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Infineon Technologies IRLL024ZPBF

Part No.:
IRLL024ZPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRLL024ZPBF.pdf
Description:
MOSFET N-CH 55V 5A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,902

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Product details

Overview

IRLL024ZPBF from Infineon Technologies is a 55V, 5.0A N-channel enhancement-mode Power MOSFET in SOT-223 package, featuring 60 mΩ RDS(on) at VGS = 10 V, 150°C maximum junction temperature, and rated repetitive avalanche energy up to 38 mJ. It serves as a low-side switching device in DC-DC converters, motor drivers, and load switches where fast switching, thermal robustness, and body diode recovery (trr = 15–23 ns) are critical.

For engineers reviewing the IRLL024ZPBF datasheet, IRLL024ZPBF pinout, IRLL024ZPBF application, or IRLL024ZPBF equivalent, key selection criteria include verified RDS(on) ≤ 80 mΩ at 3.0A/10V, gate charge Qg = 7.0–11 nC, unclamped inductive switching capability, SOA compliance up to 5A/25V, and lead-free SOT-223 thermal performance (RθJA = 45°C/W on copper PCB).

Technical Context

This HEXFET® device employs advanced silicon processing to minimize conduction loss per unit area while maintaining ruggedness against transient overloads. Its design integrates a co-packaged intrinsic body diode with trr = 15–23 ns and Qrr = 9.1–14 nC, enabling efficient freewheeling in synchronous buck topologies without external Schottky supplementation.

The MOSFET operates with a gate threshold voltage VGS(th) of 1.0–3.0 V and exhibits stable RDS(on) temperature coefficient (0.049 V/°C), supporting reliable current sensing and thermal foldback in overcurrent protection circuits across –55°C to +150°C ambient range.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55 V - Maximum drain-source blocking voltage; defines safe operation in 24V/48V industrial bus systems.
RDS(on)60 mΩ (typ), 80 mΩ (max) @ VGS = 10 V - Enables <150 mW conduction loss at 5A, reducing heatsink requirements.
ID5.0 A @ TA = 25°C - Continuous current rating suitable for medium-power switching loads.
Qg7.0–11 nC - Gate drive energy determines required driver strength and switching speed in PWM control.
trr15–23 ns - Fast body diode recovery minimizes switching loss and voltage overshoot during hard commutation.
EAS38 mJ (tested) - Confirmed single-pulse avalanche energy supports unclamped inductive turn-off in relay/motor drives.
RθJA45°C/W (copper PCB) - Thermal resistance enables 1.0 W dissipation before reaching 150°C junction limit at 25°C ambient.

Pinout & Package

IRLL024ZPBF is housed in a surface-mount SOT-223 package with three terminals: Drain (D), Source (S), and Gate (G). The exposed drain pad provides enhanced thermal conduction to the PCB. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Source (common with Pin 3).

Pin/TerminalCircuit RoleDesign Meaning
Gate (Pin 1)Control inputReceives 0–10 V logic-level signal; requires ≤11 nC charge for full enhancement.
Drain (Pin 2 / Tab)High-side power nodeConnected to load supply rail; electrically tied to exposed metal tab for thermal and electrical conduction.
Source (Pins 3 & 4)Reference node / return pathCommon source connection for gate drive reference and load current return; low-inductance dual-pin layout reduces switching noise.

Key Features

FeatureDesign Value
Ultra-low RDS(on)60 mΩ typ at 10 V gate drive - reduces I²R losses by >30% vs. legacy SOT-223 MOSFETs at same current.
150°C junction ratingExtended thermal margin allows operation in sealed enclosures or high-ambient environments without derating.
Repetitive avalanche ratedTested to 38 mJ single-pulse and validated for repetitive use within SOA limits - eliminates need for external clamping in inductive snubbers.
Fast body diodetrr = 15–23 ns, Qrr = 9.1–14 nC - enables clean zero-voltage switching transitions in synchronous rectification.

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: 12V-to-5V step-down converter delivering up to 4A continuous output in industrial PLC I/O modules.

IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode to improve efficiency above 85% at full load.

Use Value: 60 mΩ RDS(on) cuts conduction loss by 1.2 W vs. 0.45 V diode drop, enabling passive cooling and higher power density.

Use Scenario: H-bridge driver for 24V, 3A brushed motors in automated valve actuators.

IC Role / Device Role: Low-side switch controlling motor direction and enabling regenerative braking via body diode conduction.

Use Value: 15–23 ns trr prevents shoot-through during polarity reversal and sustains 38 mJ avalanche energy during inductive flyback.

LED Constant-Current DriverHot-Swap Load Switch

Use Scenario: Linear+PWM dimmable LED driver powering 10W white LED strings in architectural lighting fixtures.

IC Role / Device Role: Precision current-sink switch modulated at 1–20 kHz to regulate LED brightness without color shift.

Use Value: Stable RDS(on) tempco (0.049 V/°C) ensures consistent current regulation across –40°C to +85°C operating range.

Use Scenario: Inrush-limited 24V power distribution to field-replaceable modules in telecom shelf systems.

IC Role / Device Role: Controlled turn-on switch with soft-start enabled by gate resistor network and body diode reverse recovery management.

Use Value: Verified 5.0A continuous rating and 40A pulsed capability support 100 ms inrush surges while maintaining <100 mV dropout at steady state.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3026LSD-13RDS(on) = 30 mΩ @ 4.5 V, SOT-23-3 package, lower current rating (3.2 A)Better suited for space-constrained 3.3V/5V logic-driven loads; not rated for 55V bus or 5A continuous duty.Select when board area is critical and gate drive is ≤5 V; avoid for 24V+ systems or >3A loads.
SI2302DS-T1-GE3RDS(on) = 75 mΩ @ 4.5 V, SOT-23 package, 2.6A continuous rating, no avalanche ratingLacks repetitive avalanche validation and thermal margin; unsuitable for inductive switching or high-temp environments.Acceptable only for low-energy, resistive switching below 10V; verify SOA compliance separately.

Compared with DMN3026LSD-13 and SI2302DS-T1-GE3, IRLL024ZPBF delivers superior 55V blocking, 5A thermal capability, and certified avalanche robustness-making it the only choice among the three for 24V motor control or industrial DC-DC designs requiring reliability under transient stress.

Availability

IRLL024ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, LED current sinks, and hot-swap load switches requiring stable component supply, long-term manufacturability, and RoHS-compliant lead-free packaging.

Supply support for IRLL024ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The HEXFET® Power MOSFET product line targets high-efficiency, thermally demanding power conversion applications-including industrial motor drives, server VRMs, and renewable energy inverters-where low RDS(on), fast switching, and rugged avalanche performance are mandatory.

FAQ

Is IRLL024ZPBF suitable for 3.3V logic-level gate drive?

No. IRLL024ZPBF has a gate threshold voltage range of 1.0–3.0 V but is specified for RDS(on) ≤ 80 mΩ only at VGS = 10 V. At 3.3 V, RDS(on) exceeds 250 mΩ, causing excessive conduction loss. Use logic-level variants like IRLML6344TRPBF instead for 3.3 V drive.

What is the maximum allowable continuous drain current at 70°C ambient?

Per datasheet, continuous drain current is derated to 4.0 A at TA = 70°C with standard PCB mounting. This reflects thermal limitation-not silicon current capacity-and assumes 45°C/W junction-to-ambient resistance on copper-clad FR-4.

Does IRLL024ZPBF require a gate resistor for EMI suppression?

Yes. A 10–56 Ω series gate resistor is recommended to dampen ringing caused by parasitic LGD/Ciss resonance. Test data shows optimal switching (minimal VDS overshoot and dV/dt) at RG = 56 Ω with 3.0 A load and 28 V bus, per Figure 18a/b.

Can the body diode be used for reverse polarity protection?

No. The intrinsic body diode conducts forward from source to drain, making it unsuitable for reverse polarity protection. For that function, an external P-channel MOSFET or dedicated protection IC must be used; IRLL024ZPBF's diode is optimized for freewheeling, not blocking.

IRLL024ZPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
380 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRLL024ZPBF FAQ

1.How can I place an order for IRLL024ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL024ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL024ZPBF reliable?

The price and inventory of IRLL024ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL024ZPBF is usually 5 days.

3.What payment methods are accepted for IRLL024ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL024ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL024ZPBF?

IRLL024ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL024ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL024ZPBF?

For technical support, including IRLL024ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL024ZPBF requirements.

6.How does Aetrix verify that IRLL024ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLL024ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL024ZPBF meets industry standards.

7.What is the process for return or replacement of IRLL024ZPBF?

All IRLL024ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLL024ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL024ZPBF part is unused and in its original packaging.

Return procedure for IRLL024ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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