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Infineon Technologies IRLIZ34NPBF
- Part No.:
- IRLIZ34NPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IRLIZ34NPBF.pdf
- Description:
- MOSFET N-CH 55V 22A TO220AB FP
- Quantity:
- Payment:
- Shipping:
Inventory:2,129
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Product details
Overview
IRLIZ34NPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak package, rated for 55 V VDS, 22 A continuous drain current at 25°C, and 0.035 Ω RDS(on) at VGS = 10 V. It integrates a rugged body diode with 1.3 V forward voltage and is fully avalanche-rated for unclamped inductive switching in DC motor drives and power supplies.
For engineers reviewing the IRLIZ34NPBF datasheet, IRLIZ34NPBF pinout, IRLIZ34NPBF application, or IRLIZ34NPBF equivalent, key selection criteria include its isolated TO-220 Full-Pak thermal performance (RθJC = 4.1 °C/W), gate threshold of 1.0–2.0 V enabling direct microcontroller drive, and 110 mJ single-pulse avalanche energy rating under defined test conditions.
Technical Context
This HEXFET device uses fifth-generation silicon processing to achieve low on-resistance per die area while maintaining fast switching (tr = 100 ns, tf = 21 ns) and robust dv/dt immunity (5.0 V/ns). Its isolated package provides 2.5 kVRMS voltage isolation and 4.8 mm creepage between sink and leads.
The device operates across –55°C to +175°C junction temperature range, supports logic-level gate drive down to 4.0 V (RDS(on) = 0.060 Ω), and features fully characterized reverse recovery (Qrr = 190–290 nC, trr = 76–110 ns) for synchronous rectification and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V nominal bus systems. |
| RDS(on) @ VGS = 10 V | 0.035 Ω - Enables <1 W conduction loss at 12 A, critical for high-efficiency DC-DC stages. |
| ID (continuous, TC = 25°C) | 22 A - Sustained current capability with heatsink; derates to 15 A at 100°C case temperature. |
| EAS | 110 mJ - Single-pulse avalanche energy at VDD = 25 V, defines safe inductive turn-off margin. |
| Qg | 25 nC - Total gate charge determines driver strength requirement for 100 ns rise time. |
| tr/tf | 100 ns / 21 ns - Fast switching enables >100 kHz operation with minimized switching losses. |
| VSD | 1.3 V @ IS = 12 A - Body diode forward voltage impacts freewheeling loss in buck converters. |
Pinout & Package
IRLIZ34NPBF uses the TO-220 Full-Pak package: electrically isolated metal tab (heat sink interface), molded compound providing 2.5 kVRMS isolation, and 4.8 mm creepage distance between tab and leads. Mounting requires one screw or clip; no additional insulator needed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Logic-level control input; threshold 1.0–2.0 V enables direct drive from 3.3 V/5 V MCUs. |
| D | Drain | Main high-side or low-side power path terminal; connects to load/bus; rated for 55 V blocking. |
| S | Source | Power return and reference node; also serves as body diode anode for freewheeling current. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 Full-Pak | Eliminates need for mica washers or silicone pads-reduces thermal resistance (RθJC = 4.1 °C/W) and assembly steps. |
| Fully Avalanche Rated | Guarantees survivability under unclamped inductive switching up to 110 mJ, verified per JEDEC JESD24-11. |
| Logic-Level Gate Drive | Operates fully enhanced at VGS ≥ 4.0 V, compatible with standard GPIO without level-shifting circuitry. |
| Low Qgd/Qgs Ratio | Qgd = 14 nC vs. Qgs = 5.2 nC - improves hard-switching EMI behavior and Miller immunity. |
| High dv/dt Immunity | Rated for 5.0 V/ns peak diode recovery dv/dt - prevents spurious turn-on in high-noise bridge configurations. |
Applications
| Brushed DC Motor Control | DC-DC Synchronous Buck Converter |
|---|---|
|
Use Scenario: H-bridge driver for 24–48 V industrial actuators requiring bidirectional torque and regenerative braking. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheel current during PWM off-time. Use Value: 0.035 Ω RDS(on) limits I²R loss to ≤ 6 W at 12 A, enabling compact heatsink design in enclosed enclosures. |
Use Scenario: High-current step-down regulator for FPGA core voltage (e.g., 12 V → 1.2 V @ 20 A). IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%. Use Value: 1.3 V VSD and 290 nC Qrr enable lower average diode loss than discrete 40 V Schottky alternatives at 500 kHz switching. |
| Uninterruptible Power Supply (UPS) Inverter | Industrial Solid-State Relay (SSR) |
|
Use Scenario: Half-bridge output stage converting 350 V DC bus to 230 V AC line-frequency waveform. IC Role / Device Role / Timing Role: High-side switch subjected to rapid dv/dt transitions during complementary switching. Use Value: 5.0 V/ns dv/dt rating and isolated package prevent false triggering and ensure reliable commutation at 50/60 Hz. |
Use Scenario: Replacement for electromechanical relays in PLC output modules controlling 24–48 V DC loads. IC Role / Device Role / Timing Role: Main power switch with galvanic isolation between control logic and load circuit. Use Value: 2.5 kVRMS isolation and 4.8 mm creepage meet IEC 61000-4-5 surge immunity requirements for industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ44NPBF | VDS = 55 V, RDS(on) = 0.028 Ω @ 10 V, but VGS(th) = 2.0–4.0 V - not logic-level. | Requires gate driver with ≥10 V supply; unsuitable for direct 3.3 V MCU interface. | Select when higher current density is prioritized and gate drive voltage is ≥10 V. |
| STP55NF06L | VDS = 60 V, RDS(on) = 0.018 Ω @ 10 V, VGS(th) = 1.0–2.5 V - logic-level, but TO-220 non-isolated. | Lacks 2.5 kV isolation; requires external insulator for heatsink mounting. | Select when isolation is unnecessary and lowest RDS(on) is critical for thermal budget. |
Compared with IRLIZ34NPBF, IRFZ44NPBF offers lower on-resistance but demands higher gate voltage, while STP55NF06L delivers superior conduction efficiency at the cost of added insulation complexity and reduced system-level isolation safety margin.
Availability
IRLIZ34NPBF is available at Aetrix Electronics and suitable for brushed DC motor control, DC-DC synchronous buck converters, UPS inverters, and industrial solid-state relays requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRLIZ34NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture, qualify, and support the HEXFET® Power MOSFET product line with full automotive and industrial reliability standards.
The IRLIZ34NPBF belongs to the logic-level HEXFET family designed specifically for high-efficiency, isolated-switching applications in industrial power conversion, motor control, and solid-state relay replacement where gate drive simplicity and thermal robustness are essential.
FAQ
Is IRLIZ34NPBF RoHS-compliant and lead-free?
Yes, IRLIZ34NPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU. The "PbF" suffix explicitly denotes lead-free packaging. All plating, molding compounds, and internal metallization meet JEDEC J-STD-609 Category 3 moisture sensitivity and halogen-free requirements.
Can IRLIZ34NPBF be used in surface-mount designs?
No - the TO-220 Full-Pak package is through-hole only. The datasheet explicitly states "TO-220AB Full-Pak packages are not recommended for Surface Mount Application." Thermal and mechanical integrity require rigid PCB mounting with screw or clip to an external heatsink.
What is the maximum allowable gate-to-source voltage?
The absolute maximum VGS is ±16 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤15 V using Zener diodes or active drivers, especially in noisy industrial environments with transient coupling.
Does the body diode support continuous reverse conduction?
Yes - the integral p-n junction body diode is rated for continuous source current (IS) of 22 A at TC = 25°C and pulsed source current (ISM) of 110 A. Its VSD = 1.3 V at 12 A and trr = 76–110 ns are fully characterized for synchronous rectification use cases.
IRLIZ34NPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 880 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 37W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB Full-Pak
IRLIZ34NPBF FAQ
1.How can I place an order for IRLIZ34NPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLIZ34NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLIZ34NPBF reliable?
The price and inventory of IRLIZ34NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLIZ34NPBF is usually 5 days.
3.What payment methods are accepted for IRLIZ34NPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLIZ34NPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLIZ34NPBF?
IRLIZ34NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLIZ34NPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLIZ34NPBF?
For technical support, including IRLIZ34NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLIZ34NPBF requirements.
6.How does Aetrix verify that IRLIZ34NPBF is sourced from the original manufacturer or authorized distributors?
All IRLIZ34NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLIZ34NPBF meets industry standards.
7.What is the process for return or replacement of IRLIZ34NPBF?
All IRLIZ34NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLIZ34NPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLIZ34NPBF part is unused and in its original packaging.
Return procedure for IRLIZ34NPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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