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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML5103GTRPBF

Name: IRLML5103GTRPBF
Brand: Infineon Technologies
SKU: IRLML5103GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML5103GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML5103GTRPBF.pdf

Description:: MOSFET P-CH 30V 0.76A SOT-23-3

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Product details

Overview

IRLML5103GTRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, rated for -20 V V_DS, -3.8 A continuous drain current at T_A = 25°C, 0.095 Ω R_DS(on) at V_GS = –4.5 V, and optimized for low-voltage load switching in portable power management circuits.

For engineers reviewing the IRLML5103GTRPBF datasheet, IRLML5103GTRPBF pinout, IRLML5103GTRPBF application, or IRLML5103GTRPBF equivalent, key selection criteria include gate threshold voltage (–0.7 V typ), body diode forward voltage (–0.85 V at –0.6 A), SOA compliance under pulsed conditions, and thermal resistance (R_θJA = 200°C/W).

Technical Context

This device operates as a single P-channel silicon MOSFET with fully characterized safe operating area (SOA) up to 10 ms pulses, integrated body diode with reverse recovery time t_rr = 45 ns, and gate charge Q_G = 4.2 nC at V_GS = –10 V. It supports logic-level drive down to –3.0 V V_GS.

Its Micro3™ package enables surface-mount assembly on space-constrained PCBs, with validated thermal performance under natural convection and defined solder pad footprint per JEDEC TO-236AB. The device exhibits normalized R_DS(on) drift of ≤1.2× from 25°C to 150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–20 V - maximum blocking voltage before avalanche breakdown; defines upper limit for battery-side switch applications
R_DS(on) @ V_GS = –4.5 V	0.095 Ω - determines conduction loss and self-heating at 1 A load (I²R = 95 mW)
I_D (continuous)	–3.8 A @ T_A = 25°C - usable current capacity without heatsink in ambient air
V_GS(th)	–0.7 V (typ), –1.2 V (max) - ensures reliable turn-on with 3.3 V microcontroller GPIO
Q_G	4.2 nC @ V_GS = –10 V - sets minimum gate driver current requirement for 100 ns switching
R_θJA	200°C/W - predicts 76°C junction rise above ambient at full 3.8 A DC load
t_r/t_f	12 ns / 15 ns @ R_G = 0 Ω - defines minimum achievable switching transition time

Pinout & Package

IRLML5103GTRPBF uses the Micro3™ (SOT-23 / TO-236AB) package: 3-pin, surface-mount, plastic molded, with gull-wing leads and JEDEC-compliant footprint (EIA-481 tape-and-reel compatible). Dimensions: 2.9 mm × 1.3 mm × 1.0 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal of P-channel MOSFET	Connected to higher potential (e.g., battery +); carries full load current into channel
2 (Gate)	Control electrode	Receives negative gate drive relative to source; threshold confirmed at –0.7 V
3 (Drain)	Output/switching node	Connected to load; voltage swings between source and ground during operation

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on with –3.0 V V_GS; eliminates need for level-shifting circuitry in 3.3 V systems
Low R_DS(on) at –4.5 V	0.095 Ω enables <100 mW conduction loss at 1 A, reducing thermal design burden
Fast switching transitions	t_r/t_f = 12/15 ns allows >5 MHz PWM operation with minimal switching loss
Qualified per JEDEC JESD47	Validated for 1000-cycle temperature cycling and 1000-hour HTOL at 150°C junction
Halogen-free & RoHS compliant	Meets IPC-1752A material declaration requirements for environmental compliance

Applications

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlled by protection IC's discharge FET driver output.

Use Value: 0.095 Ω R_DS(on) limits voltage drop to <380 mV at 4 A, preserving pack efficiency and runtime.

Use Scenario: Hot-swap enable/disable of USB 5 V bus to peripheral devices.

IC Role / Device Role / Timing Role: Load switch isolating downstream ports during insertion/removal events.

Use Value: Fast 12 ns rise time ensures <100 ns response to enable signal, preventing inrush spikes.

Smartphone Backlight Dimming

IoT Sensor Node Power Gating

Use Scenario: PWM-controlled current sink for white LED strings in compact handheld displays.

IC Role / Device Role / Timing Role: Low-side switch (drain grounded) modulating LED current via duty cycle.

Use Value: 4.2 nC gate charge enables direct drive from 3.3 V MCU PWM pins without external buffer.

Use Scenario: Periodic shutdown of non-critical sensors (e.g., humidity, motion) to extend battery life.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load power gate enabling/disabling sensor supply rails.

Use Value: Gate leakage <100 nA ensures <1 μA total system standby current when off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2013LFG-7	R_DS(on) = 0.11 Ω @ –4.5 V; V_GS(th) = –0.9 V max; SOT-23 package	Slightly higher conduction loss; identical pinout and footprint	Select if tighter V_GS(th) distribution required for margin-critical 3.0 V systems
SI2301DS-T1-BE3	R_DS(on) = 0.12 Ω @ –4.5 V; Q_G = 3.6 nC; same Micro3™ package	Lower gate charge reduces driver loading but increases I²R loss at high current	Prefer for ultra-low-power wake-up switching where gate drive energy dominates loss budget

Compared with IRLML5103GTRPBF, DMN2013LFG-7 offers tighter threshold control at cost of 16% higher R_DS(on), while SI2301DS-T1-BE3 trades 26% higher on-resistance for 14% lower gate charge-favoring low-duty-cycle gating over continuous load handling.

Availability

IRLML5103GTRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, smartphone backlight dimming, and IoT sensor node power gating requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRLML5103GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's OptiMOS™ P-channel logic-level MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC and load-switching applications in portable and battery-powered systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 150°C. Continuous operation at this temperature requires derating I_D to ≤1.2 A based on R_θJA = 200°C/W and ambient ≤25°C. Thermal simulation using the provided transient impedance curve (Z_thJA) is recommended for pulsed loads exceeding 10 ms.

Can IRLML5103GTRPBF be used in linear (analog) regulation mode?

No-it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) graph explicitly excludes DC and long-pulse operation above 10 ms at high V_DS/I_D combinations. Use only in saturated switching mode with proper SOA margining per Figure 1 in the datasheet.

Is the body diode suitable for reverse polarity protection?

Yes-the integrated body diode has V_SD = –0.85 V at –0.6 A and t_rr = 45 ns, making it effective for reverse-voltage blocking in low-current (<1 A) applications. For higher reverse currents, add an external Schottky diode in parallel to reduce forward drop and improve efficiency.

Does the marking 'D' on the top of the package correspond to IRLML5103GTRPBF?

Yes-per Infineon's Micro3™ marking code table (page 7 of datasheet), the letter 'D' in the top-side laser marking identifies the part number IRLML5103. The full marking includes year-week code (e.g., '24A') and halogen-free indicator line above the week code.

IRLML5103GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 760mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 75 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 540mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML5103GTRPBF FAQ

1.How can I place an order for IRLML5103GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML5103GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML5103GTRPBF reliable?

The price and inventory of IRLML5103GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML5103GTRPBF is usually 5 days.

3.What payment methods are accepted for IRLML5103GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML5103GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML5103GTRPBF?

IRLML5103GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML5103GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML5103GTRPBF?

For technical support, including IRLML5103GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML5103GTRPBF requirements.

6.How does Aetrix verify that IRLML5103GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLML5103GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML5103GTRPBF meets industry standards.

7.What is the process for return or replacement of IRLML5103GTRPBF?

All IRLML5103GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLML5103GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML5103GTRPBF part is unused and in its original packaging.

Return procedure for IRLML5103GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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