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Infineon Technologies IRLL3303TR

Part No.:
IRLL3303TR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRLL3303TR.pdf
Description:
MOSFET N-CH 30V 4.6A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,940

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Product details

Overview

IRLL3303TR from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 30V VDSS, 4.6A continuous drain current at 25°C, and 0.031Ω RDS(on) at VGS = 10V. It features fast switching (tr = 22ns, tf = 28ns), low gate charge (Qg = 34nC typ), and integrated body diode with 1.3V forward voltage at 4.6A - used in DC-DC synchronous buck converters, LED drivers, and load-switching circuits.

For engineers reviewing the IRLL3303TR datasheet, IRLL3303TR pinout, IRLL3303TR application, or IRLL3303TR equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.5V), thermal resistance (RθJA = 93°C/W on FR-4), avalanche ruggedness (EAS = 140mJ), and SOT-223 thermal pad layout requirements for 1.0W dissipation.

Technical Context

This HEXFET® device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) up to 10ms pulses. Its gate threshold voltage (1.0–2.5V) enables direct drive from 3.3V/5V microcontrollers without level-shifting.

The integrated body diode supports synchronous rectification with trr = 65–98ns and Qrr = 160–240nC, and the device sustains unclamped inductive switching with IAS = 4.6A and EAS = 140mJ under defined test conditions (VDD = 15V, L = 13mH, TJ = 25°C).

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30V - maximum blocking voltage before avalanche breakdown; sets upper limit for input rail in 24V systems
RDS(on) @ VGS=10V0.031Ω - conduction loss of 0.66W at 4.6A; enables high-efficiency operation below 1W PCB power dissipation
ID @ TA=25°C4.6A - continuous current rating with standard FR-4 footprint; derates to 3.7A at 70°C ambient
Qg34nC typ - determines gate driver current requirement; 3.4mA avg for 100kHz switching with 10V swing
tr/tf22ns/28ns - enables >1MHz switching in hard-switched topologies with minimal overlap loss
EAS140mJ - energy-handling capability during unclamped inductive turn-off; supports reliable operation in relay/snubberless loads
RθJA (FR-4)93°C/W - junction-to-ambient thermal resistance defines max. power before exceeding 150°C TJ at 25°C ambient

Pinout & Package

SOT-223 (TO-261AA) surface-mount package with exposed thermal tab (pin 4) for enhanced heatsinking. Designed for vapor-phase, infrared, or wave soldering; compatible with automated pick-and-place.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateLogic-level control input; requires ≤2.5V VGS(th) to initiate conduction; gate capacitance Ciss = 840pF
2 (S)SourceReference node for gate drive and current return path; tied to ground or low-side switch node
3 (D)DrainHigh-side power output terminal; connects to load or supply rail; carries full load current and avalanche stress
4 (Tab)Drain (internally connected)Exposed copper thermal pad - must be soldered to PCB copper pour for thermal performance; electrically identical to pin 3

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.0–2.5V enables direct interface with 3.3V/5V MCUs and digital logic without external level shifters
Ultra-low RDS(on)0.031Ω at 10V reduces I²R losses by >40% vs. legacy SOT-223 MOSFETs in 4A load-switch applications
Fast switching speed22ns rise / 28ns fall time minimizes transition losses in PWM frequencies up to 2MHz
Robust avalanche rating140mJ single-pulse EAS ensures reliability in inductive load switching without external snubbers
SOT-223 thermal designExposed drain tab allows 1.0W dissipation on FR-4 - 2.5× higher than standard SO-8 equivalents at same footprint

Applications

DC-DC Synchronous Buck ConverterLED Constant-Current Driver

Use Scenario: High-efficiency 12V-to-5V step-down converter for embedded controllers with 3A output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 500kHz with gate driven by controller's complementary output.

Use Value: Reduces conduction loss by 0.45W vs. 0.5V-drop diode, enabling >94% efficiency at full load without heatsink.

Use Scenario: Automotive interior LED strip driver with PWM dimming and overcurrent protection.

IC Role / Device Role / Timing Role: High-side constant-current switch controlled by MCU GPIO; modulated at 1–10kHz for flicker-free dimming.

Use Value: Logic-level gate ensures full enhancement at 3.3V MCU output; RDS(on) stability over temperature maintains ±3% current accuracy.

Industrial Load SwitchUSB-C Power Delivery Load Switch

Use Scenario: 24V PLC I/O module output stage driving solenoid valves with inrush current limiting.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated body diode handling back-EMF during valve de-energization.

Use Value: 140mJ EAS withstands 4.6A inductive kickback without failure; SOA curve supports 100ms surge events.

Use Scenario: 5V/3A USB-C port power path management with hot-swap and short-circuit protection.

IC Role / Device Role / Timing Role: Low-RDS(on) load switch placed between source and connector; controlled by PD controller's enable signal.

Use Value: 0.031Ω RDS(on) limits voltage drop to <155mV at 5A, preserving VBUS regulation within ±5% tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LSD-13RDS(on) = 0.025Ω @ 4.5V (lower), but SOT-23-3 package limits ID to 3.8A and PD to 0.8WNot suitable for >3A continuous loads or >1W dissipation; lacks SOT-223 thermal tabSelect when board space is critical and current <3.5A; avoid for industrial load switching
SI2303DS-T1-GE3VDSS = 30V, RDS(on) = 0.055Ω @ 4.5V, SOT-23 package; lower Qg (12nC) but higher on-resistanceHigher conduction loss (1.2W at 4.6A) limits use to intermittent duty cyclesPrefer for battery-powered IoT nodes where gate drive energy matters more than steady-state loss

Compared with DMN3025LSD-13 and SI2303DS-T1-GE3, IRLL3303TR delivers superior thermal performance via its SOT-223 thermal tab and balances low RDS(on) with robust avalanche capability - making it optimal for sustained 4–5A industrial switching where reliability trumps minimal footprint.

Availability

IRLL3303TR is available at Aetrix Electronics and suitable for DC-DC converters, LED drivers, industrial load switches, and USB-C power delivery modules requiring stable component supply and long-term manufacturability.

Supply support for IRLL3303TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap device physics.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in industrial, computing, and consumer applications - emphasizing low RDS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRLL3303TR at 70°C ambient?

The maximum continuous drain current is 3.7A at TA = 70°C with VGS = 10V and standard FR-4 mounting. This reflects thermal derating from 4.6A at 25°C due to RθJA = 93°C/W; actual current depends on PCB copper area and airflow.

Can IRLL3303TR be driven directly by a 3.3V microcontroller GPIO?

Yes - its gate threshold voltage ranges from 1.0V to 2.5V, ensuring reliable turn-on with 3.3V logic. However, full enhancement (RDS(on) ≤ 0.045Ω) requires VGS ≥ 4.5V; for lowest loss, use a 5V gate driver or ensure sufficient gate charge (Qg = 34nC) delivery.

Does IRLL3303TR have avalanche capability, and how is it tested?

Yes - it is rated for 140mJ single-pulse avalanche energy (EAS) under standardized test conditions: VDD = 15V, L = 13mH, RG = 25Ω, IAS = 4.6A, pulse width ≤ 300µs. This validates ruggedness against inductive switching transients in relay and motor control.

What is the recommended PCB layout for thermal performance in SOT-223?

Maximize copper area connected to the exposed drain tab (pin 4) using multiple thermal vias to inner-layer ground planes. Minimum recommended footprint per datasheet is 12mm² copper; doubling this area reduces RθJA from 93°C/W to ~60°C/W, enabling 1.5W dissipation in still air.

IRLL3303TR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
31mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
840 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRLL3303TR FAQ

1.How can I place an order for IRLL3303TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL3303TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL3303TR reliable?

The price and inventory of IRLL3303TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL3303TR is usually 5 days.

3.What payment methods are accepted for IRLL3303TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL3303TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL3303TR?

IRLL3303TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL3303TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL3303TR?

For technical support, including IRLL3303TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL3303TR requirements.

6.How does Aetrix verify that IRLL3303TR is sourced from the original manufacturer or authorized distributors?

All IRLL3303TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL3303TR meets industry standards.

7.What is the process for return or replacement of IRLL3303TR?

All IRLL3303TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLL3303TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL3303TR part is unused and in its original packaging.

Return procedure for IRLL3303TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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