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Infineon Technologies IRLL2705TR

Part No.:
IRLL2705TR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRLL2705TR.pdf
Description:
MOSFET N-CH 55V 3.8A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,833

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Product details

Overview

IRLL2705TR from International Rectifier is a logic-level N-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 55V VDSS, 3.8A continuous drain current at 25°C, and 0.04Ω RDS(on) at VGS = 10V. It features fast switching (tr = 12ns), low gate charge (Qg = 32nC typ), and integrated body diode with 1.3V forward voltage at 3.8A - used in DC-DC converters, LED drivers, and load-switching circuits.

For engineers reviewing the IRLL2705TR datasheet, IRLL2705TR pinout, IRLL2705TR application, or IRLL2705TR equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0V), thermal resistance (RθJA = 93°C/W on FR-4), avalanche energy rating (EAS = 110mJ), and SOT-223 package thermal performance with enlarged heatsink tab.

Technical Context

This HEXFET device employs fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (1.0–2.0V) enables direct interfacing with 3.3V/5V microcontrollers without level-shifting circuitry.

The integrated body diode supports synchronous rectification and reverse-current protection in buck converters and motor H-bridge freewheeling paths. Dynamic dv/dt rating of 7.5V/ns ensures robust operation under fast transient conditions without spurious turn-on.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55V - maximum blocking voltage before avalanche breakdown; suitable for 24V industrial bus and 48V telecom systems.
RDS(on) @ VGS=10V0.04Ω - delivers ≤0.58W conduction loss at 3.8A, enabling high-efficiency low-voltage switching.
ID @ TA=25°C3.8A - continuous drain current rating under standard PCB-mount conditions with 1.0W power dissipation limit.
Qg32nC typical - low total gate charge reduces driver power requirement and enables <100ns switching transitions.
VGS(th)1.0–2.0V - logic-level threshold allows full enhancement with 3.3V GPIOs, eliminating external gate drivers.
EAS110mJ - single-pulse avalanche energy rating supports reliable operation during inductive load turn-off transients.
RθJA (FR-4)93°C/W - junction-to-ambient thermal resistance defines safe operating area for surface-mount thermal design.

Pinout & Package

SOT-223 (TO-261AA) surface-mount package with exposed drain tab for enhanced thermal conduction. The tab is electrically connected to the drain terminal and serves as primary heatsink interface.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal of N-channel MOSFETReference node for gate drive; connects to ground or low-side return path in switching topologies.
Pin 2 (Gate)Control electrodeReceives logic-level voltage to modulate channel conductivity; requires <32nC charge for full turn-on.
Pin 3 (Drain)High-side current pathConnects to load or supply rail; tab is internally bonded to this pin for thermal and electrical continuity.
Tab (Drain)Drain extension / thermal padProvides low-thermal-resistance path to PCB copper; must be soldered to ≥1in² copper pour for 2.1W rating.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced with 3.3V or 5V microcontroller outputs - no level shifter required.
Ultra-low RDS(on)0.04Ω at 10V enables <0.6W conduction loss at rated current, reducing thermal management burden.
Fast switching speed12ns rise time and 22ns fall time support >1MHz PWM frequencies in compact DC-DC designs.
Robust avalanche capability110mJ single-pulse EAS rating ensures reliability in inductive load switching without snubbers.
SOT-223 thermal designExposed drain tab allows 2.1W power dissipation on 1in² copper board - 2.1× higher than standard SOIC-8 equivalents.

Applications

DC-DC Buck ConverterLED Constant-Current Driver

Use Scenario: High-efficiency step-down regulator for FPGA core voltage (1.2V/3A) powered from 12V rail.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 0.04Ω RDS(on) cuts rectifier loss by >60% vs. 0.4V Schottky, increasing conversion efficiency from 88% to 94% at full load.

Use Scenario: Constant-current dimming circuit for automotive interior lighting using PWM-controlled 350mA LED string.

IC Role / Device Role / Timing Role: Low-side current-sink switch modulated at 1kHz to control average LED current.

Use Value: Logic-level VGS(th) ensures full turn-on with MCU's 3.3V PWM output, eliminating gate driver IC and saving BOM cost.

Industrial Load SwitchMotor H-Bridge Freewheeling

Use Scenario: 24V solenoid actuator control in programmable logic controller (PLC) output module.

IC Role / Device Role / Timing Role: High-side or low-side power switch enabling/disabling load with overcurrent and thermal protection.

Use Value: 55V VDSS withstands 24V system transients up to 40V, and 110mJ EAS absorbs inductive kickback without external clamp.

Use Scenario: Bidirectional 12V brushed DC motor control in robotic joint actuator with PWM speed regulation.

IC Role / Device Role / Timing Role: One quadrant of H-bridge providing freewheeling path via intrinsic body diode during PWM off-time.

Use Value: 1.3V VSD body diode forward drop at 3.8A reduces freewheeling loss vs. discrete Schottky, improving thermal margin at 20kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004LK-7RDS(on) = 0.035Ω @ 4.5V, but VDSS = 20V - lower voltage rating limits use to ≤12V systems.Not suitable for 24V/48V bus applications due to 20V breakdown limit.Select when operating below 12V and prioritizing lowest possible on-resistance at 3.3V drive.
SI2305DS-T1-GE3VDSS = 30V, RDS(on) = 0.045Ω @ 4.5V, SOT-23 package - smaller footprint but 0.5W max power dissipation.Limited to sub-2A loads due to thermal constraints; unsuitable for 3.8A continuous operation.Choose for space-constrained designs with <2A current and ≤30V bus requirements.

Compared with DMN2004LK-7 and SI2305DS-T1-GE3, IRLL2705TR uniquely balances 55V rating, 3.8A current capability, and logic-level drive in SOT-223 - making it optimal for industrial 24V/48V load switching where thermal headroom and avalanche robustness are critical.

Availability

IRLL2705TR is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and telecom power management requiring stable component supply across multi-year production cycles.

Supply support for IRLL2705TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor innovation, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for power conversion and motor control.

The HEXFET® Power MOSFET product line was engineered for high-current, high-reliability switching in industrial, automotive, and computing power supplies - emphasizing low RDS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRLL2705TR at 70°C ambient?

The maximum continuous drain current is 3.0A at TA = 70°C with VGS = 10V and standard PCB mounting. This derating reflects thermal limits imposed by RθJA = 93°C/W on FR-4; using a 1in² copper pad increases PD to 2.1W and supports higher current in thermally optimized layouts.

Can IRLL2705TR be driven directly by a 3.3V microcontroller GPIO?

Yes - its gate threshold voltage range (1.0–2.0V) and guaranteed RDS(on) of 0.051Ω at VGS = 4.0V ensure full enhancement with 3.3V logic. At 3.8A drain current, conduction loss remains ≤0.74W, well within thermal limits when properly heatsinked.

Does IRLL2705TR have avalanche-rated operation?

Yes - it is specified for unclamped inductive switching with EAS = 110mJ (single-pulse) at TJ = 25°C. This rating validates safe operation during inductive load turn-off without external snubbers, provided peak IAS ≤ 3.8A and VDD ≤ 25V per test conditions in Figure 12.

What is the recommended PCB layout for optimal thermal performance?

Use minimum IPC-2221 Class B copper footprint for SOT-223, with the drain tab soldered to ≥1in² solid copper pour connected via multiple thermal vias to internal ground planes. Avoid narrow traces on source/gate lines to minimize parasitic inductance during fast switching transitions.

IRLL2705TR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
40mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRLL2705TR FAQ

1.How can I place an order for IRLL2705TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL2705TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL2705TR reliable?

The price and inventory of IRLL2705TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL2705TR is usually 5 days.

3.What payment methods are accepted for IRLL2705TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL2705TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL2705TR?

IRLL2705TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL2705TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL2705TR?

For technical support, including IRLL2705TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL2705TR requirements.

6.How does Aetrix verify that IRLL2705TR is sourced from the original manufacturer or authorized distributors?

All IRLL2705TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL2705TR meets industry standards.

7.What is the process for return or replacement of IRLL2705TR?

All IRLL2705TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLL2705TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL2705TR part is unused and in its original packaging.

Return procedure for IRLL2705TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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