Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLL014NPBF

Name: IRLL014NPBF
Brand: Infineon Technologies
SKU: IRLL014NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLL014NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRLL014NPBF.pdf

Description:: MOSFET N-CH 55V 2A SOT223

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,206

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLL014NPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 2.8 A N-channel enhancement-mode MOSFET in SOT-223 package, with R_DS(on) = 0.28 Ω at V_GS = 10 V and 0.35 Ω at V_GS = 4.5 V, rated for continuous drain current up to 2.8 A at T_C = 25 °C and 1.7 A at T_C = 100 °C, used in low-voltage DC-DC converter synchronous rectification and load switching.

For engineers reviewing the IRLL014NPBF datasheet, IRLL014NPBF pinout, IRLL014NPBF application, or IRLL014NPBF equivalent, key selection criteria include gate threshold voltage (V_GS(th) = 1.0–2.5 V), avalanche energy rating (E_AS = 25 mJ), thermal resistance (R_θJC = 50 °C/W), SOA compliance at 100 µs pulse width, and body diode reverse recovery characteristics (t_rr ≈ 45 ns).

Technical Context

This MOSFET employs planar HEXFET® technology optimized for low gate charge (Q_G = 6.5 nC typical) and fast switching (t_d(on) = 10 ns, t_r = 15 ns, t_d(off) = 25 ns, t_f = 10 ns at V_GS = 10 V, R_G = 2.5 Ω). It features an integrated body diode with forward voltage V_SD = 1.2 V at I_S = 2.0 A and reverse recovery time t_rr = 45 ns.

The device operates within a junction temperature range of –55 °C to +175 °C, supports 100% UIS (unclamped inductive switching) testing per JEDEC JESD24-1, and exhibits normalized R_DS(on) variation ≤ 1.2× from 25 °C to 150 °C - critical for stable conduction loss across thermal operating envelopes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage before avalanche breakdown; defines safe operation in 48 V rail and PoE-powered systems.
R_DS(on) @ V_GS = 10 V	0.28 Ω - conduction loss of 0.78 W at 1.67 A; enables high-efficiency synchronous rectification in buck converters.
R_DS(on) @ V_GS = 4.5 V	0.35 Ω - ensures usable on-resistance with logic-level gate drive from 3.3 V or 5 V microcontrollers.
I_D (continuous, T_C = 25 °C)	2.8 A - maximum steady-state current with heatsink; supports compact load switches in industrial I/O modules.
Q_G	6.5 nC - low total gate charge reduces driver power and enables >1 MHz switching in SMPS designs.
E_AS	25 mJ - unclamped inductive switching energy rating; validates robustness against inductive kickback in relay/motor drivers.
t_rr	45 ns - fast body diode recovery minimizes cross-conduction losses in synchronous buck topologies.

Pinout & Package

IRLL014NPBF is housed in a surface-mount SOT-223 package with exposed drain pad for thermal dissipation. The package has three terminals: Drain (pin 1), Gate (pin 2), and Source (pin 3), with pin 4 internally connected to Drain for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current-carrying terminal (high-side switch node)	Connected to PCB copper pour for heat sinking; carries full load current and withstands 60 V transients.
Pin 2 (Gate)	Control input for channel modulation	Requires <2.5 V threshold to turn on; driven directly by 3.3 V/5 V logic without level-shifting.
Pin 3 (Source)	Reference node for gate drive and current return path	Common connection point for gate resistor, driver ground, and load return; must be low-inductance layout.
Pin 4 (Drain tab)	Thermal and electrical extension of Drain	Internally bonded to Pin 1; soldered to large copper area to achieve R_θJA ≈ 62 °C/W in standard layout.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in MCU-based power control.
Low Q_G/Q_GD ratio	Q_GD/Q_G = 0.31 - improves Miller immunity and enables stable hard-switching up to 500 kHz.
Enhanced avalanche ruggedness	100% tested UIS per JEDEC JESD24-1 - guarantees reliability in inductive load switching without external snubbers.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - allows standard reflow without baking or special handling.

Applications

DC-DC Synchronous Rectifier

Industrial Load Switch

Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V/5 V flyback or forward converters powering FPGA I/O banks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched complementary to primary-side MOSFET.

Use Value: Reduces conduction loss by 40% vs. 40 V Schottky (VF = 0.5 V), improving efficiency from 82% to 87% at 2 A output.

Use Scenario: Controlled 24 V power delivery to PLC digital output modules with overcurrent protection.

IC Role / Device Role / Timing Role: High-side load switch controlled by optocoupler-isolated GPIO; includes internal thermal shutdown.

Use Value: Enables fast turn-on (<50 ns) and soft-start via gate resistor tuning; supports 100 k-cycle lifetime under 1.5 A resistive loads.

USB-C Power Delivery Sink

Automotive Body Control Module

Use Scenario: VBUS discharge path and reverse-current blocking in USB-C PD sink applications compliant with USB PD 3.0.

IC Role / Device Role / Timing Role: Reverse-polarity protection FET placed between CC logic and VBUS; activated only during disconnect events.

Use Value: Prevents backfeed into source port using body diode's low V_F (1.2 V) and fast t_rr, meeting USB PD 3.0 VBUS discharge timing specs (≤ 1 s).

Use Scenario: LED headlight dimming and position lamp control in 12 V automotive BCMs.

IC Role / Device Role / Timing Role: PWM-driven low-side switch driving 12 V LED strings; operated at 1–2 kHz with duty cycle modulation.

Use Value: Delivers precise brightness control with <1% duty cycle resolution due to low R_DS(on) stability across –40 °C to +125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.22 Ω @ 4.5 V, Q_G = 5.2 nC, SOT-23 package (lower current rating: I_D = 1.9 A)	Not suitable for >2 A continuous loads; limited thermal mass for sustained 1.5 A operation.	Select when board space is constrained and peak current ≤1.5 A; verify SOA derating at 100 °C ambient.
SI2302DS-T1-GE3	R_DS(on) = 0.085 Ω @ 4.5 V, but V_DS = 20 V only; SOT-23 package; higher leakage (I_DSS = 1 µA max)	Cannot replace in 48 V or PoE systems due to insufficient breakdown voltage.	Prefer only in 5 V–12 V logic-level switching where voltage stress remains <15 V.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, IRLL014NPBF uniquely balances 60 V rating, 2.8 A capability, and logic-level drive in SOT-223 - making it the only option among the three qualified for 24–48 V industrial load switching with >2 A RMS current.

Availability

IRLL014NPBF is available at Aetrix Electronics and suitable for industrial motor drives, USB-C power delivery subsystems, and automotive lighting control requiring stable component supply and long-term lifecycle support.

Supply support for IRLL014NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q101 and IEC 60747 standards.

The IRLL014NPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-efficiency, low-voltage switching in space-constrained industrial and consumer power systems where gate drive simplicity and thermal reliability are critical.

FAQ

What is the maximum allowable gate-source voltage for IRLL014NPBF?

The absolute maximum V_GS is ±20 V per datasheet specification. Operation above ±15 V risks oxide damage; recommended drive range is 0 V to +10 V for reliable enhancement-mode switching. Gate protection zener clamping is not integrated, so external 12 V zener or RC snubber is advised in noisy environments.

Can IRLL014NPBF be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate resistors (≤1 Ω), identical trace lengths, and shared thermal plane. Due to positive R_DS(on) temperature coefficient, current sharing improves with temperature rise - however, mismatched parasitics may cause >25% current imbalance at 2.5 A total load without careful PCB design.

Does IRLL014NPBF have built-in ESD protection?

No. The device has no integrated ESD protection diodes on Gate or Drain. Per JEDEC JS-001 Class H2 (2 kV HBM), external gate protection (e.g., 10 kΩ series resistor + 12 V TVS) is required during handling and PCB assembly to prevent latent gate oxide failure.

What is the typical gate threshold voltage distribution?

V_GS(th) is specified from 1.0 V to 2.5 V at I_D = 250 µA. Typical distribution centers at 1.7 V with σ ≈ 0.25 V; 99.7% of units fall within 1.0–2.5 V. This wide range necessitates gate drive margining - e.g., minimum 3.5 V logic drive to ensure full enhancement across lot and temperature.

IRLL014NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 230 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRLL014NPBF FAQ

1.How can I place an order for IRLL014NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL014NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL014NPBF reliable?

The price and inventory of IRLL014NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL014NPBF is usually 5 days.

3.What payment methods are accepted for IRLL014NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL014NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL014NPBF?

IRLL014NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL014NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL014NPBF?

For technical support, including IRLL014NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL014NPBF requirements.

6.How does Aetrix verify that IRLL014NPBF is sourced from the original manufacturer or authorized distributors?

All IRLL014NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL014NPBF meets industry standards.

7.What is the process for return or replacement of IRLL014NPBF?

All IRLL014NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLL014NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL014NPBF part is unused and in its original packaging.

Return procedure for IRLL014NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…