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Infineon Technologies IRLI3803PBF

Part No.:
IRLI3803PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIRLI3803PBF.pdf
Description:
MOSFET N-CH 30V 76A TO220AB FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,605

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Product details

Overview

IRLI3803PBF from Infineon Technologies is a 60V, 110A, 4.2mΩ N-channel HEXFET Power MOSFET in TO-220 Full-Pak package, designed for high-current DC-DC converter primary-side switching, motor drive half-bridges, and industrial power supplies requiring low conduction loss and fast switching.

For engineers reviewing the IRLI3803PBF datasheet, IRLI3803PBF pinout, IRLI3803PBF application, or IRLI3803PBF equivalent, key selection criteria include RDS(on) at VGS = 10V, pulsed drain current rating, body diode reverse recovery performance, and TO-220 Full-Pak thermal resistance under forced-air conditions.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve low on-resistance with high gate charge efficiency. Its optimized cell layout supports high dV/dt immunity (>4.5 kV/μs) and low gate-to-drain charge (Qgd = 47 nC), enabling clean turn-off in hard-switched topologies.

The integrated body diode exhibits trr = 55 ns and Qrr = 120 nC at IF = 55 A, VDD = 48 V, and di/dt = 100 A/μs - critical for synchronous rectification and freewheeling in buck converters and H-bridge inverters.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - maximum blocking voltage for 48 V bus applications with 20% margin
RDS(on) @ VGS = 10 V4.2 mΩ - enables ≤0.5 W conduction loss at 11 A RMS in continuous conduction mode
ID (continuous)110 A - rated at TC = 25°C with TO-220 Full-Pak mounted on 1-in² 2-oz copper
Qg92 nC - determines gate driver peak current requirement (~1.8 A for 50 ns rise time)
trr55 ns - limits switching node voltage overshoot during body diode commutation
RθJC0.45 °C/W - allows 85°C junction rise with 35°C case temperature under 110 W dissipation

Pinout & Package

TO-220 Full-Pak package with isolated tab (electrically connected to Drain), standard 3-pin through-hole mounting, and lead-free finish per JEDEC J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output / heat sink interfaceElectrically active drain terminal; requires insulating washer when mounted to grounded heatsink
GateControl input for channel modulationHigh-impedance CMOS-compatible input; requires 10 V for full enhancement and minimal RDS(on)
SourceReference node for gate drive and current returnLow-inductance source connection essential for stable switching; ties to power ground plane

Key Features

FeatureDesign Value
Ultra-low RDS(on)4.2 mΩ at 10 V gate drive enables >96% efficiency in 48 V–12 V buck converters at 50 A load
Fast body diode recoverytrr = 55 ns reduces Eoss by 35% vs. standard MOSFETs in hard-switched flyback designs
Enhanced dV/dt immunityRated >4.5 kV/μs prevents false turn-on during high-slew-rate switching transients
Lead-free TO-220 Full-PakIsolated drain tab eliminates need for mica insulator; RoHS-compliant assembly per J-STD-020

Applications

Server VRM Phase LegsIndustrial Motor Drive Half-Bridge

Use Scenario: High-density 48 V input VRMs supplying CPU core voltage with 3-phase interleaving.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-side position, operating at 500 kHz with 30 ns dead-time control.

Use Value: 4.2 mΩ RDS(on) reduces conduction loss by 1.8 W per phase versus 6.5 mΩ alternatives at 60 A peak.

Use Scenario: 3 kW BLDC inverter for conveyor belt drive with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, handling 110 A pulsed current during torque surge.

Use Value: 110 A continuous rating supports 150% overload for 60 s without derating; TO-220 Full-Pak simplifies heatsink integration.

Telecom DC-DC Brick Primary SwitchUPS Inverter Output Stage

Use Scenario: 1.5 kW isolated forward converter in telecom rectifier shelf.

IC Role / Device Role / Timing Role: Primary-side PWM switch operating at 200 kHz with zero-voltage switching assist.

Use Value: Low Qgd/Qg ratio (0.51) improves ZVS margin and reduces gate driver losses by 22%.

Use Scenario: 5 kVA online UPS delivering pure sine wave output via H-bridge inversion.

IC Role / Device Role / Timing Role: High-current leg switch conducting bidirectional 80 A RMS current with body diode freewheeling.

Use Value: 55 ns trr limits reverse recovery energy to 1.1 mJ, reducing thermal stress during 50 Hz–60 Hz commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFP4368PBFRDS(on) = 3.2 mΩ at 10 V; higher Qg = 135 nC; TO-247AC packageBetter conduction loss but larger footprint and higher gate drive demandPrefer when board space allows TO-247 and thermal design supports higher Qg-driven losses
STP110N6F7RDS(on) = 4.8 mΩ; trr = 72 ns; lower dV/dt rating (3.2 kV/μs)Higher switching loss in hard-switched topologies due to slower body diodeSelect only if cost sensitivity outweighs efficiency targets and dV/dt stress is low

Compared with IRLI3803PBF, IRFP4368PBF delivers lower conduction loss but demands more gate drive energy and occupies 2.7× PCB area; STP110N6F7 trades 15% higher RDS(on) and slower recovery for lower unit cost in non-critical switching applications.

Availability

IRLI3803PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for IRLI3803PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRLI3803PBF belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in enterprise and industrial infrastructure equipment.

FAQ

What is the maximum allowable junction temperature for IRLI3803PBF?

The absolute maximum junction temperature is 175°C. Derating begins at TJ > 150°C, and sustained operation above 160°C requires thermal modeling confirming RθJA < 0.8°C/W with ≥200 LFM airflow and 2-in² 2-oz copper pour.

Does IRLI3803PBF require a gate resistor for stability?

Yes - a 10 Ω to 22 Ω non-inductive gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. Values below 5 Ω increase risk of oscillation; above 47 Ω degrade switching speed and increase switching loss.

Can IRLI3803PBF be used in avalanche-rated circuits?

No - IRLI3803PBF is not specified for repetitive avalanche operation. Its UIS (unclamped inductive switching) rating is 120 mJ at TC = 25°C, but no guaranteed single-pulse or repetitive avalanche energy is provided in the datasheet.

Is the TO-220 Full-Pak drain tab electrically isolated from the mounting surface?

Yes - the TO-220 Full-Pak construction features an electrically isolated drain tab. The internal die attach is insulated from the metal tab, allowing direct mounting to a grounded heatsink without additional isolation hardware.

IRLI3803PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
5000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
63W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB Full-Pak

IRLI3803PBF FAQ

1.How can I place an order for IRLI3803PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI3803PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI3803PBF reliable?

The price and inventory of IRLI3803PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI3803PBF is usually 5 days.

3.What payment methods are accepted for IRLI3803PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI3803PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI3803PBF?

IRLI3803PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI3803PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI3803PBF?

For technical support, including IRLI3803PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI3803PBF requirements.

6.How does Aetrix verify that IRLI3803PBF is sourced from the original manufacturer or authorized distributors?

All IRLI3803PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI3803PBF meets industry standards.

7.What is the process for return or replacement of IRLI3803PBF?

All IRLI3803PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLI3803PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI3803PBF part is unused and in its original packaging.

Return procedure for IRLI3803PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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