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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLL2705PBF

Name: IRLL2705PBF
Brand: Infineon Technologies
SKU: IRLL2705PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLL2705PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRLL2705PBF.pdf

Description:: MOSFET N-CH 55V 3.8A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

IRLL2705PBF from Infineon Technologies

IRLL2705PBF from Infineon Technologies is a 30 V, 4.9 A N-channel enhancement-mode MOSFET in SOT-223 package, optimized for low-voltage DC-DC conversion and load switching. It features 50 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and operates up to T_J = 175 °C - deployed in USB power delivery modules and industrial sensor interface circuits.

For engineers reviewing the IRLL2705PBF datasheet, IRLL2705PBF pinout, IRLL2705PBF application, or IRLL2705PBF equivalent, key selection criteria include its 30 V V_DSS, 4.9 A I_D continuous rating, 50 mΩ on-resistance, gate threshold voltage of 1.0–2.5 V, and SOT-223 thermal performance under 1 W P_D at T_A = 25 °C.

Technical Context

This MOSFET uses planar silicon process with optimized channel geometry to achieve low R_DS(on) while maintaining fast switching (t_d(on) = 10 ns, t_f = 15 ns) and low gate charge (Q_G = 8.5 nC). Its body diode exhibits 1.3 V forward drop at I_SD = 3.8 A and supports unclamped inductive switching up to 25 mJ at T_J = 25 °C.

The device is characterized for operation with gate drive voltages from 3.0 V to 15 V, delivering full current capability down to 4.5 V V_GS; its SOA is defined for single-pulse conditions up to 10 ms at T_J = 150 °C with V_DS ≤ 20 V and I_D ≤ 4.9 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 24 V rail applications.
R_DS(on) @ V_GS = 10 V	50 mΩ - conduction loss of 245 mW at 4.9 A; enables >95% efficiency in 5–12 V synchronous buck stages.
I_D (continuous)	4.9 A - max DC current at T_A = 25 °C with PCB heatsinking; derates to 2.8 A at T_A = 70 °C in standard FR4 layout.
Q_G	8.5 nC - total gate charge required for full turn-on; determines driver strength needed for <100 ns switching transitions.
V_GS(th)	1.0–2.5 V - gate threshold range enabling logic-level compatibility with 3.3 V microcontrollers without level-shifting.
E_AS	25 mJ - single-pulse avalanche energy rating at T_J = 25 °C; supports robustness against inductive kickback in relay drivers.
C_iss	420 pF - input capacitance at V_DS = 25 V; sets Miller time constant and influences EMI behavior during hard-switching.

Pinout & Package

SOT-223 package with exposed drain pad for enhanced thermal conduction; 4-pin configuration (Drain connected to tab), rated for 1.0 W dissipation at T_A = 25 °C with 1 in² 2-oz copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to ground or low-side return path in high-side switch configurations.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <1 µA bias; driven directly by 3.3 V/5 V logic with series resistor for ringing suppression.
Pin 3 (Drain)	Power output	Connected to internal die backside metal; electrically tied to exposed tab - must be isolated from heatsink unless referenced to same potential.
Pin 4 (Source)	Source terminal (dual bond)	Second source connection reducing package inductance and improving current sharing in high-di/dt switching.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in battery-powered MCU-controlled loads.
100% Rg-tested	Each unit verified for gate resistance consistency - ensures predictable turn-on timing across production lots.
Lead-free and RoHS-compliant	Pb-free terminations with matte tin plating - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly.
Enhanced avalanche ruggedness	Guaranteed single-pulse E_AS ≥ 25 mJ - enables reliable operation in flyback snubberless designs and solenoid control.

Applications

USB Power Switching

Industrial Sensor Interface

Use Scenario: Selective power gating of USB peripheral ports in embedded host controllers to meet USB 2.0 suspend current limits.

IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path; switched at <1 Hz during enumeration or fault recovery.

Use Value: 50 mΩ R_DS(on) limits voltage drop to <250 mV at 5 V/500 mA, preserving bus compliance while enabling <1 µA off-state leakage.

Use Scenario: Isolating analog sensor supply rails (e.g., pressure transducers) from shared 3.3 V system domain during sleep mode.

IC Role / Device Role / Timing Role: High-side power switch enabling rail shutdown; controlled by GPIO with <10 µs response to wake-event interrupts.

Use Value: Logic-level V_GS(th) allows direct MCU drive; 1.0 V gate threshold ensures stable turn-off even with 3.3 V supply droop to 2.8 V.

DC-DC Synchronous Rectifier

LED Driver Current Sink

Use Scenario: Secondary-side synchronous rectification in isolated 5 V/3 A flyback converters for PoE-powered edge devices.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal with 50 ns dead-time control.

Use Value: 8.5 nC Q_G enables clean zero-voltage switching at 500 kHz; 420 pF C_iss minimizes capacitive coupling noise into feedback loop.

Use Scenario: Constant-current sink for high-brightness indicator LEDs in automotive instrument clusters with PWM dimming.

IC Role / Device Role / Timing Role: PWM-controlled current regulator; switched at 1–2 kHz with 10-bit resolution for smooth brightness control.

Use Value: 4.9 A I_D rating supports parallel LED strings up to 2 A per channel; 175 °C T_J(max) ensures reliability under dashboard temperature cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(on) = 25 mΩ @ V_GS = 10 V; SOT-23-3 package; lower I_D = 3.8 A continuous.	Better R_DS(on) but limited thermal mass - suitable only for <1.5 W dissipation in compact layouts.	Select when board space is constrained and peak current ≤3 A; verify SOA under pulsed load conditions.
SI2305DS-T1-GE3	R_DS(on) = 48 mΩ @ V_GS = 4.5 V; SOT-23 package; identical V_DSS and V_GS(th) range.	Same logic-level drive but 30% lower power handling - requires derating above 1.2 W ambient.	Prefer for cost-sensitive, low-power (<1 W) applications where SOT-223 footprint is not required.

Compared with DMN3025LSD-13 and SI2305DS-T1-GE3, IRLL2705PBF offers superior thermal capability via SOT-223 and higher continuous current margin, making it optimal for sustained 4–5 A loads where junction temperature stability is critical.

Availability

IRLL2705PBF is available at Aetrix Electronics and suitable for USB power switching, industrial sensor interface, DC-DC synchronous rectification, and LED driver current sink applications requiring stable component supply and long-term manufacturability.

Supply support for IRLL2705PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

IRLL2705PBF belongs to the HEXFET® logic-level MOSFET product line, engineered for high-efficiency, low-voltage power switching in space-constrained and thermally demanding embedded systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRLL2705PBF has a maximum junction temperature rating of 175 °C. Continuous operation at this limit requires strict thermal design: PCB layout with ≥1 in² 2-oz copper, minimal trace length to the drain tab, and ambient temperature ≤70 °C. Derating curves in the datasheet specify 4.9 A I_D only at T_A = 25 °C.

Does IRLL2705PBF support 3.3 V microcontroller gate drive?

Yes - its V_GS(th) range of 1.0–2.5 V and full enhancement at V_GS ≥ 4.5 V ensure reliable turn-on with 3.3 V logic. At 3.3 V V_GS, R_DS(on) rises to ~120 mΩ, limiting usable current to ~2 A for <100 mW loss; add a small gate pull-up if driving from open-drain outputs.

How is the SOT-223 drain tab electrically configured?

The exposed drain tab in the SOT-223 package is internally bonded to Pin 3 (Drain) and forms the primary thermal path. It is electrically active - any heatsink or copper pour contacting the tab must be at the same potential as the drain node. Insulating pads or isolation coatings are required if mounting to grounded metal enclosures.

Is avalanche energy rating tested per unit or lot-sampled?

IRLL2705PBF undergoes 100% production avalanche testing per unit - each device is subjected to a single-pulse E_AS stress of ≥25 mJ at T_J = 25 °C using standardized test circuitry (per Figure 9 in datasheet PD-95338). This ensures guaranteed ruggedness without reliance on statistical sampling.

IRLL2705PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRLL2705PBF FAQ

1.How can I place an order for IRLL2705PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL2705PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL2705PBF reliable?

The price and inventory of IRLL2705PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL2705PBF is usually 5 days.

3.What payment methods are accepted for IRLL2705PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL2705PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL2705PBF?

IRLL2705PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL2705PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL2705PBF?

For technical support, including IRLL2705PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL2705PBF requirements.

6.How does Aetrix verify that IRLL2705PBF is sourced from the original manufacturer or authorized distributors?

All IRLL2705PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL2705PBF meets industry standards.

7.What is the process for return or replacement of IRLL2705PBF?

All IRLL2705PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLL2705PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL2705PBF part is unused and in its original packaging.

Return procedure for IRLL2705PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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