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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML6302GTRPBF

Name: IRLML6302GTRPBF
Brand: Infineon Technologies
SKU: IRLML6302GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML6302GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML6302GTRPBF.pdf

Description:: MOSFET P-CH 20V 780MA SOT23-3

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Product details

Overview

IRLML6302GTRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in Micro3 (SOT-23) package, rated for -20 V V_DS, 3.5 A continuous drain current at T_J = 25°C, and 0.09 Ω R_DS(on) at V_GS = −4.5 V. It serves as a low-side load switch in portable power management circuits, supporting battery-powered logic-level gate drive with fast switching and integrated body diode.

For engineers reviewing the IRLML6302GTRPBF datasheet, IRLML6302GTRPBF pinout, IRLML6302GTRPBF application, or IRLML6302GTRPBF equivalent, key selection criteria include verified R_DS(on) at −4.5 V, pulsed source current capability of −6.1 A, reverse recovery time ≤53 ns, and thermal resistance R_θJA = 200°C/W in standard PCB layout.

Technical Context

This device operates as a voltage-controlled unidirectional power switch with a built-in body diode enabling synchronous rectification or reverse polarity protection. Its gate threshold voltage V_GS(th) ranges from −0.45 V to −1.2 V, ensuring reliable turn-on with 3.3 V or 5 V logic controllers.

The MOSFET exhibits normalized R_DS(on) variation <1.5× across −55°C to +150°C junction temperature, and its Q_g = 4.7 nC at V_DS = −16 V supports efficient high-frequency PWM control in DC-DC converters and LED drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage for low-voltage reverse-polarity or hot-swap protection
R_DS(on)	0.09 Ω @ V_GS = −4.5 V - Enables <150 mW conduction loss at 1.3 A load current
I_D (cont)	−3.5 A @ T_A = 25°C - Sustains typical USB-powered peripheral loads without heatsink
Q_g	4.7 nC @ V_DS = −16 V - Supports >1 MHz switching with <100 ns turn-on delay using 10 mA gate driver
V_GS(th)	−0.45 V to −1.2 V - Ensures full enhancement with 3.3 V microcontroller GPIO
trr	35–53 ns - Limits reverse-recovery energy loss during inductive load commutation
R_θJA	200°C/W - Requires minimum 25 mm² copper pour for 1.5 A continuous operation at 70°C ambient

Pinout & Package

IRLML6302GTRPBF uses the Micro3 (SOT-23/TO-236AB) surface-mount package: 3-pin, single-row, gull-wing leads, 1.9 mm × 1.6 mm footprint, 0.95 mm height, JEDEC-compliant outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts logic-level voltage; requires no level-shifting for 3.3 V MCU interface
2 (Drain)	Power output terminal	Connected to load return path; carries full switched current and body-diode reverse current
3 (Source)	Reference node	Bonded to PCB ground plane; defines gate-source reference and enables low-side switching topology

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = −3.0 V, compatible with 3.3 V system rails
Low R_DS(on)	0.09 Ω at −4.5 V reduces I²R losses by >40% vs. legacy P-ch devices in same package
Fast body diode	trr ≤53 ns and Q_rr ≤39 nC minimize shoot-through risk in half-bridge configurations
Halogen-free & RoHS	Complies with IPC-1752A material declaration requirements for consumer and industrial end equipment

Applications

USB Power Switching

LED Backlight Control

Use Scenario: Enabling/disabling 5 V USB VBUS to downstream peripherals in portable hubs.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with fast turn-off to prevent backfeed.

Use Value: 0.09 Ω R_DS(on) limits voltage drop to <450 mV at 5 V/0.5 A, preserving USB spec compliance.

Use Scenario: PWM dimming of white LEDs in handheld displays using constant-current sink topology.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck-derived current sink, conducting during off-phase.

Use Value: 35 ns trr ensures minimal dead-time penalty and <2% efficiency loss at 10 kHz PWM frequency.

Reverse Polarity Protection

Hot-Swap Circuitry

Use Scenario: Preventing damage from incorrect battery insertion in rechargeable medical sensors.

IC Role / Device Role / Timing Role: Series pass element with body diode oriented to block reverse voltage while passing forward current.

Use Value: −20 V V_DS rating withstands transient spikes up to ±15 V without avalanche breakdown.

Use Scenario: Controlled power-up of FPGA I/O banks during board insertion into live backplane.

IC Role / Device Role / Timing Role: Inrush limiter via controlled gate ramp, reducing peak surge current during capacitive load charging.

Use Value: Gate charge Q_g = 4.7 nC allows precise RC-based slew-rate control with <10 µs rise time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2023LSD-13	R_DS(on) = 0.11 Ω @ −4.5 V; higher Q_g = 6.2 nC	Slightly higher conduction loss but better SOA for repetitive pulse stress	Preferred where robustness under short-circuit conditions outweighs efficiency priority
SI2301BDS-T1-GE3	R_DS(on) = 0.12 Ω @ −4.5 V; V_GS(th) max = −1.0 V	Narrower gate threshold range may reduce noise immunity in noisy environments	Selected when cost sensitivity dominates over marginal R_DS(on) and thermal margin

Compared with DMN2023LSD-13 and SI2301BDS-T1-GE3, IRLML6302GTRPBF delivers lowest on-resistance and tightest V_GS(th) distribution, making it optimal for space-constrained, battery-sensitive designs requiring minimal gate drive overhead and maximum efficiency at light-to-moderate loads.

Availability

IRLML6302GTRPBF is available at Aetrix Electronics and suitable for USB power switching, LED backlight control, reverse polarity protection, and hot-swap circuitry requiring stable component supply across production lifecycles.

Supply support for IRLML6302GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

IRLML6302GTRPBF belongs to Infineon's StrongIRFET™ family-designed specifically for high-efficiency, low-voltage DC-DC conversion and compact load-switching applications in portable and IoT edge devices.

FAQ

What is the maximum safe operating junction temperature for IRLML6302GTRPBF?

The absolute maximum junction temperature is +150°C per the official Infineon datasheet. Derating begins above +125°C ambient when mounted on a standard 1-inch² FR-4 PCB with 1 oz copper; sustained operation above +135°C junction requires thermal vias or increased copper area to maintain R_θJA ≤150°C/W.

Can IRLML6302GTRPBF be used in a high-side configuration?

No-it is not suitable for high-side switching without external level-shifting circuitry. As a P-channel device with source tied to V_IN, gate must be driven below source potential to turn on; standard 3.3 V logic cannot achieve sufficient V_GS swing when source is at 5 V or higher, risking incomplete enhancement and excessive heating.

Does IRLML6302GTRPBF have avalanche energy rating (E_AS) specified?

No-Infineon does not specify single-pulse avalanche energy (E_AS) for this part. The device is not characterized for repetitive avalanche operation; design must ensure V_DS never exceeds −20 V under any condition, including inductive kickback, using clamping or snubbing networks where necessary.

Is the body diode suitable for continuous freewheeling current?

Yes-the body diode supports continuous reverse current up to −0.61 A at T_J = 25°C, with V_SD = −1.2 V. For sustained freewheeling, limit average diode conduction time and verify junction temperature remains below 125°C using thermal simulation or measurement, as diode conduction increases total power dissipation beyond R_DS(on)-only estimates.

IRLML6302GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 780mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 610mA, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.6 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 97 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 540mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML6302GTRPBF FAQ

1.How can I place an order for IRLML6302GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML6302GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML6302GTRPBF reliable?

The price and inventory of IRLML6302GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML6302GTRPBF is usually 5 days.

3.What payment methods are accepted for IRLML6302GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML6302GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML6302GTRPBF?

IRLML6302GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML6302GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML6302GTRPBF?

For technical support, including IRLML6302GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML6302GTRPBF requirements.

6.How does Aetrix verify that IRLML6302GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLML6302GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML6302GTRPBF meets industry standards.

7.What is the process for return or replacement of IRLML6302GTRPBF?

All IRLML6302GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLML6302GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML6302GTRPBF part is unused and in its original packaging.

Return procedure for IRLML6302GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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