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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLIZ34N

Name: IRLIZ34N
Brand: Infineon Technologies
SKU: IRLIZ34N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLIZ34N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLIZ34N.pdf

Description:: MOSFET N-CH 55V 22A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLIZ34N from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak package, rated for 55 V V_DS, 22 A continuous drain current at 25°C, and 0.035 Ω R_DS(on) at V_GS = 10 V. It integrates an optimized body diode with 1.3 V forward voltage and 76 ns reverse recovery time, and features isolated mounting for direct heatsink attachment without mica insulator - widely deployed in DC-DC synchronous buck converters, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRLIZ34N datasheet, IRLIZ34N pinout, IRLIZ34N application, or IRLIZ34N equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), 2.5 kV_RMS isolation rating, avalanche energy rating (110 mJ), thermal resistance (R_θJC = 4.1 °C/W), and TO-220 Full-Pak mechanical mounting configuration.

Technical Context

This HEXFET® device employs fifth-generation silicon processing to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 25 nC, Q_gd = 14 nC) supports fast turn-on/turn-off transitions (t_d(on) = 8.9 ns, t_f = 21 ns) under 5 V logic-level drive, enabling high-efficiency operation in hard-switched topologies.

The integrated source-drain diode exhibits controlled reverse recovery (Q_rr = 190–290 nC, t_rr = 76–110 ns) and dv/dt immunity up to 5.0 V/ns, reducing switching losses and EMI in synchronous rectification and freewheeling applications. The TO-220 Full-Pak package provides 4.8 mm creepage distance and 2.5 kV_RMS isolation between tab and leads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche; sets upper limit for input bus in 48 V systems.
R_DS(on) @ V_GS = 10 V	0.035 Ω - Enables <1 W conduction loss at 12 A, critical for thermally constrained PCB layouts.
I_D (continuous, T_C = 25°C)	22 A - Sustained current capability with external heatsink; derates to 15 A at 100°C case temperature.
Q_g	25 nC - Total gate charge determines driver strength requirement; compatible with standard logic-level gate drivers.
E_AS	110 mJ - Single-pulse avalanche energy rating confirms robustness against inductive load transients.
R_θJC	4.1 °C/W - Low junction-to-case thermal resistance enables efficient heat transfer to heatsink without thermal interface pads.
V_GS(th)	1.0–2.0 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs.

Pinout & Package

IRLIZ34N uses the TO-220 Full-Pak package: insulated metal tab (drain-connected), three leads (Gate, Drain, Source), and 4.8 mm creepage distance. Mounting requires single screw (6-32 or M3, 1.1 N·m torque) or clip; no additional insulator needed due to 2.5 kV_RMS isolation.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Logic-level input (1–2 V threshold); accepts 0–10 V drive; 100 nA leakage at ±16 V.
Drain (D)	High-side current path	Internally connected to metal tab; serves as primary heat dissipation path and high-voltage node.
Source (S)	Reference node / return path	Low-impedance return for load current; ties to ground or low-side switch in half-bridge configurations.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V controllers - eliminates need for level-shifting or gate driver ICs in low-voltage systems.
Isolated TO-220 Full-Pak	2.5 kV_RMS isolation and 4.8 mm creepage enable direct heatsink mounting without mica or silicone pads - reduces assembly cost and thermal resistance.
Fast body diode	76 ns t_rr and 190 nC Q_rr support synchronous rectification in buck converters without external Schottky diodes.
Full avalanche rating	110 mJ E_AS and 16 A I_AR validated per JEDEC JESD24-1 - ensures reliability in unclamped inductive switching events.

Applications

DC-DC Synchronous Buck Converter

Brushed DC Motor Half-Bridge

Use Scenario: High-efficiency 12 V to 3.3 V point-of-load conversion in telecom and networking equipment.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, commutating during PWM off-time with body diode conduction and active conduction phases.

Use Value: 0.035 Ω R_DS(on) minimizes conduction loss; 25 nC Q_g enables clean 500 kHz switching with minimal driver overhead.

Use Scenario: Bidirectional 24 V brushed motor control in factory automation actuators.

IC Role / Device Role / Timing Role: High-side or low-side switch in H-bridge topology, driven by PWM signals from MCU GPIOs.

Use Value: Logic-level V_GS(th) allows direct 3.3 V/5 V drive; 110 mJ avalanche rating absorbs back-EMF spikes during abrupt direction reversal.

Industrial AC-DC Power Supply

LED Driver Secondary-Side Switch

Use Scenario: Active clamp or synchronous rectification in 100–200 W offline flyback or LLC resonant converters.

IC Role / Device Role / Timing Role: Secondary-side power switch conducting during transformer reset or output rectification phase.

Use Value: 2.5 kV_RMS isolation and 4.8 mm creepage meet reinforced insulation requirements for Class II designs without extra barriers.

Use Scenario: Constant-current switching regulator for high-brightness LED strings in street lighting.

IC Role / Device Role / Timing Role: Series-pass switch modulating LED current via PWM dimming or analog current regulation.

Use Value: Low R_DS(on) reduces thermal load on heatsink; 1.3 V V_SD body diode limits forward drop during dimming transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ34NPbF	Higher R_DS(on) (0.045 Ω @ 10 V), non-isolated TO-220AB, no creepage/isolation rating	Requires external insulator for heatsink mounting; unsuitable for reinforced insulation designs	Select only when isolation and creepage are not required and thermal margin permits higher conduction loss.
STP36NF20	200 V V_DS, 36 A I_D, 0.055 Ω R_DS(on), non-logic-level (V_GS(th) = 2–4 V), TO-220	Needs 10 V gate drive; higher voltage rating trades off on-resistance and gate charge (Q_g = 55 nC)	Prefer for 100–200 V bus applications where logic-level drive is not mandatory and higher avalanche energy (420 mJ) is needed.

Compared with IRFZ34NPbF, IRLIZ34N offers lower R_DS(on), integrated isolation, and true logic-level drive - making it superior for compact, safety-compliant, low-voltage power stages. Against STP36NF20, it sacrifices voltage headroom for significantly better efficiency and drive simplicity in ≤60 V systems.

Availability

IRLIZ34N is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing of discrete power semiconductors.

Supply support for IRLIZ34N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device design.

The HEXFET® Power MOSFET product line - now part of Infineon's OptiMOS™ legacy portfolio - was engineered for high-efficiency, high-reliability switching in commercial and industrial power conversion, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRLIZ34N RoHS-compliant and lead-free?

Yes, IRLIZ34N is RoHS-compliant and lead-free, as indicated by the "PbF" suffix in its orderable part number (IRLIZ34NPbF). It meets EU Directive 2011/65/EU and IPC/JEDEC J-STD-609B Class 1 marking requirements, with tin-plated leads and halogen-free molding compound.

Can IRLIZ34N be used in surface-mount designs?

No - the TO-220 Full-Pak package is explicitly not recommended for surface-mount applications per manufacturer documentation. Its mechanical structure, tab geometry, and thermal path are designed for through-hole mounting and direct heatsink attachment using screws or clips.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is 15 A (per Absolute Maximum Ratings table), and the SOA is limited by R_DS(on) at pulse widths >1 ms. For 100 µs pulses, the device supports up to ~40 A with V_DS ≤ 20 V, as confirmed by Figure 8's SOA curves.

Does IRLIZ34N require a gate resistor for stability in switching applications?

Yes - a gate resistor (typically 6.5 Ω, per datasheet switching test conditions) is recommended to dampen ringing, control dV/dt, and prevent spurious turn-on from Miller coupling. Values between 4.7 Ω and 10 Ω balance switching speed and EMI suppression for most 100–500 kHz applications.

IRLIZ34N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IRLIZ34N FAQ

1.How can I place an order for IRLIZ34N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLIZ34N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLIZ34N reliable?

The price and inventory of IRLIZ34N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLIZ34N is usually 5 days.

3.What payment methods are accepted for IRLIZ34N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLIZ34N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLIZ34N?

IRLIZ34N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLIZ34N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLIZ34N?

For technical support, including IRLIZ34N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLIZ34N requirements.

6.How does Aetrix verify that IRLIZ34N is sourced from the original manufacturer or authorized distributors?

All IRLIZ34N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLIZ34N meets industry standards.

7.What is the process for return or replacement of IRLIZ34N?

All IRLIZ34N units undergo pre-shipment inspection (PSI). If there is an issue with IRLIZ34N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLIZ34N part is unused and in its original packaging.

Return procedure for IRLIZ34N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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