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Infineon Technologies IRLI3705NPBF

Part No.:
IRLI3705NPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIRLI3705NPBF.pdf
Description:
MOSFET N-CH 55V 52A TO220AB FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,820

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Product details

Overview

IRLI3705NPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak package, rated for 55 V VDS, 52 A continuous drain current at 25°C, and 0.010 Ω RDS(on) at VGS = 10 V. It integrates an optimized body diode with 94 ns reverse recovery time and is fully avalanche-rated to 340 mJ, enabling robust operation in DC-DC converters, motor drives, and high-current switching power supplies.

For engineers reviewing the IRLI3705NPBF datasheet, IRLI3705NPBF pinout, IRLI3705NPBF application, or IRLI3705NPBF equivalent, key selection criteria include its isolated TO-220 Full-Pak thermal performance (RθJC = 2.6 °C/W), gate threshold voltage range (1.0–2.0 V), total gate charge (98 nC), and 2.5 kVRMS isolation rating - all critical for high-reliability industrial power switching designs.

Technical Context

This HEXFET device uses advanced silicon processing to minimize on-resistance per die area while maintaining fast switching (tr = 140 ns, tf = 78 ns) and rugged unclamped inductive switching capability. Its logic-level gate drive enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

The TO-220 Full-Pak package provides integrated electrical isolation (2.5 kVRMS) and low thermal resistance between junction and case, eliminating external insulators in commercial-industrial heatsink mounting. The internal source/drain inductances (LS = 7.5 nH, LD = 4.5 nH) are characterized for accurate high-speed layout modeling.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage before avalanche conduction; defines use in ≤48 V bus systems.
RDS(on)0.010 Ω @ VGS = 10 V - Enables <1 W conduction loss at 30 A, reducing heatsink requirements.
ID (continuous)52 A @ TC = 25°C - Supports high-current loads such as BLDC motor phases or server VRMs.
Qg98 nC - Determines gate driver power requirement and switching loss trade-off at 100 kHz+ frequencies.
EAS340 mJ - Specifies single-pulse avalanche energy handling; critical for inductive load turn-off reliability.
VGS(th)1.0–2.0 V - Ensures full enhancement with standard logic-level outputs (e.g., STM32 GPIO, Arduino).
trr / Qrr94 ns / 290 nC - Quantifies body diode recovery behavior in synchronous rectification and freewheeling paths.

Pinout & Package

IRLI3705NPBF uses the TO-220 Full-Pak package: electrically isolated tab (drain-connected), single-screw or clip-mountable, with 2.5 kVRMS isolation and 4.8 mm sink-to-lead creepage distance. Dimensions conform to standard TO-220AB outline but with molded-in isolation barrier replacing mica washers.

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control electrodeLogic-level input (1–2 V threshold); requires ≤98 nC charge for full enhancement.
Drain (D)High-side switched terminalInternally connected to isolated metal tab; serves as primary heat path and high-voltage node.
Source (S)Reference node / return pathLow-impedance connection to PCB ground plane; carries full load current and body diode return current.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.0 V, compatible with 3.3 V/5 V MCU outputs without buffer stages.
Fully isolated TO-220 Full-PakEliminates need for insulating pads or shoulder washers in heatsink mounting; certified 2.5 kVRMS isolation.
High avalanche energy rating340 mJ single-pulse EAS ensures survivability during inductive load interruption without snubbers.
Optimized body diode94 ns trr and 290 nC Qrr support efficient synchronous rectification in buck converters.
Low thermal resistanceRθJC = 2.6 °C/W enables >50 W dissipation with modest heatsinking at TC = 100°C.

Applications

Motor Drive InverterDC-DC Synchronous Buck Converter

Use Scenario: Half-bridge phase leg in 24–48 V BLDC motor controllers driving fans, pumps, or robotics actuators.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 52 A peak phase current with <100 ns switching transitions.

Use Value: Low RDS(on) reduces I²R losses by >30% vs. legacy 0.02 Ω MOSFETs, improving efficiency at 10–20 kHz PWM.

Use Scenario: Main switch in 12 V → 3.3 V/5 V point-of-load converter for FPGA or CPU core rails.

IC Role / Device Role / Timing Role: Primary high-side switch; operates at 300–500 kHz with controlled dv/dt (5.0 V/ns max).

Use Value: 98 nC Qg and 140 ns rise time enable stable ZVS/ZCS design while minimizing gate drive loss.

Industrial Power Supply Output StageHot-Swap OR'ing Circuit

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifiers delivering up to 100 A output.

IC Role / Device Role / Timing Role: Body-diode-assisted freewheeling path; conducts reverse current during dead-time with 1.3 V VSD.

Use Value: 290 nC Qrr limits reverse recovery overshoot, reducing EMI and stress on adjacent FETs.

Use Scenario: Back-to-back configuration for redundant 24 V supply OR'ing in PLC or I/O modules.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch; leverages low RDS(on) to minimize insertion loss (<0.25 V drop at 20 A).

Use Value: 0.010 Ω on-resistance ensures <5 W conduction loss per device at full load, simplifying thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF3705ZPBFRDS(on) = 0.012 Ω @ 10 V; higher Qg (110 nC); non-isolated TO-220AB package.Lacks 2.5 kVRMS isolation; requires external insulator for heatsink mounting.Select when cost sensitivity outweighs isolation needs and board space allows insulator placement.
STP55NF06LVDS = 60 V; RDS(on) = 0.014 Ω @ 10 V; VGS(th) = 1.0–2.5 V; TO-220FP package (isolated, lower power rating).Lower PD (45 W) and higher RθJA (62 °C/W); less suitable for sustained 50 A operation.Prefer for space-constrained designs where 45 W dissipation suffices and footprint compatibility is required.

Compared with IRLI3705NPBF, IRF3705ZPBF trades isolation for marginally lower cost and similar conduction loss, while STP55NF06L offers wider VDS headroom but reduced thermal capability - making IRLI3705NPBF optimal for high-current, isolated, industrial-grade switching where reliability and heatsink integration are prioritized.

Availability

IRLI3705NPBF is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC synchronous buck converters, industrial power supply output stages, and hot-swap OR'ing circuits requiring stable component supply across multi-year production cycles.

Supply support for IRLI3705NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and embedded power systems.

FAQ

Is IRLI3705NPBF RoHS-compliant and lead-free?

Yes, IRLI3705NPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU. The "PbF" suffix explicitly denotes lead-free packaging and termination, verified through Infineon's material declarations and third-party testing reports.

What is the maximum recommended gate resistor value for reliable switching?

For safe turn-on with minimal overshoot, a gate resistor of 10–22 Ω is recommended when driving from a 5 V logic source. At 100 kHz operation, this limits peak gate current to <10 A while keeping tr/tf within datasheet specifications (140 ns/78 ns).

Can IRLI3705NPBF be used in parallel configurations?

Yes, it supports paralleling due to its positive temperature coefficient of RDS(on) (see Fig. 4). Matching gate drive impedance and symmetrical PCB layout are essential; derate total current by 15% to account for thermal imbalance between devices.

Does the TO-220 Full-Pak package require thermal compound between tab and heatsink?

Yes, thermal interface material (TIM) is required. Although the package provides electrical isolation, its molded compound has higher thermal resistance than bare copper; using silicone-based TIM (0.2–0.5 W/m·K) reduces RθJC by up to 15% versus dry mounting.

IRLI3705NPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
10mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
98 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
3600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
58W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB Full-Pak

IRLI3705NPBF FAQ

1.How can I place an order for IRLI3705NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI3705NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI3705NPBF reliable?

The price and inventory of IRLI3705NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI3705NPBF is usually 5 days.

3.What payment methods are accepted for IRLI3705NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI3705NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI3705NPBF?

IRLI3705NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI3705NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI3705NPBF?

For technical support, including IRLI3705NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI3705NPBF requirements.

6.How does Aetrix verify that IRLI3705NPBF is sourced from the original manufacturer or authorized distributors?

All IRLI3705NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI3705NPBF meets industry standards.

7.What is the process for return or replacement of IRLI3705NPBF?

All IRLI3705NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLI3705NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI3705NPBF part is unused and in its original packaging.

Return procedure for IRLI3705NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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