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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLL024NPBF

Name: IRLL024NPBF
Brand: Infineon Technologies
SKU: IRLL024NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLL024NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRLL024NPBF.pdf

Description:: MOSFET N-CH 55V 3.1A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLL024NPBF from Infineon is a 55 V, 3.1 A (T_A = 70°C), logic-level N-channel Power MOSFET in SOT-223 package with R_DS(on) = 0.065 Ω @ V_GS = 10 V, 3.1 A. It integrates a rugged body diode and is rated for repetitive avalanche energy (0.1 mJ) and unclamped inductive switching. Used in DC-DC converters, LED drivers, and load-switching circuits where low gate drive voltage and thermal efficiency are critical.

For engineers reviewing the IRLL024NPBF datasheet, IRLL024NPBF pinout, IRLL024NPBF application, or IRLL024NPBF equivalent, key selection criteria include its 55 V V_DS, 0.065 Ω on-resistance at 10 V gate drive, 1.0 W PCB-mount power dissipation, SOT-223 thermal performance, and logic-level compatibility with 3.3 V/5 V microcontrollers.

Technical Context

This HEXFET® device uses fifth-generation silicon processing to achieve ultra-low R_DS(on) per die area while maintaining fast switching (t_r = 21 ns, t_f = 25 ns) and robust dv/dt immunity (5.0 V/ns). Its body diode supports synchronous rectification and reverse recovery (t_rr = 39–58 ns, Q_rr = 63–94 nC).

The SOT-223 package features an exposed drain tab for enhanced thermal conduction, enabling 1.0 W continuous dissipation on FR-4 and up to 2.1 W on 1-inch² copper. Junction-to-ambient thermal resistance is 90 °C/W (min footprint) or 50 °C/W (enhanced layout), supporting compact surface-mount designs without heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche; suitable for 24 V industrial bus and 36 V automotive auxiliary systems.
R_DS(on)	0.065 Ω @ V_GS = 10 V, I_D = 3.1 A - Enables <195 mW conduction loss at 3.1 A, reducing thermal stress in space-constrained layouts.
I_D (T_A = 70°C)	2.5 A - Continuous current rating under real-world board temperatures; defines safe operating area for sustained load switching.
P_D (PCB mount)	1.0 W - Max power dissipation on standard FR-4; determines minimum copper area needed for thermal management.
Q_g	10.4–15.6 nC - Total gate charge; dictates driver strength requirement and switching loss in PWM applications.
t_r/t_f	21 ns / 25 ns - Fast edge rates reduce transition losses in high-frequency DC-DC converters (e.g., >500 kHz).
V_GS(th)	1.0–2.0 V - Logic-level threshold enables direct drive from 3.3 V MCUs without level-shifting circuitry.

Pinout & Package

SOT-223 (TO-261AA) surface-mount package with exposed drain tab for thermal conduction. Dimensions: 6.90 × 7.45 × 1.60 mm (L × W × H); lead-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current path collector	Internally connected to exposed metal tab; must be soldered to large copper pour for thermal and electrical return.
Pin 2 (Gate)	Control terminal	High-impedance input requiring minimal drive current; sensitive to ESD-requires gate resistor for stability.
Pin 3 (Source)	Reference node for gate drive	Common return for load current and gate control loop; ties to system ground or low-side switch reference.
Tab (Drain)	Thermal & electrical drain connection	Primary heat path to PCB; electrically identical to Pin 1-must not float or be isolated from drain net.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.065 Ω @ 10 V enables <200 mW conduction loss at 3.1 A-reducing need for external heatsinking in SMT designs.
Fully avalanche-rated	Single-pulse E_AS = 120 mJ and repetitive E_AR = 0.1 mJ allow reliable operation under inductive load turn-off transients.
Logic-level gate drive	V_GS(th) = 1.0–2.0 V ensures full enhancement with 3.3 V or 5 V microcontroller outputs-eliminating gate driver ICs.
Enhanced thermal SOT-223	Exposed drain tab lowers R_θJA to 50 °C/W on 1-inch² copper-doubling power handling vs. standard SO-8 equivalents.
Fast switching	t_r/t_f = 21/25 ns minimizes overlap loss in high-frequency SMPS, improving efficiency above 300 kHz.

Applications

DC-DC Buck Converter

LED Constant-Current Driver

Use Scenario: High-efficiency 12 V to 5 V step-down converter delivering up to 3 A to FPGA or MCU core rails.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: 0.065 Ω R_DS(on) cuts rectifier loss by >60% vs. 0.4 V Schottky, raising efficiency from 88% to 93% at 2 A.

Use Scenario: Constant-current driver for 12 V string of 3× white LEDs (350 mA per channel) in architectural lighting.

IC Role / Device Role: PWM-controlled current sink switch regulating LED brightness via duty-cycle modulation.

Use Value: Logic-level V_GS(th) allows direct 3.3 V MCU PWM output drive-removing level shifter and saving BOM cost and board area.

Industrial Load Switch

Automotive Accessory Control

Use Scenario: Remote ON/OFF control of 24 V solenoid valves or relay coils in PLC I/O modules.

IC Role / Device Role: High-side or low-side power switch interfacing between microcontroller GPIO and inductive load.

Use Value: Avalanche rating (E_AS = 120 mJ) absorbs flyback energy from 24 V/1 A solenoids-preventing external snubbers.

Use Scenario: 12 V accessory power distribution (e.g., USB charger, interior lighting) in passenger vehicles.

IC Role / Device Role: Protected load switch managing inrush and overcurrent events in battery-fed subsystems.

Use Value: 55 V V_DS withstands load-dump transients (ISO 7637-2 Pulse 5a: +120 V/100 ms), eliminating need for upstream TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.055 Ω @ 4.5 V, but V_DS = 20 V - lower on-resistance but half the voltage rating.	Not suitable for 24 V+ systems; limited to 5 V/12 V logic rails and low-voltage buck stages.	Select only when V_IN ≤ 16 V and lowest possible conduction loss is prioritized over voltage margin.
SI2302DS-T1-GE3	R_DS(on) = 0.095 Ω @ 4.5 V, SOT-23 package - smaller footprint but higher R_DS(on) and 2.0 W thermal limit.	Acceptable for <1.5 A loads; unsuitable for sustained 3 A due to thermal derating in SOT-23.	Choose for space-constrained 1 A applications where board area outweighs efficiency and thermal headroom.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, IRLL024NPBF uniquely balances 55 V rating, 0.065 Ω on-resistance, and SOT-223 thermal capability-making it optimal for 24 V industrial and automotive load-switching where both voltage margin and thermal reliability are required.

Availability

IRLL024NPBF is available at Aetrix Electronics and suitable for DC-DC converters, LED drivers, industrial load switches, and automotive accessory controls requiring stable component supply and long-term manufacturability.

Supply support for IRLL024NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, thermally robust switching in space-constrained surface-mount applications across industrial automation, automotive subsystems, and consumer power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is approximately 1.8 A, derived from the linear derating factor (8.3 mW/°C) applied beyond 70°C and confirmed by Fig. 9 in the datasheet. This reflects real-world thermal limits when mounted on standard FR-4 with minimal copper area.

Can IRLL024NPBF be used in high-side switch configurations?

Yes, but requires gate drive ≥ V_IN + V_GS(th) (e.g., 12 V input needs ≥14 V gate bias). The device lacks integrated charge pump or bootstrap diode, so external high-side driver circuitry (e.g., dedicated gate driver IC or discrete bootstrap network) is mandatory for reliable enhancement.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has t_rr = 39–58 ns and Q_rr = 63–94 nC at 100 A/µs di/dt, making it viable for synchronous rectification in 300–500 kHz buck converters. However, its V_SD = 1.0 V at 1.9 A is higher than Schottky alternatives, so efficiency gain depends on duty cycle and load current.

Does IRLL024NPBF meet AEC-Q101 for automotive use?

No-IRLL024NPBF is not AEC-Q101 qualified. While its 55 V rating and avalanche capability support automotive load-dump resilience, it lacks the extended temperature screening, failure analysis, and qualification testing required for automotive-grade parts. For AEC-Q101 compliance, consider Infineon's AUIRLR024N or similar qualified variants.

IRLL024NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15.6 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRLL024NPBF FAQ

1.How can I place an order for IRLL024NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL024NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL024NPBF reliable?

The price and inventory of IRLL024NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL024NPBF is usually 5 days.

3.What payment methods are accepted for IRLL024NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL024NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL024NPBF?

IRLL024NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL024NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL024NPBF?

For technical support, including IRLL024NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL024NPBF requirements.

6.How does Aetrix verify that IRLL024NPBF is sourced from the original manufacturer or authorized distributors?

All IRLL024NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL024NPBF meets industry standards.

7.What is the process for return or replacement of IRLL024NPBF?

All IRLL024NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLL024NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL024NPBF part is unused and in its original packaging.

Return procedure for IRLL024NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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