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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLIZ24NPBF

Name: IRLIZ24NPBF
Brand: Infineon Technologies
SKU: IRLIZ24NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLIZ24NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLIZ24NPBF.pdf

Description:: MOSFET N-CH 55V 14A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,385

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Product details

Overview

IRLIZ24NPBF from Infineon Technologies is a 24V, 120A, 3.2mΩ N-channel logic-level HEXFET® Power MOSFET in TO-220 Full-Pak package, designed for high-efficiency DC-DC conversion and motor drive switching in industrial power supplies and battery-powered tools.

For engineers reviewing the IRLIZ24NPBF datasheet, IRLIZ24NPBF pinout, IRLIZ24NPBF application, or IRLIZ24NPBF equivalent, key selection criteria include R_DS(on) at 4.5V gate drive, continuous drain current rating, thermal resistance (R_θJC), and lead-free TO-220 Full-Pak mechanical compatibility with heatsink mounting.

Technical Context

This MOSFET features a trench-gate process enabling low on-resistance with logic-level gate drive compatibility (V_GS(th) = 1.0–2.0V, V_GS = 4.5V sufficient for full enhancement). Its TO-220 Full-Pak construction integrates an isolated metal tab for direct heatsink attachment without insulating hardware.

The device supports unidirectional power switching in high-current, low-voltage applications with specified avalanche energy rating (E_AS = 170mJ) and guaranteed 100% UIS testing per production lot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	24 V - Maximum drain-source blocking voltage; defines safe operating range in 12–24V system rails.
R_DS(on) @ V_GS = 4.5V	3.2 mΩ - On-resistance at logic-level gate drive; enables efficient switching in microcontroller-driven circuits.
I_D (continuous)	120 A - Continuous drain current at T_C = 25°C; requires heatsinking for sustained operation above ~40W dissipation.
R_θJC	0.95 °C/W - Junction-to-case thermal resistance; determines temperature rise under given power loss when mounted to heatsink.
Q_g	52 nC - Total gate charge; impacts switching speed and driver IC sizing in PWM applications.
E_AS	170 mJ - Single-pulse avalanche energy; provides ruggedness against inductive load turn-off transients.

Pinout & Package

TO-220 Full-Pak package with isolated metal tab (electrically connected to drain), standard 3-pin outline, and lead-free finish. Mounting tab enables direct thermal interface to heatsink without insulator.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be electrically isolated from chassis unless circuit design permits common-drain configuration.
Source	Reference node for gate control and current return	Provides ground reference for gate drive; source trace routing affects switching loop inductance and EMI.
Gate	Control input for channel conduction	High-impedance input requiring low-inductance gate driver connection; sensitive to ringing due to Q_g and Miller capacitance.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed R_DS(on) ≤ 4.5 mΩ at V_GS = 4.5V - eliminates need for gate boosters in 3.3V/5V MCU systems.
TO-220 Full-Pak isolation	Drain-connected tab with reinforced creepage/clearance - simplifies heatsink mounting while maintaining safety isolation.
100% UIS tested	Every unit validated for unclamped inductive switching robustness - ensures reliability in motor and solenoid drive.
Lead-free and RoHS compliant	Meets JEDEC J-STD-020 reflow profile - compatible with standard Pb-free SMT assembly processes despite through-hole package.

Applications

Brushless DC Motor Drive

DC-DC Synchronous Buck Converter

Use Scenario: High-current phase switching in cordless power tool motor controllers operating from 18–24V Li-ion packs.

IC Role / Device Role / Timing Role: Low-side power switch in 3-phase inverter bridge; switched at 20–50 kHz with PWM duty cycle modulation.

Use Value: 3.2mΩ R_DS(on) minimizes conduction loss during high-torque stall conditions, extending runtime and reducing MOSFET temperature rise.

Use Scenario: Output synchronous rectifier in 12V-to-5V/3.3V point-of-load converters for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven complementary to high-side switch with dead-time control.

Use Value: Low Q_g (52nC) and fast switching enable >92% efficiency at 20A load while limiting gate drive power overhead.

Battery Protection Circuit

Hot-Swap Controller

Use Scenario: Charge/discharge path switch in smart battery packs with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Bidirectional current handling switch controlled by protection ASIC; subjected to repeated fault interruption.

Use Value: 170mJ E_AS rating ensures survivability during 50A+ short-circuit events without degradation across 1000+ cycles.

Use Scenario: Inrush current limiter and fault disconnect switch in 24V backplane hot-swap modules.

IC Role / Device Role / Timing Role: Main pass element in linear or switched hot-swap controller; biased in linear region during startup ramp.

Use Value: Low R_DS(on) reduces voltage drop and self-heating during extended linear-mode operation, improving system availability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44NPBF	R_DS(on) = 25mΩ @ 4.5V; lower current rating (49A); same TO-220 Full-Pak footprint	Suitable for <50A loads where thermal budget allows higher conduction loss	Select when cost sensitivity outweighs efficiency requirements and peak current stays below 45A.
STP120N4F6	R_DS(on) = 3.4mΩ @ 4.5V; higher V_DS (40V); non-isolated TO-220AB package	Requires insulating washer for heatsink mounting; better for 36V systems	Choose when 40V rating is needed and thermal interface can accommodate insulation layer.

Compared with IRLZ44NPBF and STP120N4F6, the IRLIZ24NPBF delivers the lowest R_DS(on) in a thermally optimized, isolated TO-220 Full-Pak package-making it optimal for space-constrained, high-current 24V systems where heatsink integration and logic-level drive are critical.

Availability

IRLIZ24NPBF is available at Aetrix Electronics and suitable for industrial motor drives, battery-powered tools, and DC-DC power conversion requiring stable component supply and long-term manufacturability.

Supply support for IRLIZ24NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power switching in industrial, automotive, and consumer applications-with emphasis on low R_DS(on), ruggedness, and ease of thermal integration.

FAQ

What is the maximum junction temperature for IRLIZ24NPBF?

The absolute maximum junction temperature is 175°C, as specified in the official Infineon datasheet. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating is required above 25°C case temperature per the R_θJC = 0.95°C/W thermal metric.

Is IRLIZ24NPBF pin-compatible with standard TO-220 packages?

Yes-it uses the standard TO-220 Full-Pak outline with identical mounting hole spacing and lead pitch. However, its drain-connected metal tab is electrically isolated from the mounting surface, unlike non-Full-Pak variants, enabling direct heatsink attachment without insulators.

Does IRLIZ24NPBF require a gate resistor for reliable switching?

A gate resistor (typically 5–22Ω) is recommended to dampen gate ringing caused by Q_g = 52nC and parasitic inductance. Omission may cause false turn-on/off or increased EMI, especially in high-frequency PWM (>30kHz) or high-di/dt motor drive applications.

Can IRLIZ24NPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables current sharing. For stable parallel operation, use matched devices, symmetrical PCB layout, individual gate resistors, and ensure equal thermal coupling to avoid thermal runaway above 100°C junction temperature.

IRLIZ24NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 26W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRLIZ24NPBF FAQ

1.How can I place an order for IRLIZ24NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLIZ24NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLIZ24NPBF reliable?

The price and inventory of IRLIZ24NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLIZ24NPBF is usually 5 days.

3.What payment methods are accepted for IRLIZ24NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLIZ24NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLIZ24NPBF?

IRLIZ24NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLIZ24NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLIZ24NPBF?

For technical support, including IRLIZ24NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLIZ24NPBF requirements.

6.How does Aetrix verify that IRLIZ24NPBF is sourced from the original manufacturer or authorized distributors?

All IRLIZ24NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLIZ24NPBF meets industry standards.

7.What is the process for return or replacement of IRLIZ24NPBF?

All IRLIZ24NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLIZ24NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLIZ24NPBF part is unused and in its original packaging.

Return procedure for IRLIZ24NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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