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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLI520NPBF

Name: IRLI520NPBF
Brand: Infineon Technologies
SKU: IRLI520NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI520NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLI520NPBF.pdf

Description:: MOSFET N-CH 100V 8.1A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:3,543

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Product details

Overview

IRLI520NPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 8.1A N-channel logic-level Power MOSFET in TO-220 Full-Pak package, featuring R_DS(on) = 0.18 Ω @ V_GS = 10V, isolated tab with 2.5 kV_RMS voltage isolation, and full avalanche rating. It serves as a high-efficiency, thermally robust switching device in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRLI520NPBF datasheet, IRLI520NPBF pinout, IRLI520NPBF application, or IRLI520NPBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low thermal resistance (R_θJC = 5.0 °C/W), isolated mounting capability, and body diode recovery performance (t_rr = 110–160 ns).

Technical Context

This HEXFET® device uses fifth-generation silicon processing to achieve optimized conduction loss and switching speed trade-offs. Its isolated TO-220 Full-Pak package integrates a high-voltage insulating molding compound (equivalent to 100 µm mica) and enables direct heatsink mounting via single screw or clip without additional insulation hardware.

The MOSFET supports logic-level gate drive (V_GS(th) ≤ 2.0 V), exhibits fast switching (t_d(on) = 40 ns, t_f = 22 ns), and is fully rated for unclamped inductive switching with E_AS = 85 mJ and I_AR = 6.0 A - critical for ruggedized industrial load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum drain-source blocking voltage; defines use in 48V and 72V bus systems with safety margin.
R_DS(on)	0.18 Ω @ V_GS = 10V - Low conduction loss enabling <1.5W dissipation at 6A continuous current.
I_D	8.1 A @ T_C = 25°C - Continuous current rating under ideal heatsinking; derates to 5.7A at 100°C case temperature.
E_AS	85 mJ - Single-pulse avalanche energy rating; ensures reliability during inductive turn-off transients without external snubbers.
R_θJC	5.0 °C/W - Junction-to-case thermal resistance; enables efficient heat transfer to heatsink with minimal thermal interface resistance.
t_rr	110–160 ns - Body diode reverse recovery time; impacts switching loss and EMI in synchronous rectification and H-bridge topologies.
Q_g	20 nC - Total gate charge; determines required gate driver peak current for <100 ns switching transitions.

Pinout & Package

IRLI520NPBF is housed in a TO-220 Full-Pak package with electrically isolated metal tab (2.5 kV_RMS isolation), designed for direct heatsink mounting using a single M3/6-32 screw or clip. The package eliminates need for insulating washers or pads in commercial-industrial applications.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Logic-compatible input (V_GS(th) = 1.0–2.0 V); requires ≤20 nC total charge for full enhancement.
Drain (D)	High-side current path	Connected to power rail or inductive load; electrically isolated from tab; handles 100V blocking and 35A pulsed current.
Source (S)	Reference node / return path	Common connection point for gate drive reference and load return; bonded to isolated tab via internal die attach.

Key Features

Feature	Design Value
Isolated TO-220 Full-Pak	2.5 kV_RMS isolation between tab and leads; replaces mica washers and thermal pads in mounting.
Logic-level gate drive	V_GS(th) max = 2.0 V; compatible with 3.3V/5V microcontrollers without level-shifting circuitry.
Fully avalanche-rated	E_AS = 85 mJ, I_AR = 6.0 A - validated for repetitive unclamped inductive switching per JEDEC JESD24-11.
Low Q_g/Q_gd ratio	Q_gd = 10 nC of total Q_g = 20 nC - improves hard-switching efficiency and reduces Miller-induced shoot-through risk.
Optimized body diode	t_rr = 110–160 ns, Q_rr = 410–620 nC - enables use in freewheeling paths with controlled recovery behavior.

Applications

Motor Drive Inverters

Industrial DC-DC Converters

Use Scenario: Half-bridge leg in 24–48V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side/low-side switching element with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: Logic-level gate enables direct MCU GPIO drive; 0.18 Ω R_DS(on) limits conduction loss to <1W at 6A; avalanche rating withstands back-EMF spikes.

Use Scenario: Primary-side switch in isolated flyback or forward converters for PLC I/O modules and sensor power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 50–200 kHz with unclamped inductive stress during demagnetization.

Use Value: 85 mJ E_AS eliminates need for external clamping; isolated tab simplifies creepage/clearance compliance (4.8 mm sink-to-lead distance).

Power Factor Correction (PFC)

Hot-Swap Controllers

Use Scenario: Boost switch in active PFC stages for industrial AC-DC front-ends (e.g., 110/220VAC input).

IC Role / Device Role / Timing Role: Fast-switching, high-current switch handling line-frequency-modulated duty cycle and high dv/dt stress.

Use Value: 5.0 V/ns peak diode recovery dv/dt rating prevents false turn-on; low C_oss = 97 pF minimizes capacitive switching loss at high frequency.

Use Scenario: Inrush-limiting FET in 12–48V hot-swap cards for telecom and server backplanes.

IC Role / Device Role / Timing Role: Controlled ramp-up switch with body diode providing reverse polarity protection and fault current path.

Use Value: V_GS(th) tolerance allows precise gate voltage control for soft-start; 35A pulsed rating (I_DM) handles surge currents during insertion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF520NPBF	Same die, non-isolated TO-220AB package; no tab isolation; R_θJC = 3.0 °C/W but requires insulator kit.	Lacks 2.5 kV_RMS isolation; unsuitable where creepage/clearance or direct heatsink mounting is required.	Select when cost sensitivity outweighs isolation needs and board layout permits insulated mounting.
STP10NK50ZFP	Zener-protected superjunction MOSFET; V_DSS = 500V, R_DS(on) = 0.58 Ω; higher voltage, lower current, higher R_DS(on).	Targeted at offline SMPS, not 48V industrial switching; incompatible gate drive threshold (2–4 V).	Choose only for higher-voltage, lower-frequency applications where 100V rating is insufficient.

Compared with IRF520NPBF, IRLI520NPBF trades slightly higher R_θJC for critical isolation and simplified mechanical integration; versus STP10NK50ZFP, it delivers 3× lower R_DS(on) and logic-level drive at half the voltage rating - making it optimal for compact, low-voltage, high-reliability industrial switching.

Availability

IRLI520NPBF is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, power factor correction circuits, and hot-swap controllers requiring stable component supply across extended production lifecycles.

Supply support for IRLI520NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRLI520NPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, ruggedized switching in commercial and industrial power conversion where reliability, thermal performance, and ease of mechanical integration are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLI520NPBF supports 5.7 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 Full-Pak package and must be verified against actual PCB layout, heatsink interface, and ambient conditions.

Does the TO-220 Full-Pak package require an insulating washer when mounted to a heatsink?

No - the TO-220 Full-Pak package incorporates high-dielectric-strength molding compound that provides 2.5 kV_RMS isolation between the metal tab and all leads. This eliminates the need for mica washers or silicone pads, enabling direct screw or clip mounting to grounded heatsinks.

Can IRLI520NPBF be driven directly by a 3.3V microcontroller GPIO?

Yes - with a gate threshold voltage range of 1.0–2.0 V and guaranteed enhancement at V_GS = 4.0 V (R_DS(on) ≤ 0.26 Ω), the IRLI520NPBF is fully compatible with 3.3V logic. However, full 10V drive is recommended for minimum R_DS(on) and optimal switching speed.

What is the significance of the "Full-Pak" designation in the part number?

"Full-Pak" refers to Infineon's proprietary TO-220 variant with an electrically isolated metal tab, enhanced creepage distance (4.8 mm), and optimized thermal path. Unlike standard TO-220AB, it integrates isolation into the package mold, removing reliance on external insulators while maintaining mechanical compatibility.

IRLI520NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 8.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRLI520NPBF FAQ

1.How can I place an order for IRLI520NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI520NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI520NPBF reliable?

The price and inventory of IRLI520NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI520NPBF is usually 5 days.

3.What payment methods are accepted for IRLI520NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI520NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI520NPBF?

IRLI520NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI520NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI520NPBF?

For technical support, including IRLI520NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI520NPBF requirements.

6.How does Aetrix verify that IRLI520NPBF is sourced from the original manufacturer or authorized distributors?

All IRLI520NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI520NPBF meets industry standards.

7.What is the process for return or replacement of IRLI520NPBF?

All IRLI520NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLI520NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI520NPBF part is unused and in its original packaging.

Return procedure for IRLI520NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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