI2910PBF uses the TO-220 Full-Pak package: electrically isolated metal tab (drain-connected), single-screw or clip-mountable, with 2.5 kV_RMS isolation and 4.8 mm creepage distance. The molded compound eliminates need for mica washers or insulating pads in commercial-industrial designs.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input for channel conduction	Logic-level compatible; requires ≤2.0 V to turn on, low Q_g enables fast switching with minimal driver effort
D (Drain)	Main high-side current path; connected to tab	Tab is internally tied to drain and electrically isolated-enables direct heatsink mounting without insulation hardware
S (Source)	Return path for load current; reference for gate drive	Source terminal is electrically separate from tab; must be routed to system ground or low-side switch node

Key Features

Feature	Design Value
Fully isolated TO-220 Full-Pak	2.5 kV_RMS isolation and 4.8 mm creepage enable safe operation in grounded-heatsink industrial systems
Logic-level gate drive	V_GS(th) = 1.0–2.0 V ensures reliable turn-on from standard MCU GPIOs without external level shifters
Ultra-low R_DS(on)	0.026 Ω @ 10 V reduces conduction loss by >35% vs. legacy 100 V MOSFETs in same package
Repetitive avalanche rated	6.3 mJ E_AR supports robust operation in inductive load switching without derating
Low Q_g / Q_gd ratio	140 nC total gate charge with 81 nC Q_gd improves Miller immunity and switching controllability

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor H-bridge driver in factory automation equipment operating from 48 V supply.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional 25 A peak current with PWM up to 20 kHz.

Use Value: Low R_DS(on) minimizes I²R heating during stall conditions; isolated tab simplifies heatsinking in grounded-chassis enclosures.

Use Scenario: Primary-side synchronous rectifier in 12 V/30 A isolated flyback converter for telecom power shelf.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency above 85% at full load.

Use Value: Fast t_rr and low Q_rr reduce switching losses during zero-voltage transition; logic-level gate enables direct drive from controller's gate output.

Industrial Power Supplies

UPS Systems

Use Scenario: Output stage switch in 3 kW modular AC-DC front-end with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: Main switching transistor in LLC half-bridge leg, conducting 31 A RMS at 100 kHz.

Use Value: Avalanche rating ensures survivability during line transients; R_θJC = 2.4 °C/W enables stable operation with forced-air cooling only.

Use Scenario: Battery disconnect and inverter bridge switch in 1.5 kVA online UPS with dual 48 V battery banks.

IC Role / Device Role / Timing Role: Bidirectional power path switch managing charge/discharge and inverter output with fault isolation.

Use Value: 2.5 kV_RMS isolation prevents ground-loop faults between battery bank and AC output; high ID_M = 190 A handles surge currents during transfer switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PBF	R_DS(on) = 0.008 Ω @ 10 V (lower), but V_GS(th) = 2.0–4.0 V (not logic-level); TO-220 non-isolated	Requires gate driver for 3.3 V logic; needs mica insulator for heatsink mounting	Prefer when lowest conduction loss is critical and gate drive voltage ≥5 V is available
STP110N10F7	R_DS(on) = 0.0095 Ω @ 10 V; V_GS(th) = 2.5–3.5 V; TO-220FP (isolated), R_θJC = 2.5 °C/W	Higher threshold requires level-shifting; similar isolation but slightly higher thermal resistance	Choose when sourcing STMicroelectronics ecosystem parts and gate drive ≥4.5 V is assured

Compared with IRLI2910PBF, IRF3205PBF offers lower R_DS(on) but lacks logic-level drive and isolation; STP110N10F7 matches isolation and thermal performance but demands higher gate voltage-making IRLI2910PBF optimal for 3.3 V/5 V-controlled, heatsink-grounded industrial systems.

Availability

IRLI2910PBF is available at Aetrix Electronics and suitable for motor control, DC-DC converters, industrial power supplies, and UPS systems requiring stable component supply, long-lifecycle support, and certified traceable sourcing.

Supply support for IRLI2910PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET innovation.

The IRLI2910PBF belongs to the fifth-generation HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in grounded-heatsink industrial power conversion and motor drive applications.

FAQ

Is the IRLI2910PBF pin-compatible with standard TO-220 MOSFETs?

Yes, IRLI2910PBF uses standard TO-220AB mechanical outline with Gate-Drain-Source pin order (G-D-S). However, its Full-Pak variant has an electrically isolated drain tab-unlike standard TO-220-so PCB layout must accommodate isolation requirements and avoid unintentional tab grounding.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 22 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. Derating follows linear factor of 0.42 W/°C beyond 25°C case temperature for power dissipation.

Does the IRLI2910PBF require a heatsink in typical operation?

Yes-its R_θJC = 2.4 °C/W and P_D = 63 W rating assume use of a heatsink. At 31 A and 0.026 Ω R_DS(on), conduction loss exceeds 25 W, necessitating heatsink mounting to maintain T_J ≤ 175°C under sustained load.

Can the body diode be used for synchronous rectification?

Yes-the integral body diode has V_SD = 1.3 V at 16 A and t_rr = 240–350 ns, supporting synchronous rectification in flyback and forward converters up to ~100 kHz. However, dedicated Schottky or GaN FETs offer lower loss at higher frequencies.

IRLI2910PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRLI2910PBF FAQ

1.How can I place an order for IRLI2910PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI2910PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI2910PBF reliable?

The price and inventory of IRLI2910PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI2910PBF is usually 5 days.

3.What payment methods are accepted for IRLI2910PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI2910PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI2910PBF?

IRLI2910PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI2910PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI2910PBF?

For technical support, including IRLI2910PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI2910PBF requirements.

6.How does Aetrix verify that IRLI2910PBF is sourced from the original manufacturer or authorized distributors?

All IRLI2910PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI2910PBF meets industry standards.

7.What is the process for return or replacement of IRLI2910PBF?

All IRLI2910PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLI2910PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI2910PBF part is unused and in its original packaging.

Return procedure for IRLI2910PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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