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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLIB9343

Name: IRLIB9343
Brand: Infineon Technologies
SKU: IRLIB9343
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLIB9343

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLIB9343.pdf

Description:: MOSFET P-CH 55V 14A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLIB9343 from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-220 Full-Pak package, rated for -55 V V_DS, 93 mΩ R_DS(on) @ V_GS = -10 V, and 175 °C maximum junction temperature. It delivers -14 A continuous drain current at 25 °C and is engineered specifically for high-efficiency, low-THD Class-D audio amplifier output stages.

For engineers reviewing the IRLIB9343 datasheet, IRLIB9343 pinout, IRLIB9343 application, or IRLIB9343 equivalent, key selection criteria include its optimized gate charge (31 nC), low reverse recovery charge (120–180 nC), and rugged repetitive avalanche capability-critical for unclamped inductive switching in audio H-bridge outputs.

Technical Context

This MOSFET employs Infineon's advanced trench process to minimize R_DS(on) per die area while tightly controlling Q_g (31 nC), Q_gd (8.5 nC), and Q_rr (120–180 nC). Its body diode exhibits 57–86 ns trr and -1.2 V V_SD at -14 A, enabling fast, low-loss freewheeling in half-bridge configurations.

The device features a 175 °C T_J(max), 3.84 °C/W R_θJC, and validated repetitive avalanche performance up to 190 mJ (single-pulse) and 100 mJ (repetitive at 1% duty cycle), supporting robust operation under transient overloads without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-55 V - Withstands full rail-to-rail voltage swing in ±28 V Class-D amplifier supplies.
R_DS(on) @ V_GS = -10 V	93 mΩ typ. - Enables <1 W conduction loss at 14 A output, critical for thermal management in compact enclosures.
Q_g	31 nC typ. - Reduces gate drive power and switching transition time, directly lowering THD in audio band.
Q_rr	120–180 nC - Minimizes diode-induced distortion and EMI during dead-time commutation in H-bridges.
T_J(max)	175 °C - Supports sustained operation in sealed audio amplifiers with limited airflow and high ambient temperatures.
R_θJC	3.84 °C/W - Enables direct heatsink mounting with predictable thermal path for accurate junction temperature estimation.
I_D @ T_C = 25 °C	-14 A - Sustains peak output current for 100 W+ Class-D channels without derating at board-level case temps.

Pinout & Package

IRLIB9343 is housed in a TO-220 Full-Pak package with isolated tab (drain-connected), standard 3-pin through-hole layout, and lead-free (PbF) finish. The package provides low-inductance internal connections (L_D = 4.5 nH, L_S = 7.5 nH) and supports 10 lb·in mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input terminal	Accepts -10 V logic-level drive; threshold voltage -1.0 V ensures turn-on with standard audio driver ICs.
D (Drain)	Main current-carrying terminal (connected to tab)	Tab is electrically connected to drain-requires insulated mounting hardware when heatsink is grounded.
S (Source)	Reference node for gate drive and current return	Serves as local ground reference for gate driver; low-inductance source bond minimizes ringing in fast-switching audio paths.

Key Features

Feature	Design Value
Optimized for Class-D audio	Q_g, Q_rr, and R_DS(on) jointly tuned to reduce THD+N below 0.01% at 1 kHz and suppress EMI above 1 MHz.
Repetitive avalanche rated	Validated for ≥100 mJ repetitive avalanche energy at 1% duty cycle-eliminates need for external clamping in speaker protection circuits.
175 °C junction rating	Enables reliable operation in thermally constrained enclosures (e.g., powered subwoofers) without forced air cooling.
Low internal inductance	L_D = 4.5 nH, L_S = 7.5 nH-reduces voltage overshoot and oscillation during 100+ V/µs switching transitions.

Applications

Home Audio Amplifiers

Automotive Subwoofer Modules

Use Scenario: High-power stereo receiver output stage delivering 150 W/channel into 4 Ω loads.

IC Role / Device Role: Low-side switch in complementary P/N-channel H-bridge output stage.

Use Value: 93 mΩ R_DS(on) and 31 nC Q_g enable >92% efficiency at full power, reducing heatsink mass by 35% vs. legacy MOSFETs.

Use Scenario: Sealed active subwoofer with integrated 300 W Class-D amplifier driving 2×4 Ω voice coils.

IC Role / Device Role: High-side P-channel switch in dual-H-bridge configuration for differential BTL output.

Use Value: 175 °C T_J(max) and 100 mJ repetitive avalanche rating ensure survival during short-circuit events without shutdown.

Professional PA System Outputs

USB-C Powered Portable Speakers

Use Scenario: 500 W touring-grade line array module with digital signal processing and real-time thermal monitoring.

IC Role / Device Role: Output switch in multi-level (3-level) Class-D topology for reduced EMI and improved power density.

Use Value: 57–86 ns trr and 72 pF Crss minimize shoot-through risk and enable stable 500 kHz switching with minimal gate drive complexity.

Use Scenario: Compact 20 W Bluetooth speaker powered from USB-C PD (5–20 V) with battery backup.

IC Role / Device Role: Single-ended output switch in buck-derived Class-D stage operating from variable input voltage.

Use Value: R_DS(on) = 150 mΩ @ V_GS = -4.5 V ensures efficient operation down to 5 V supply, extending battery runtime by 18%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	R_DS(on) = 200 mΩ @ -10 V; Q_g = 65 nC; no specified Q_rr or avalanche rating	Lacks Class-D optimization-higher THD and EMI in >200 kHz switching; suitable only for <100 kHz linear or quasi-resonant designs	Select only if cost sensitivity outweighs audio fidelity and thermal constraints.
IPB90N03S4-04	N-channel, 30 V, 4.0 mΩ R_DS(on); requires high-side gate driver; no body diode optimization	Requires floating gate drive and external freewheeling diodes; increases BOM count and layout complexity in H-bridge	Preferable only in new N-channel-centric designs with integrated high-side drivers and strict R_DS(on) targets.

Compared with IRF9540NPbF and IPB90N03S4-04, IRLIB9343 uniquely balances low R_DS(on), low Q_rr, and rugged avalanche behavior in a single P-channel device-enabling simpler, cooler, and lower-THD Class-D outputs without gate driver overhead or external clamping.

Availability

IRLIB9343 is available at Aetrix Electronics and suitable for home audio amplifiers, automotive subwoofer modules, and professional PA system outputs requiring stable component supply across extended production lifecycles.

Supply support for IRLIB9343 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's HEXFET® Power MOSFET product line, designed explicitly for high-frequency, high-efficiency switching in audio, motor control, and DC-DC conversion applications where thermal robustness and dynamic performance are critical.

FAQ

Is IRLIB9343 suitable for synchronous rectification in DC-DC converters?

No-IRLIB9343 is optimized for Class-D audio switching, not synchronous rectification. Its body diode reverse recovery (trr = 57–86 ns) and Q_rr (120–180 nC) are tuned for audio H-bridge freewheeling, not high-frequency buck converter secondary-side conduction. For synchronous rectification, Infineon's OptiMOS™ or StrongIRFET™ series offer lower Q_rr and faster trr.

What is the maximum safe gate-source voltage during transient conditions?

The absolute maximum V_GS is ±20 V per datasheet. During fast switching, gate ringing must be suppressed to stay within this limit-designs should use gate resistors ≤10 Ω and low-inductance PCB layout. Exceeding ±20 V risks permanent gate oxide damage, even for sub-microsecond transients.

Does IRLIB9343 require a negative gate drive voltage to achieve full R_DS(on)?

Yes-full on-resistance specification (93 mΩ) is guaranteed only at V_GS = -10 V. At -4.5 V, R_DS(on) rises to 150 mΩ. Gate drive must provide stable negative voltage relative to source; level-shifting or isolated gate drivers are required in high-side configurations.

Can IRLIB9343 be used in parallel with identical units for higher current handling?

Yes-its negative temperature coefficient of R_DS(on) (see Fig. 4) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking. Derate total current by 15% to account for thermal coupling and parameter spread.

IRLIB9343 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 660 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRLIB9343 FAQ

1.How can I place an order for IRLIB9343 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLIB9343 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLIB9343 reliable?

The price and inventory of IRLIB9343 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLIB9343 is usually 5 days.

3.What payment methods are accepted for IRLIB9343?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLIB9343 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLIB9343?

IRLIB9343 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLIB9343 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLIB9343?

For technical support, including IRLIB9343 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLIB9343 requirements.

6.How does Aetrix verify that IRLIB9343 is sourced from the original manufacturer or authorized distributors?

All IRLIB9343 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLIB9343 meets industry standards.

7.What is the process for return or replacement of IRLIB9343?

All IRLIB9343 units undergo pre-shipment inspection (PSI). If there is an issue with IRLIB9343, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLIB9343 part is unused and in its original packaging.

Return procedure for IRLIB9343:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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