Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRLML2803TRPBF

Part No.:
IRLML2803TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixIRLML2803TRPBF.pdf
Description:
MOSFET N-CH 30V 1.2A SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:830

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRLML2803TRPBF from Infineon Technologies is a 30 V, 3.9 A N-channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, optimized for low-voltage switching in portable power management and load switching applications. It features 45 mΩ RDS(on) at VGS = 10 V, ±20 V gate voltage rating, and 1.2 mJ single-pulse avalanche energy - enabling robust operation in battery-powered DC-DC converters and USB power switches.

For engineers reviewing the IRLML2803TRPBF datasheet, IRLML2803TRPBF pinout, IRLML2803TRPBF application, or IRLML2803TRPBF equivalent, key selection criteria include its 45 mΩ on-resistance at 4.5 V gate drive, 230 °C/W junction-to-ambient thermal resistance, SOT-23 footprint compatibility, and verified performance under 0.91 A continuous drain current at 70 °C ambient.

Technical Context

This logic-level MOSFET uses planar HEXFET® technology with optimized channel geometry to achieve low RDS(on) while maintaining fast switching (td(on) = 10 ns, tf = 11 ns) and low gate charge (QG = 4.3 nC). Its body diode exhibits 1.4 V forward drop at 0.91 A and supports unclamped inductive switching up to 0.9 A.

The device operates within -55 °C to +150 °C junction temperature range and is characterized for stable performance at VGS as low as 3.0 V - making it suitable for direct interfacing with 3.3 V microcontrollers without level-shifting circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum drain-source blocking voltage compatible with 24 V rail systems and automotive 12 V battery inputs.
RDS(on) @ VGS = 4.5 V 65 mΩ - Enables ≥92% efficiency in 3.3 V–5 V logic-driven load switches at ≤1 A load current.
ID Continuous @ TA = 70 °C 3.0 A - Sustains 3 A load current in standard PCB layouts without forced air cooling.
QG 4.3 nC - Reduces gate driver power loss and enables <100 kHz PWM operation with minimal drive strength.
EAS 1.2 mJ - Supports reliable operation in inductive load switching (e.g., solenoids, relays) without external snubbers.
RθJA 230 °C/W - Defines thermal derating limit: max 3.0 A continuous current requires ≤70 °C ambient or enhanced copper pour.

Pinout & Package

IRLML2803TRPBF is housed in Micro3™ package (JEDEC TO-236AB / SOT-23), a surface-mount plastic case with 3 leads and 1.9 mm × 1.3 mm footprint. The package supports reflow soldering per J-STD-020 and has 0.95 mm lead pitch.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control input Accepts 0–10 V logic-level signals; threshold voltage VGS(th) = 1.0–2.4 V ensures turn-on with 3.3 V MCU outputs.
2 (Source) Reference node Connected to system ground or low-side return path; forms common reference for gate drive and current sensing.
3 (Drain) Power output Switches load current to VIN; rated for 30 V blocking and 3.9 A pulsed current (IDM).

Key Features

Feature Design Value
Logic-level gate drive Guaranteed turn-on at VGS = 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V systems.
Low RDS(on) at 4.5 V 65 mΩ - minimizes conduction loss in battery-powered devices where every milliwatt affects runtime.
Fast switching speed trd = 10 ns, tf = 11 ns - reduces transition losses in high-frequency DC-DC control loops.
Robust avalanche capability EAS = 1.2 mJ - withstands inductive kickback in relay/solenoid drivers without external protection.
Halogen-free & RoHS-compliant Meets IPC-1752A material declaration requirements for industrial and medical end equipment.

Applications

USB Power Switching Portable DC-DC Converter Control

Use Scenario: Enabling/disabling VBUS power in USB 2.0 host ports with overcurrent protection.

IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V supply path with fast turn-off (<50 ns) to meet USB suspend timing.

Use Value: 65 mΩ RDS(on) limits voltage drop to <65 mV at 1 A, preserving bus compliance while supporting hot-plug detection.

Use Scenario: Synchronous rectification in buck converter secondary side for wearables and IoT sensors.

IC Role / Device Role / Timing Role: High-efficiency freewheeling switch replacing Schottky diode; driven by controller's complementary output.

Use Value: 1.4 V body diode forward drop and low QG reduce conduction and switching losses versus discrete diode solutions.

Smartphone Battery Protection Industrial Sensor Node Load Switching

Use Scenario: Isolating backup battery from main PMIC during fault conditions or deep sleep mode.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between battery cathode and system ground.

Use Value: Integrated body diode blocks reverse current flow; 30 V rating accommodates Li-ion stack voltages up to 12.6 V.

Use Scenario: Power gating of wireless transceivers (BLE, LoRa) in remote environmental monitoring nodes.

IC Role / Device Role / Timing Role: Controlled power rail enable switch activated by microcontroller GPIO with minimal leakage.

Use Value: 1 μA max IDSS at 25 °C ensures <1 μW standby loss - critical for multi-year battery life in field-deployed sensors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LK-7 RDS(on) = 48 mΩ @ 4.5 V; higher QG = 5.8 nC; same SOT-23 package. Better conduction loss but slower switching - preferred in static load switching over high-frequency PWM. Select when lowest on-resistance at 4.5 V is prioritized over gate drive simplicity.
SI2302DS-T1-GE3 RDS(on) = 75 mΩ @ 4.5 V; lower EAS = 0.4 mJ; same pinout and footprint. Reduced avalanche margin - unsuitable for inductive loads without external clamping. Choose only for purely resistive or capacitive loads where cost sensitivity outweighs ruggedness needs.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, IRLML2803TRPBF delivers balanced trade-offs: mid-range RDS(on), proven avalanche robustness, and minimal gate drive demand - making it optimal for general-purpose logic-level switching where reliability and design simplicity are co-prioritized.

Availability

IRLML2803TRPBF is available at Aetrix Electronics and suitable for USB power delivery, portable DC-DC converters, and industrial sensor node load switching requiring stable component supply across production lifecycles.

Supply support for IRLML2803TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This MOSFET belongs to Infineon's HEXFET® logic-level power transistor product line, engineered specifically for efficient, compact, and reliable low-voltage switching in space-constrained portable and battery-operated systems.

FAQ

What is the maximum continuous drain current at 25°C ambient?

The IRLML2803TRPBF supports 3.9 A continuous drain current at TA = 25°C with VGS = 10 V, limited by package thermal resistance (RθJA = 230 °C/W) and silicon safe operating area. At elevated ambient temperatures, derating applies: 3.0 A maximum at 70°C ambient per datasheet absolute ratings table.

Can this MOSFET be driven directly by a 3.3 V microcontroller GPIO?

Yes - the device has guaranteed turn-on at VGS = 3.0 V and typical threshold voltage of 1.4 V. With 3.3 V drive, RDS(on) is approximately 85 mΩ, sufficient for ≤500 mA loads. For full 3.9 A capability, 4.5 V or higher gate voltage is required per the RDS(on) vs. VGS curve on page 7 of the datasheet.

Does IRLML2803TRPBF have integrated ESD protection?

No - the device does not include on-chip ESD protection diodes. Per datasheet Figure 1 and Absolute Maximum Ratings, gate-source voltage must remain within ±20 V. External 10 kΩ series resistor and/or TVS diode is recommended for handling >2 kV HBM ESD events in board-level designs.

Is the Micro3™ package compatible with standard SOT-23 pick-and-place equipment?

Yes - the Micro3™ (SOT-23) package conforms to JEDEC TO-236AB outline and matches standard SOT-23 land patterns. Footprint dimensions (1.9 mm × 1.3 mm, 0.95 mm pitch) align with IPC-7351B "SOIC_N" generic SOT-23 template, ensuring compatibility with automated assembly systems using 0.5 mm nozzle and vision-guided placement.

IRLML2803TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
250mOhm @ 910mA, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
85 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
540mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Micro3™/SOT-23

IRLML2803TRPBF FAQ

1.How can I place an order for IRLML2803TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML2803TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML2803TRPBF reliable?

The price and inventory of IRLML2803TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML2803TRPBF is usually 5 days.

3.What payment methods are accepted for IRLML2803TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML2803TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML2803TRPBF?

IRLML2803TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML2803TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML2803TRPBF?

For technical support, including IRLML2803TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML2803TRPBF requirements.

6.How does Aetrix verify that IRLML2803TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLML2803TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML2803TRPBF meets industry standards.

7.What is the process for return or replacement of IRLML2803TRPBF?

All IRLML2803TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLML2803TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML2803TRPBF part is unused and in its original packaging.

Return procedure for IRLML2803TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRLML2803TRPBF Tags

  • IRLML2803TRPBF
  • IRLML2803TRPBF PDF
  • IRLML2803TRPBF Datasheet
  • IRLML2803TRPBF Specifications
  • IRLML2803TRPBF Images
  • Infineon Technologies
  • Infineon Technologies IRLML2803TRPBF
  • Buy IRLML2803TRPBF
  • IRLML2803TRPBF Price
  • IRLML2803TRPBF Distributor
  • IRLML2803TRPBF Supplier
  • IRLML2803TRPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER