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Infineon Technologies IRLI530NPBF
- Part No.:
- IRLI530NPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IRLI530NPBF.pdf
- Description:
- MOSFET N-CH 100V 12A TO220AB FP
- Quantity:
- Payment:
- Shipping:
Inventory:3,464
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Product details
Overview
IRLI530NPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 12A N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak package, featuring RDS(on) = 0.10 Ω @ VGS = 10V, logic-level gate drive (VGS(th) = 1.0–2.0V), and fully avalanche-rated operation. It serves as a high-efficiency, thermally robust switching device in DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the IRLI530NPBF datasheet, IRLI530NPBF pinout, IRLI530NPBF application, or IRLI530NPBF equivalent, key selection criteria include its isolated TO-220 Full-Pak thermal performance (RθJC = 3.7°C/W), 150 mJ single-pulse avalanche energy rating, 5.0 V/ns peak diode recovery dv/dt capability, and compatibility with 5V microcontroller gate drive.
Technical Context
This HEXFET® device employs fifth-generation silicon processing to minimize conduction loss while maintaining fast switching (td(on) = 7.2 ns, tf = 26 ns) and rugged unclamped inductive switching behavior. Its integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.
The TO-220 Full-Pak package provides 2.5 kVRMS isolation between drain tab and leads, 4.8 mm creepage distance, and direct heatsink mounting via single screw or clip-eliminating mica insulators required by standard TO-220 variants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage for use in 48V bus and 100V-class industrial power stages |
| RDS(on) | 0.10 Ω @ VGS = 10V - Enables ≤1.2W conduction loss at 12A continuous current |
| ID (TC = 25°C) | 12 A - Continuous drain current rating under ideal heatsinking conditions |
| EAS | 150 mJ - Avalanche energy handling capacity without failure, critical for inductive load switching |
| Qg | 34 nC - Total gate charge determining driver strength requirement for 100 kHz+ switching |
| RθJC | 3.7 °C/W - Junction-to-case thermal resistance enabling compact heatsink design |
| VGS(th) | 1.0–2.0 V - Logic-level threshold allowing direct drive from 3.3V/5V MCUs without level-shifting |
Pinout & Package
IRLI530NPBF uses the TO-220 Full-Pak package: isolated metal tab (Drain), three leads (Gate, Drain, Source), and molded compound providing 2.5 kVRMS isolation and low thermal resistance to external heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Lead 1) | Gate | Logic-level control input; requires ≤34 nC charge for full turn-on; compatible with 3.3V/5V GPIO |
| D (Tab) | Drain | High-voltage power terminal; electrically isolated from leads; mounted directly to heatsink |
| S (Lead 2) | Source | Power return node; referenced to gate drive ground; carries full load current and body diode reverse recovery charge |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 150 mJ single-pulse EAS enables reliable operation in unclamped inductive switching without snubbers |
| Isolated TO-220 Full-Pak | 2.5 kVRMS isolation and 4.8 mm creepage eliminate need for mica washers and simplify mechanical assembly |
| Logic-level gate drive | VGS(th) = 1.0–2.0 V ensures full enhancement with 3.3V/5V controllers, reducing BOM count |
| Low Qgd/Qg ratio | 20 nC / 34 nC = 59% - improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
| Enhanced diode recovery | trr = 140–210 ns and dv/dt = 5.0 V/ns support stable operation in synchronous rectifier and flyback applications |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver High-Side |
|---|---|
Use Scenario: 48V input, 12V output synchronous buck converter operating at 200 kHz. IC Role / Device Role / Timing Role: Main high-side switching FET controlling power delivery; handles 12A continuous current and 60A pulsed loads. Use Value: 0.10 Ω RDS(on) limits conduction loss to <1.5W; TO-220 Full-Pak's 3.7°C/W RθJC maintains TJ <125°C with minimal heatsink. | Use Scenario: 24V brushed motor drive with PWM speed control and regenerative braking. IC Role / Device Role / Timing Role: High-side switch enabling bidirectional current flow through motor winding and body diode freewheeling. Use Value: 150 mJ EAS withstands inductive kickback during PWM turn-off; 1.3V VSD minimizes freewheeling loss. |
| Industrial AC-DC Auxiliary Supply | LED Driver Constant-Current Switch |
Use Scenario: Off-line auxiliary supply powering control circuitry in 3-phase inverters. IC Role / Device Role / Timing Role: Primary-side switch in flyback topology; operates in discontinuous conduction mode at 65 kHz. Use Value: 5.0 V/ns dv/dt rating prevents false triggering during transformer reset; isolated tab simplifies safety-compliant layout. | Use Scenario: 36V constant-current LED string driver with analog dimming. IC Role / Device Role / Timing Role: Low-side current-regulating switch modulated at 1–10 kHz to set average LED current. Use Value: 0.12 Ω RDS(on) @ VGS = 5V ensures precise current regulation with <5% drift over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF530NPBF | Same die, non-isolated TO-220AB package; no 2.5 kVRMS isolation; RθJC = 3.0°C/W | Requires mica insulator and thermal pad; unsuitable for safety-isolated designs | Select only when isolation is not required and maximum thermal performance is prioritized |
| STP12NK50ZFP | 500V VDSS, 12A, RDS(on) = 0.42 Ω; SuperMESH™ Zener-protected; TO-220FP package | Higher voltage rating but higher on-resistance; lacks avalanche rating and logic-level drive | Prefer for 400V+ systems where voltage margin outweighs conduction loss and gate drive simplicity |
Compared with IRF530NPBF, IRLI530NPBF trades slightly higher RθJC for critical isolation and simplified mounting; versus STP12NK50ZFP, it delivers lower loss and easier gate drive at the cost of voltage headroom-making it optimal for 100V industrial and embedded power stages.
Availability
IRLI530NPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, industrial auxiliary supplies, and LED constant-current drivers requiring stable component supply and long-term manufacturability.
Supply support for IRLI530NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
The IRLI530NPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability industrial switching applications demanding ruggedness, isolation, and logic-level compatibility.
FAQ
Is IRLI530NPBF pin-compatible with standard TO-220 MOSFETs?
No. While lead spacing matches TO-220AB, the IRLI530NPBF uses a Full-Pak variant where the metal tab is internally connected to Drain and electrically isolated from leads. Standard TO-220 parts require external insulation; Full-Pak eliminates that need but mandates verification of heatsink grounding and creepage compliance per IEC 62368-1.
What is the maximum recommended gate resistor for 100 kHz switching?
A 6.0 Ω gate resistor is validated in the datasheet for switching characterization (td(off), tf). For 100 kHz operation with 34 nC Qg, a 4.7–10 Ω resistor balances switching loss, EMI, and driver capability-ensuring ton/toff remain below 100 ns while limiting peak gate current to <2 A.
Can IRLI530NPBF replace IRLI520NPBF in existing designs?
Yes, with validation. Both are logic-level Full-Pak MOSFETs, but IRLI530NPBF has higher VDSS (100V vs. 60V), lower RDS(on) (0.10 Ω vs. 0.27 Ω), and higher ID (12A vs. 9.2A). Thermal and layout changes are unnecessary, but ensure system voltage does not exceed 100V and gate drive remains within ±16V.
Does the body diode support continuous reverse conduction?
Yes. The integral p-n junction body diode is rated for 12A continuous source current (IS) and 60A pulsed (ISM). At TJ = 25°C, VSD = 1.3V, and trr = 140–210 ns. For sustained reverse conduction, ensure junction temperature stays within –55°C to +175°C and limit di/dt per datasheet constraints (≤540 A/µs).
IRLI530NPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 41W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB Full-Pak
IRLI530NPBF FAQ
1.How can I place an order for IRLI530NPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLI530NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLI530NPBF reliable?
The price and inventory of IRLI530NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI530NPBF is usually 5 days.
3.What payment methods are accepted for IRLI530NPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI530NPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLI530NPBF?
IRLI530NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLI530NPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLI530NPBF?
For technical support, including IRLI530NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI530NPBF requirements.
6.How does Aetrix verify that IRLI530NPBF is sourced from the original manufacturer or authorized distributors?
All IRLI530NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI530NPBF meets industry standards.
7.What is the process for return or replacement of IRLI530NPBF?
All IRLI530NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLI530NPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLI530NPBF part is unused and in its original packaging.
Return procedure for IRLI530NPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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