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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML5203GTRPBF

Name: IRLML5203GTRPBF
Brand: Infineon Technologies
SKU: IRLML5203GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML5203GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML5203GTRPBF.pdf

Description:: MOSFET P-CH 30V 3A SOT-23-3

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Product details

Overview

IRLML5203GTRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, rated for -30 V V_DS, 98 mΩ R_DS(on) at V_GS = -10 V and I_D = -3.0 A, with -1.0 to -2.5 V gate threshold voltage. It serves as a low-side load switch in portable battery-powered systems requiring compact, low-profile power control.

For engineers reviewing the IRLML5203GTRPBF datasheet, IRLML5203GTRPBF pinout, IRLML5203GTRPBF application, or IRLML5203GTRPBF equivalent, key selection criteria include verified -30 V breakdown rating, 98 mΩ on-resistance at -10 V gate drive, thermal resistance of 100 °C/W, body diode forward voltage of -1.2 V at -1.3 A, and compatibility with 3.3 V/5 V logic-level gate control in space-constrained PCB layouts.

Technical Context

This device operates as a normally-off P-channel switch with gate-controlled conduction between drain and source. Its low R_DS(on) and optimized gate charge (Q_g = 9.5 nC typ.) enable efficient switching in DC-DC load management and reverse polarity protection circuits.

The integrated body diode supports bidirectional current handling in battery backup paths and hot-swap applications. Thermal performance is defined by R_θJA = 100 °C/W on FR-4 board, with junction temperature range from -55 °C to +150 °C and linear derating factor of 10 mW/°C above 70 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-to-source blocking voltage for reliable operation in 24 V rail and automotive battery systems
R_DS(on)	98 mΩ @ V_GS = -10 V, I_D = -3.0 A - Enables <100 mW conduction loss at 1 A load current
I_D (25°C)	-3.0 A - Continuous drain current capability sufficient for USB-C PD load switches and LED drivers
V_GS(th)	-1.0 to -2.5 V - Ensures full enhancement with standard 3.3 V logic-level gate drive
Q_g	9.5 nC (typ.) - Supports fast turn-on/turn-off with minimal gate driver power demand
R_θJA	100 °C/W - Defines thermal limit for surface-mount operation on standard FR-4 without heatsink
V_SD	-1.2 V @ I_S = -1.3 A - Confirmed forward voltage of integrated body diode for reverse-current path design

Pinout & Package

IRLML5203GTRPBF uses the Micro3™ package (JEDEC TO-236AB), a thermally enhanced variant of SOT-23 with large thermal pad and low profile (<1.1 mm). The package enables high power density in ultra-thin applications such as PCMCIA cards and wearables.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts negative gate voltage relative to source to turn on P-channel conduction
2 (Drain)	High-side current path	Connected to positive supply rail in high-side switch configuration or load return in low-side configuration
3 (Source)	Reference node	Biased at system ground or battery positive; defines gate drive reference and body diode anode

Key Features

Feature	Design Value
Ultra-low R_DS(on)	98 mΩ at -10 V gate drive - reduces I²R losses in battery discharge paths
Logic-level gate drive	V_GS(th) max -2.5 V - ensures full enhancement with 3.3 V microcontroller outputs
Low-profile Micro3™ package	Height <1.1 mm - fits within 1.6 mm PCB stack-ups for portable electronics
Lead-free & halogen-free	RoHS-compliant construction - meets IPC-J-STD-020 moisture sensitivity level 1
Integrated body diode	V_SD = -1.2 V @ -1.3 A - enables freewheeling in inductive load switching without external diode

Applications

USB Power Delivery Switching

Reverse Polarity Protection

Use Scenario: Controlling 5–20 V power routing in USB-C receptacles with dynamic voltage negotiation.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as bidirectional load switch with integrated body diode for VBUS path control.

Use Value: 98 mΩ R_DS(on) limits voltage drop to <300 mV at 3 A, preserving PD compliance margins.

Use Scenario: Preventing damage from incorrect battery insertion in handheld medical devices.

IC Role / Device Role / Timing Role: High-side P-channel switch placed between battery terminal and system ground plane.

Use Value: -30 V V_DS rating withstands 24 V battery transients; -2.5 V V_GS(th) ensures reliable turn-on with simple resistor divider bias.

PCMCIA Card Power Control

Low-Power IoT Sensor Node Load Switch

Use Scenario: Enabling/disabling 3.3 V peripherals in legacy PCMCIA expansion slots with strict height constraints.

IC Role / Device Role / Timing Role: Compact P-channel MOSFET used as hot-swap controller with controlled inrush limiting.

Use Value: Micro3™ footprint (2.9 × 1.3 mm) and <1.1 mm height meet PCMCIA mechanical envelope requirements.

Use Scenario: Isolating BLE radio, accelerometer, and flash memory during deep sleep in battery-operated sensor nodes.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch enabling sub-µA system standby current.

Use Value: Gate leakage <±100 nA at ±20 V ensures no measurable drain on coin-cell batteries over shelf life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LK-7	R_DS(on) = 110 mΩ @ -4.5 V; higher Q_g (12 nC)	Optimized for 4.5 V gate drive; less suitable for 3.3 V logic	Prefer when gate drive is ≥4.5 V and lower cost is prioritized over minimal conduction loss
SI2301BDS-T1-GE3	R_DS(on) = 115 mΩ @ -4.5 V; R_θJA = 125 °C/W	Higher thermal resistance limits continuous current in confined layouts	Select only if footprint compatibility with existing SI23xx designs is required and power dissipation remains below 0.5 W

Compared with DMN2053LK-7 and SI2301BDS-T1-GE3, IRLML5203GTRPBF delivers superior R_DS(on) at 3.3 V gate drive and lowest thermal resistance in SOT-23, making it optimal for space- and efficiency-critical battery-switching roles where gate voltage headroom is limited.

Availability

IRLML5203GTRPBF is available at Aetrix Electronics and suitable for USB-C PD modules, portable medical devices, PCMCIA interface cards, and low-power IoT sensor nodes requiring stable component supply across production lifecycles.

Supply support for IRLML5203GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensing, and connectivity solutions for industrial, automotive, and consumer markets.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC power control in battery-powered and portable electronics.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRLML5203GTRPBF supports -2.4 A continuous drain current at T_A = 70°C with V_GS = -10 V. This value reflects thermal derating from the 25°C rating of -3.0 A, based on its 100 °C/W junction-to-ambient thermal resistance and 1.25 W power dissipation limit at 25°C.

Can this MOSFET be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage range (-1.0 V to -2.5 V) ensures full enhancement with 3.3 V logic. At V_GS = -3.3 V, R_DS(on) rises to ~165 mΩ (at -2.6 A), which remains acceptable for low-duty-cycle or low-current applications like sensor power gating.

Does the device include an integrated body diode, and what is its forward voltage?

Yes, it features an integral source-drain p-n junction diode. At T_J = 25°C and I_S = -1.3 A with V_GS = 0 V, the forward voltage is -1.2 V. This diode supports freewheeling in inductive loads and reverse-current paths without external components.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_J = 25°C, the SOA limits drain current to approximately -4.5 A at -15 V V_DS. This boundary is defined by R_DS(on) conduction and transient thermal impedance, not peak avalanche energy - the device is not rated for repetitive avalanche operation.

IRLML5203GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 98mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML5203GTRPBF FAQ

1.How can I place an order for IRLML5203GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML5203GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML5203GTRPBF reliable?

The price and inventory of IRLML5203GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML5203GTRPBF is usually 5 days.

3.What payment methods are accepted for IRLML5203GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML5203GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML5203GTRPBF?

IRLML5203GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML5203GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML5203GTRPBF?

For technical support, including IRLML5203GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML5203GTRPBF requirements.

6.How does Aetrix verify that IRLML5203GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLML5203GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML5203GTRPBF meets industry standards.

7.What is the process for return or replacement of IRLML5203GTRPBF?

All IRLML5203GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLML5203GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML5203GTRPBF part is unused and in its original packaging.

Return procedure for IRLML5203GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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