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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLL3303TRPBF

Name: IRLL3303TRPBF
Brand: Infineon Technologies
SKU: IRLL3303TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLL3303TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRLL3303TRPBF.pdf

Description:: MOSFET N-CH 30V 4.6A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:8,247

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Product details

Overview

IRLL3303TRPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 30V V_DSS, 4.6A continuous drain current at 25°C, and 0.031Ω R_DS(on) at V_GS = 10V. It integrates a robust body diode with 1.3V forward voltage and supports fast switching (t_r = 22ns, t_f = 28ns) in DC-DC converters and load-switching circuits.

For engineers reviewing the IRLL3303TRPBF datasheet, IRLL3303TRPBF pinout, IRLL3303TRPBF application, or IRLL3303TRPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.5V), thermal resistance (R_θJA = 93°C/W on FR-4), avalanche ruggedness (E_AS = 140mJ), and SOT-223 thermal performance enabling 1.0W dissipation in standard PCB mount.

Technical Context

This HEXFET device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining high dv/dt immunity (1.3V/ns) and fast intrinsic switching. Its gate charge profile (Q_g = 34nC typ., Q_gd = 10nC) enables efficient PWM control in high-frequency power stages.

The integrated body diode exhibits 65ns reverse recovery time and 160nC Q_rr, supporting synchronous rectification and inductive load handling. Thermal design leverages the SOT-223's enlarged copper tab, reducing R_θJA to 48°C/W on 1-inch² copper - critical for thermally constrained surface-mount applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage before avalanche; defines use in ≤24V nominal systems with margin.
R_DS(on) @ V_GS=10V	0.031Ω - Enables <145mW conduction loss at 4.6A, suitable for low-voltage, medium-current switching.
I_D @ T_A=25°C	4.6A - Continuous DC current rating under standard PCB mounting; derates linearly above 25°C.
Q_g	34nC - Total gate charge determines driver strength requirement; compatible with low-power microcontroller GPIOs.
t_r/t_f	22ns/28ns - Fast edge rates reduce switching losses in 100–500kHz SMPS designs.
E_AS	140mJ - Single-pulse avalanche energy rating ensures robustness against inductive turn-off transients.
R_θJA (FR-4)	93°C/W - Junction-to-ambient thermal resistance on minimum footprint; sets max. power before thermal shutdown.

Pinout & Package

SOT-223 (TO-261AA) surface-mount package with exposed drain tab for enhanced heatsinking; compatible with vapor-phase, infrared, and wave soldering. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Source (redundant).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Logic-level control input; threshold 1.0–2.5V enables direct drive from 3.3V/5V MCUs without level-shifting.
Pin 2 (D)	Drain	Main high-side or low-side switch node; electrically connected to exposed copper tab for thermal and electrical path to PCB ground plane.
Pins 3 & 4 (S)	Source	Power return path; dual-source pins reduce bond-wire inductance and improve current sharing in parallel configurations.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.5V ensures full enhancement with 3.3V I/O, eliminating external gate drivers in space-constrained designs.
Ultra-low R_DS(on)	0.031Ω at 10V reduces conduction loss by >40% vs. legacy SOT-223 MOSFETs, improving efficiency in battery-powered loads.
Fast switching speed	7.2ns turn-on delay + 22ns rise time enables stable operation up to 500kHz, minimizing dead-time losses in half-bridge topologies.
Enhanced thermal performance	SOT-223 tab delivers 48°C/W R_θJA on 1-inch² copper - 2× better than standard SOIC-8 equivalents for same footprint.
Avalanche-rated	140mJ single-pulse E_AS allows safe operation during unclamped inductive switching, reducing need for snubbers in relay/motor drivers.

Applications

DC-DC Buck Converter

USB Power Delivery Switch

Use Scenario: High-efficiency 5V-to-3.3V point-of-load regulator delivering up to 4A to FPGA core rails.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by PWM controller with 100–300kHz switching frequency.

Use Value: 0.031Ω R_DS(on) limits conduction loss to <500mW at 4A, enabling >92% efficiency without forced air cooling.

Use Scenario: USB-C port power path management with overcurrent protection and hot-swap capability.

IC Role / Device Role / Timing Role: Load switch enabling/disabling 5V/3A bus power under MCU control with soft-start via gate RC network.

Use Value: Logic-level gate allows direct 3.3V GPIO drive; 1.3V body diode forward drop minimizes reverse conduction loss during cable insertion.

LED Constant-Current Driver

Industrial Sensor Interface

Use Scenario: Dimmable 24V LED string driver using PWM-controlled constant-current sink.

IC Role / Device Role / Timing Role: Low-side current-regulating switch modulated at 1–10kHz to avoid audible noise.

Use Value: 28ns fall time ensures clean PWM edges; 4.6A rating supports multi-string configurations up to 12W per channel.

Use Scenario: Isolated analog sensor signal conditioning module requiring 24V field-side power switching.

IC Role / Device Role / Timing Role: Field-side load switch enabling/disabling 24V supply to pressure/temperature transducers.

Use Value: 30V V_DSS provides 20% margin over 24V rail; -55°C to +150°C operating range ensures reliability in industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(on) = 0.025Ω @ 4.5V (lower), but SOT-26 package has higher R_θJA (120°C/W on FR-4).	Better conduction loss at lower gate voltage; less suitable for thermally dense layouts due to inferior thermal pad.	Prefer when gate drive is limited to 4.5V and board space permits larger thermal relief.
SI2303DS-T1-GE3	R_DS(on) = 0.095Ω @ 4.5V (higher), V_DSS = 30V, SOT-23 package with no thermal tab.	Lower cost and smaller footprint, but limited to ≤1.5A continuous due to thermal constraints.	Select only for low-duty-cycle, low-current (<1.2A) switching where size outweighs efficiency.

Compared with DMN3025LSD-13 and SI2303DS-T1-GE3, IRLL3303TRPBF offers optimal balance of logic-level drive, thermal performance, and ruggedness - uniquely suited for 4–5A continuous SMT power switches where board-level heatsinking is constrained.

Availability

IRLL3303TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery switches, LED drivers, and industrial sensor interfaces requiring stable component supply and long-term manufacturability.

Supply support for IRLL3303TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in compact surface-mount formats - targeting power conversion, motor control, and load management in space- and thermal-constrained systems.

FAQ

Is IRLL3303TRPBF RoHS-compliant and lead-free?

Yes. The "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 marking. It uses lead-free matte tin plating on terminals and halogen-free molding compound, verified per IPC-J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30°C/60% RH).

Can IRLL3303TRPBF be used in high-side switching configurations?

No. As an N-channel MOSFET, it requires gate voltage ≥ source voltage to conduct. High-side use demands a gate driver capable of generating ≥30V above the source rail - impractical in most SOT-223 applications. It is optimized for low-side switching or synchronous rectification where source is grounded or at fixed potential.

What is the maximum recommended PCB copper area for optimal thermal performance?

For 1.0W continuous dissipation, a minimum 1-inch² (25.4mm × 25.4mm) 2-ounce copper pour connected directly to the drain tab is recommended. Larger areas further reduce R_θJA; doubling to 2-inch² lowers thermal resistance by ~15%, per IR's application note AN-1040.

Does IRLL3303TRPBF require external gate resistors for EMI control?

A 10–22Ω series gate resistor is recommended to dampen ringing caused by parasitic L_GS/C_iss resonance, especially at >200kHz switching. This improves EMI performance without significantly degrading t_r/t_f, as confirmed in Figure 10a/b of the official datasheet.

IRLL3303TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRLL3303TRPBF FAQ

1.How can I place an order for IRLL3303TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL3303TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL3303TRPBF reliable?

The price and inventory of IRLL3303TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL3303TRPBF is usually 5 days.

3.What payment methods are accepted for IRLL3303TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL3303TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL3303TRPBF?

IRLL3303TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL3303TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL3303TRPBF?

For technical support, including IRLL3303TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL3303TRPBF requirements.

6.How does Aetrix verify that IRLL3303TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLL3303TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL3303TRPBF meets industry standards.

7.What is the process for return or replacement of IRLL3303TRPBF?

All IRLL3303TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLL3303TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL3303TRPBF part is unused and in its original packaging.

Return procedure for IRLL3303TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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