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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLL3303PBF

Name: IRLL3303PBF
Brand: Infineon Technologies
SKU: IRLL3303PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLL3303PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRLL3303PBF.pdf

Description:: MOSFET N-CH 30V 4.6A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLL3303PBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 30V V_DSS, 4.6A continuous drain current at 25°C, and 0.031Ω R_DS(on) at V_GS = 10V. It features fast switching (t_r = 22 ns), low gate charge (Q_g = 34 nC), and integrated body diode with 1.3V forward voltage at 4.6A - used in DC-DC converters, load switches, and motor drive half-bridges.

For engineers reviewing the IRLL3303PBF datasheet, IRLL3303PBF pinout, IRLL3303PBF application, or IRLL3303PBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.5V), thermal resistance (R_θJA = 93°C/W on FR-4), avalanche energy rating (E_AS = 140 mJ), and SOT-223 thermal pad layout requirements.

Technical Context

This HEXFET device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (1.0–2.5V) enables direct interfacing with 3.3V/5V microcontrollers without level-shifting.

The SOT-223 package integrates an exposed thermal tab that supports 1.0W power dissipation on standard FR-4 PCBs and up to 2.1W on 1-inch² copper pads. Dynamic dv/dt immunity (1.3 V/ns) and reverse recovery characteristics (t_rr = 65–98 ns, Q_rr = 160–240 nC) are optimized for hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; sets upper limit for input rail in buck converters or load switches.
R_DS(on) @ V_GS = 10V	0.031 Ω - Conduction loss of 0.66 W at 4.6 A; determines I²R heating in steady-state operation.
I_D Continuous @ 25°C	4.6 A - Max DC current with derating above 70°C; defines usable current range in thermally constrained layouts.
Q_g	34 nC - Total gate charge required for full turn-on; impacts driver strength requirement and switching loss.
t_r/t_f	22 ns / 28 ns - Rise/fall times under 15V V_DD, 6.2Ω gate resistor; sets minimum practical PWM frequency and EMI profile.
E_AS	140 mJ - Single-pulse avalanche energy rating; enables robustness against inductive kickback in relay/motor drive circuits.
R_θJA (FR-4)	93 °C/W - Junction-to-ambient thermal resistance on minimal footprint; determines temperature rise under 1W dissipation.

Pinout & Package

SOT-223 (TO-261AA) surface-mount package with exposed thermal tab (pin 4), designed for vapor-phase, infrared, or wave soldering. The enlarged copper tab improves heatsinking over standard SOT-23/SOT-89 packages.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for drain current	Internally connected to substrate; forms cathode of integral body diode; must be routed to low-impedance ground plane.
2 (Gate)	Control terminal for channel conduction	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD; requires RC snubber if driving inductive loads.
3 (Drain)	Main high-side current path	Connected to internal die backside; electrically tied to thermal tab; must avoid floating copper pour to prevent parasitic capacitance.
4 (Tab/Drain)	Thermal and electrical connection to drain	Exposed metal pad soldered to PCB copper; provides primary thermal path and carries full drain current; must be grounded to drain net.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) max 2.5V ensures full enhancement with 3.3V MCU GPIO, eliminating need for gate driver ICs in low-power systems.
Fifth-generation HEXFET process	Reduces R_DS(on) by ~20% vs. prior gen at same die size, enabling smaller PCB area or higher efficiency in space-constrained designs.
Fast switching with low Q_gd	10 nC Miller charge minimizes shoot-through risk in half-bridge configurations and reduces gate drive power loss.
Enhanced avalanche ruggedness	140 mJ single-pulse rating allows reliable operation in unclamped inductive switching events common in solenoid and brushed motor control.
SOT-223 thermal tab	Enables 2.1W power dissipation on 1-inch² copper - double the capability of standard SO-8 MOSFETs at equivalent cost and footprint.

Applications

DC-DC Buck Converter

Microcontroller-Driven Load Switch

Use Scenario: 5V-to-3.3V point-of-load regulator in embedded IoT node with 3A output requirement.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz PWM frequency with 22 ns rise time.

Use Value: 0.031Ω R_DS(on) limits conduction loss to <0.3W, while logic-level gate allows direct STM32H7 GPIO control without external driver.

Use Scenario: Controlled 12V power rail enable for sensor module with inrush current limiting.

IC Role / Device Role / Timing Role: High-side load switch with soft-start via gate RC network; body diode blocks reverse current during hot-swap.

Use Value: 1.3V V_SD at 4.6A ensures <6 mW reverse conduction loss; 4.6A pulsed rating handles 3× inrush without derating.

Brushed DC Motor Driver (Half-Bridge)

USB-C Power Delivery Load Switch

Use Scenario: 24V, 2A bidirectional motor control in portable medical pump using dual IRLL3303PBF in half-bridge.

IC Role / Device Role / Timing Role: Low-side switch with 28 ns fall time enabling 20 kHz PWM for torque ripple reduction.

Use Value: 140 mJ E_AS withstands flyback energy from 10 mH motor inductance during rapid deceleration.

Use Scenario: 5V/3A USB-C port power path management with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: Primary pass element controlled by USB PD controller; body diode prevents backfeed during dead-time.

Use Value: 93°C/W R_θJA on FR-4 keeps junction below 125°C at 1.5A continuous, meeting USB-IF thermal compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(on) = 0.025Ω @ 4.5V (lower), but SOT-26 package has higher R_θJA (110°C/W) and no thermal tab.	Better conduction loss in low-V_GS apps; unsuitable for >1W dissipation without forced air.	Prefer when gate drive is limited to 4.5V and thermal budget is tight only at low duty cycle.
SI2303DS-T1-GE3	R_DS(on) = 0.095Ω @ 4.5V (higher), SOT-23 package, lower ID (3.2A), no avalanche rating.	Lower cost for non-rugged, low-current (<2A) applications like LED dimming or signal switching.	Choose only for space-constrained, non-inductive, sub-2A loads where avalanche immunity is not required.

Compared with DMN3025LSD-13 and SI2303DS-T1-GE3, IRLL3303PBF uniquely balances logic-level drive, thermal performance (SOT-223 tab), and unclamped avalanche capability - making it optimal for industrial motor control and regulated power switches where reliability under transient stress is critical.

Availability

IRLL3303PBF is available at Aetrix Electronics and suitable for DC-DC converters, microcontroller-driven load switches, brushed DC motor drivers, and USB-C power delivery systems requiring stable component supply and long-term industrial availability.

Supply support for IRLL3303PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET innovation.

The IRLL series targets surface-mount logic-level power switching, emphasizing thermal efficiency, ease of PCB assembly, and ruggedness in cost-sensitive industrial and consumer power stages.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRLL3303PBF supports 3.7A continuous drain current at T_A = 70°C with V_GS = 10V, based on linear derating from 4.6A at 25°C at 8.3 mW/°C. This reflects real-world thermal limits on standard FR-4 PCBs without additional heatsinking or airflow.

Can IRLL3303PBF be used in a high-side configuration?

Yes, but requires gate drive ≥ V_IN + V_GS(th) (e.g., 12V gate for 12V rail). Its logic-level threshold enables bootstrap or charge-pump high-side drivers; however, the SOT-223 drain-tab connection mandates careful isolation of the tab from ground planes in high-side layouts.

Is the body diode suitable for reverse polarity protection?

No - the body diode conducts forward from source to drain, so it cannot block reverse input voltage. For reverse polarity protection, the device must be placed with drain toward input and source toward load, relying on R_DS(on) conduction; external Schottky or dedicated protection ICs are recommended instead.

What is the recommended PCB footprint for optimal thermal performance?

Infineon specifies a minimum footprint with 10 mm² copper pad connected to pin 4 (drain/tab) and thermal vias to inner ground layers. On FR-4, this achieves R_θJA = 93°C/W; expanding to 1-inch² copper reduces it to 48°C/W, enabling 2.1W dissipation per the datasheet's "**" condition.

IRLL3303PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRLL3303PBF FAQ

1.How can I place an order for IRLL3303PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL3303PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL3303PBF reliable?

The price and inventory of IRLL3303PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL3303PBF is usually 5 days.

3.What payment methods are accepted for IRLL3303PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL3303PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL3303PBF?

IRLL3303PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL3303PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL3303PBF?

For technical support, including IRLL3303PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL3303PBF requirements.

6.How does Aetrix verify that IRLL3303PBF is sourced from the original manufacturer or authorized distributors?

All IRLL3303PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL3303PBF meets industry standards.

7.What is the process for return or replacement of IRLL3303PBF?

All IRLL3303PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLL3303PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL3303PBF part is unused and in its original packaging.

Return procedure for IRLL3303PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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