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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML2502GTRPBF

Name: IRLML2502GTRPBF
Brand: Infineon Technologies
SKU: IRLML2502GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML2502GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML2502GTRPBF.pdf

Description:: MOSFET N-CH 20V 4.2A SOT23

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Product details

Overview

IRLML2502GTRPBF from Infineon Technologies (formerly International Rectifier) is an N-Channel enhancement-mode HEXFET® Power MOSFET in Micro3™ (SOT-23) package, optimized for low-voltage switching in battery-powered systems. It delivers 4.2 A continuous drain current at V_GS = 4.5 V, ultra-low R_DS(on) of 0.045 Ω max at 4.5 V, 20 V V_DS, and <1.1 mm profile - enabling compact load switching in portable electronics and PCMCIA cards.

For engineers reviewing the IRLML2502GTRPBF datasheet, IRLML2502GTRPBF pinout, IRLML2502GTRPBF application, or IRLML2502GTRPBF equivalent, key selection criteria include its thermally enhanced SOT-23 footprint, gate-threshold voltage range (0.6–1.2 V), fast switching (t_d(on) = 7.5 ns), body diode recovery (t_rr = 16–24 ns), and lead-free/halogen-free compliance per JEDEC TO-236AB.

Technical Context

This MOSFET operates as a single N-channel switch with logic-level gate drive compatibility down to 2.5 V, supporting direct interfacing with 3.3 V microcontrollers. Its R_DS(on) exhibits only +0.01 V/°C temperature coefficient and remains stable up to 150 °C junction temperature, ensuring predictable conduction loss across industrial ambient ranges.

The device integrates a monolithic source-drain body diode with V_SD = 1.2 V max and Q_rr = 8.6–13 nC, enabling synchronous rectification and flyback energy recovery in DC-DC converters. Thermal resistance R_θJA is 75 °C/W on FR-4 (2s2p copper), validated via transient impedance curves (Fig. 10) and SOA limits (Fig. 8).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports 12 V nominal battery rails with 67 % headroom for transients.
R_DS(on) @ 4.5 V	0.045 Ω max - Delivers ≤200 mW conduction loss at 4.2 A, critical for thermal budget in sealed enclosures.
I_D @ 25°C	4.2 A - Enables high-current load switching without external heatsinking in SOT-23 footprint.
Q_g	12 nC max - Allows efficient 1 MHz PWM control with <1 μs total switching time using 5 Ω gate driver.
t_r/t_f	10 ns / 26 ns - Minimizes switching losses in buck regulators and motor H-bridge half-bridges.
V_GS(th)	0.6–1.2 V - Ensures reliable turn-on with 1.8 V or 3.3 V GPIO, eliminating need for level-shifting circuitry.
T_J Range	−55 to +150 °C - Qualified for automotive cabin and industrial edge-node environments without derating.

Pinout & Package

IRLML2502GTRPBF uses the Micro3™ package - a thermally enhanced variant of SOT-23 (JEDEC TO-236AB) with exposed drain pad for improved heat dissipation. Dimensions: 2.9 mm × 1.6 mm × 1.1 mm (L × W × H), 3-pin surface-mount configuration.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal of N-channel MOSFET	Connected to ground or low-side return path; electrically tied to exposed drain pad via internal substrate for thermal coupling.
2 (Gate)	Control electrode	Accepts logic-level input (0.6–12 V); requires <100 nA leakage current and 12 nC total charge for full enhancement.
3 (Drain)	Power output terminal	High-current path to load; internally bonded to large copper pad for 75 °C/W R_θJA on standard FR-4 PCB.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.045 Ω @ 4.5 V enables ≥95 % efficiency in 3.3 V–12 V load switches below 5 A.
Micro3™ thermal enhancement	Exposed drain pad reduces R_θJA by 30 % vs. standard SOT-23, allowing 1.25 W dissipation at 25 °C ambient.
Fast body diode	16–24 ns t_rr and 8.6–13 nC Q_rr support synchronous rectification in 500 kHz–1 MHz DC-DC topologies.
Logic-level gate drive	V_GS(th) ≤1.2 V ensures full enhancement with 3.3 V MCU outputs, eliminating gate driver ICs.
Halogen-free & RoHS	Meets IPC-1752A Class 2 material declaration; compatible with lead-free reflow (260 °C peak).

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs (2.7–4.2 V).

IC Role / Device Role / Timing Role: Low-side current-sense switch controlling discharge path; responds within 100 ns to fault signals from protection ICs.

Use Value: 0.045 Ω R_DS(on) minimizes voltage drop during normal operation, preserving battery runtime and reducing thermal stress on PCB traces.

Use Scenario: Hot-swap power path control between USB-C port and system rail in portable devices.

IC Role / Device Role / Timing Role: Load switch enabling controlled inrush current limiting and reverse-current blocking.

Use Value: Fast 10 ns rise time and 26 ns fall time allow precise timing of power sequencing, preventing brownouts during plug/unplug events.

PCMCIA Card Power Management

Low-Voltage DC-DC Synchronous Rectifier

Use Scenario: Independent 3.3 V/5 V power enable for PCMCIA Type II peripheral cards in laptops.

IC Role / Device Role / Timing Role: High-side or low-side power switch with integrated thermal shutdown behavior.

Use Value: <1.1 mm height fits within 5.0 mm card thickness envelope; 150 °C T_J rating supports sustained 3.5 A loads without derating.

Use Scenario: Secondary-side synchronous rectification in 3.3 V output buck converters for SoC power supplies.

IC Role / Device Role / Timing Role: Body-diode-replacing switch driven by controller's complementary gate signal.

Use Value: 16–24 ns reverse recovery time and low Q_rr reduce cross-conduction losses, improving converter efficiency by 2–3 % over Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.042 Ω @ 4.5 V; slightly lower gate charge (10.5 nC); same SOT-23 package.	Optimized for higher-frequency switching (>2 MHz) due to lower C_iss (620 pF vs. 740 pF).	Select when minimizing gate drive power or operating above 1 MHz; verify layout parasitics for stability.
SI2302DS-T1-GE3	R_DS(on) = 0.055 Ω @ 4.5 V; higher V_GS(th) (1.0–2.5 V); same Micro3 footprint.	Less sensitive to noise-induced turn-on but requires stronger gate drive margin at low V_GS.	Prefer where system noise immunity is prioritized over minimal conduction loss; confirm 3.3 V MCU can guarantee >2.5 V gate swing.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, IRLML2502GTRPBF offers the best balance of ultra-low R_DS(on), fast switching, and robust thermal performance in the smallest SOT-23 variant - making it optimal for space-constrained battery management where conduction loss dominates efficiency.

Availability

IRLML2502GTRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, PCMCIA card power management, and low-voltage DC-DC synchronous rectifiers requiring stable component supply and long-term lifecycle continuity.

Supply support for IRLML2502GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with emphasis on energy efficiency and reliability.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and designed for high-efficiency, low-voltage switching in portable and space-constrained electronics.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRLML2502GTRPBF supports 3.4 A continuous drain current at T_A = 70°C with V_GS = 4.5 V, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating (0.01 W/°C) from the 1.25 W P_D at 25°C, and assumes standard FR-4 PCB mounting with 2s2p copper layers.

Does this MOSFET require a gate resistor for ESD protection?

No external gate resistor is required solely for ESD protection, as the device incorporates built-in gate oxide protection structures. However, a 5–10 Ω series gate resistor is recommended to dampen ringing and limit peak current during fast switching, especially when driven by low-impedance sources like microcontroller GPIOs.

Can IRLML2502GTRPBF be used in high-side switching configurations?

Yes, but only with appropriate gate drive voltage boosting - since it is an N-channel device, high-side operation requires V_GS ≥ 4.5 V relative to the source, which floats at the supply rail. A dedicated high-side driver or charge pump is necessary; for simpler high-side designs, consider P-channel alternatives like IRLML6302.

Is the Micro3™ package pin-compatible with standard SOT-23 footprints?

Yes - the Micro3™ package (JEDEC TO-236AB) uses identical pad layout and pin numbering (G-S-D) as standard SOT-23, enabling drop-in replacement on existing PCBs. However, its exposed drain pad requires matching copper pour on the PCB layer for optimal thermal performance, unlike generic SOT-23 variants.

IRLML2502GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML2502GTRPBF FAQ

1.How can I place an order for IRLML2502GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML2502GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML2502GTRPBF reliable?

The price and inventory of IRLML2502GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML2502GTRPBF is usually 5 days.

3.What payment methods are accepted for IRLML2502GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML2502GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML2502GTRPBF?

IRLML2502GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML2502GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML2502GTRPBF?

For technical support, including IRLML2502GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML2502GTRPBF requirements.

6.How does Aetrix verify that IRLML2502GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLML2502GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML2502GTRPBF meets industry standards.

7.What is the process for return or replacement of IRLML2502GTRPBF?

All IRLML2502GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLML2502GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML2502GTRPBF part is unused and in its original packaging.

Return procedure for IRLML2502GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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