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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML6302TRPBF

Name: IRLML6302TRPBF
Brand: Infineon Technologies
SKU: IRLML6302TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML6302TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML6302TRPBF.pdf

Description:: MOSFET P-CH 20V 780MA SOT23

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLML6302TRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, rated for −20 V V_DS, 3.7 A I_D (T_J = 25°C), 45 mΩ R_DS(on) @ V_GS = −4.5 V, and −1.2 V V_SD body diode forward voltage. It serves as a low-side load switch in portable power management circuits.

For engineers reviewing the IRLML6302TRPBF datasheet, IRLML6302TRPBF pinout, IRLML6302TRPBF application, or IRLML6302TRPBF equivalent, key selection criteria include its logic-level gate drive compatibility (−2.5 V threshold), low R_DS(on) at 3.3 V systems, fast 35 ns t_rr, and SOT-23 footprint suitability for space-constrained battery-powered designs.

Technical Context

This MOSFET operates in enhancement mode with a negative gate threshold voltage (V_GS(th) = −1.0 to −2.5 V), enabling direct interface with 3.3 V microcontroller GPIOs. Its integrated body diode supports reverse current conduction in buck converters and H-bridge freewheeling paths.

The device uses trench-gate technology to achieve low on-resistance and high transconductance (g_fs = 8.5 S typ). Thermal resistance R_θJA is 160°C/W (standard PCB layout), limiting continuous power dissipation to ~0.4 W at T_A = 25°C without heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum drain-to-source blocking voltage in reverse polarity applications
R_DS(on)	45 mΩ @ V_GS = −4.5 V - Enables ≤165 mW conduction loss at 0.61 A load current
I_D (continuous)	3.7 A @ T_J = 25°C - Supports typical USB-powered peripheral switching loads
V_GS(th)	−1.0 to −2.5 V - Ensures full enhancement with 3.3 V logic-level gate drive
t_rr	35 ns (typ) - Minimizes switching losses and EMI in 100–500 kHz DC/DC topologies
Q_g	5.2 nC @ V_GS = −10 V - Compatible with low-current gate drivers (e.g., MCU GPIO + 100 Ω series resistor)
V_SD	−1.2 V @ I_S = −0.61 A - Defines forward drop of integrated body diode during synchronous rectification

Pinout & Package

IRLML6302TRPBF is housed in Micro3™ (SOT-23 / TO-236AB) package - a 3-pin surface-mount outline with 1.9 mm × 1.6 mm footprint, 0.95 mm height, and gull-wing leads. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (viewed from top, marking side up, notch left).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Accepts negative V_GS to turn on; requires no level-shifting for 3.3 V logic control
Drain (D)	High-side current sink	Connected to positive rail in low-side switch configuration; handles −20 V reverse bias
Source (S)	Reference node	Bonded to PCB ground plane; defines V_GS reference and carries full load return current

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced down to −2.5 V V_GS, eliminating need for gate driver ICs in 3.3 V systems
Low R_DS(on) at 3.3 V	65 mΩ @ V_GS = −3.3 V - reduces conduction loss by >40% vs. standard −10 V gate MOSFETs
Fast body diode recovery	35 ns t_rr - enables efficient operation in synchronous buck and flyback converters
Lead-free & RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) - suitable for standard reflow assembly
Thermal performance	R_θJA = 160°C/W - allows 0.4 W continuous dissipation on 1-in² 1-oz copper with no thermal relief

Applications

USB Power Switching

Li-ion Battery Protection

Use Scenario: Enabling/disabling 5 V power to USB peripherals in portable hubs or docking stations.

IC Role / Device Role / Timing Role: Low-side load switch controlling V_BUS return path; activated by host MCU GPIO.

Use Value: 45 mΩ R_DS(on) limits voltage drop to <180 mV at 4 A, preserving USB 2.0 voltage compliance.

Use Scenario: Reverse-current blocking between parallel Li-ion cells or during charger disconnect.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing bidirectional overcurrent isolation.

Use Value: −20 V rating accommodates 4S battery packs (≤16.8 V), while fast t_rr prevents shoot-through during state transitions.

LED Driver Current Sink

Industrial Sensor Interface

Use Scenario: Constant-current sinking for high-brightness indicator LEDs in PLC I/O modules.

IC Role / Device Role / Timing Role: PWM-controlled current sink with integrated body diode for inductive kick clamping.

Use Value: −1.2 V V_SD ensures safe clamp energy dissipation without external Schottky diode.

Use Scenario: Isolating 24 V field sensor signals from 3.3 V microcontroller inputs via optocoupler driver stage.

IC Role / Device Role / Timing Role: Low-side switch driving optocoupler LED anode; gated by isolated digital signal.

Use Value: Logic-level V_GS(th) guarantees reliable turn-on with 3.3 V isolated output, reducing component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2013LFG-7	R_DS(on) = 50 mΩ @ −4.5 V; higher Q_g (6.5 nC); same SOT-23 package	Slightly higher gate charge increases switching loss in >200 kHz PWM use	Preferred when tighter V_GS(th) distribution (−1.2 to −2.2 V) is required for margin-critical 3.3 V control
SI2301DDS-T1-BE3	R_DS(on) = 90 mΩ @ −4.5 V; lower I_D (2.7 A); same pinout	Higher conduction loss limits use to ≤200 mA continuous loads	Selected where cost is primary constraint and thermal budget permits higher R_DS(on)

Compared with DMN2013LFG-7 and SI2301DDS-T1-BE3, IRLML6302TRPBF offers the lowest R_DS(on) and fastest t_rr in SOT-23, making it optimal for high-efficiency, high-frequency load switching where thermal headroom is limited.

Availability

IRLML6302TRPBF is available at Aetrix Electronics and suitable for USB power switching, Li-ion battery protection, and industrial sensor interface applications requiring stable component supply and long-term manufacturability.

Supply support for IRLML6302TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's StrongIRFET™ family-designed specifically for high-efficiency, low-voltage DC/DC conversion and load switching in battery-powered and space-constrained systems.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 150°C. Continuous operation at this limit requires derating I_D to ≤1.2 A (based on R_DS(on) increase and thermal resistance). For reliable 3.7 A operation, board layout must maintain T_J ≤125°C using ≥1-in² copper pour under the drain pad.

Can IRLML6302TRPBF be used in a high-side switch configuration?

No-it is not suitable for high-side switching without a gate driver. As a P-channel MOSFET, it requires V_G < V_S to conduct; in high-side placement, source sits at input voltage, so gate must be driven below that rail-requiring charge pump or level-shifting circuitry not supported by its logic-level design intent.

Is the body diode rated for continuous reverse conduction?

Yes-the integrated body diode supports continuous reverse current up to −0.61 A at T_J = 25°C, with −1.2 V forward voltage. For higher reverse currents, thermal limits apply: sustained >0.5 A requires PCB copper area to manage self-heating, as diode conduction contributes directly to junction temperature rise.

Does this part have avalanche rating information in the datasheet?

No-Infineon does not specify single-pulse or repetitive avalanche energy (E_AS) for IRLML6302TRPBF. The device is not characterized for unclamped inductive switching; external TVS or RC snubbers are required if used in relay or solenoid drive applications with significant L·di/dt.

IRLML6302TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 780mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 610mA, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.6 nC @ 4.45 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 97 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 540mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML6302TRPBF FAQ

1.How can I place an order for IRLML6302TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML6302TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML6302TRPBF reliable?

The price and inventory of IRLML6302TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML6302TRPBF is usually 5 days.

3.What payment methods are accepted for IRLML6302TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML6302TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML6302TRPBF?

IRLML6302TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML6302TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML6302TRPBF?

For technical support, including IRLML6302TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML6302TRPBF requirements.

6.How does Aetrix verify that IRLML6302TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLML6302TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML6302TRPBF meets industry standards.

7.What is the process for return or replacement of IRLML6302TRPBF?

All IRLML6302TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLML6302TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML6302TRPBF part is unused and in its original packaging.

Return procedure for IRLML6302TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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