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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML6401GTRPBF

Name: IRLML6401GTRPBF
Brand: Infineon Technologies
SKU: IRLML6401GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML6401GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML6401GTRPBF.pdf

Description:: MOSFET P-CH 12V 4.3A SOT-23-3

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Product details

Overview

IRLML6401GTRPBF from Infineon Technologies (formerly International Rectifier) is a P-Channel enhancement-mode HEXFET® Power MOSFET in Micro3™ (SOT-23) package, rated for -12 V V_DS, 0.05 Ω R_DS(on) at V_GS = -4.5 V, and -4.3 A continuous drain current at T_A = 25°C. It delivers ultra-low on-resistance in a low-profile (<1.1 mm) footprint, optimized for battery-powered load switching in portable electronics and PCMCIA cards.

For engineers reviewing the IRLML6401GTRPBF datasheet, IRLML6401GTRPBF pinout, IRLML6401GTRPBF application, or IRLML6401GTRPBF equivalent, key selection criteria include gate-threshold voltage (-0.40 to -0.95 V), fast switching performance (t_d(off) = 250 ns), thermal resistance (R_θJA = 75°C/W), and compatibility with 1.8 V logic-level drive in space-constrained DC-DC and power-path designs.

Technical Context

This device operates as a single P-channel silicon MOSFET with integrated body diode, designed for low-voltage, high-efficiency load switching where reverse polarity protection and compact board area are critical. Its gate threshold voltage range (-0.40 to -0.95 V) enables reliable turn-on with 1.8 V and 2.5 V microcontroller outputs, while its low R_DS(on) minimizes conduction loss in battery discharge paths.

The Micro3™ package integrates a thermally enhanced large-pad leadframe within JEDEC TO-236AB dimensions, achieving industry-leading junction-to-ambient thermal resistance (75°C/W) for SOT-23 form factor. Avalanche-rated (E_AS = 33 mJ), it supports robust operation under transient overvoltage conditions common in portable power rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum drain-source blocking voltage for 3.3 V and lower system rails
R_DS(on)	0.05 Ω @ V_GS = -4.5 V - Enables <100 mW conduction loss at 4.3 A, critical for thermal budget in sealed enclosures
I_D (continuous)	-4.3 A @ T_A = 25°C - Supports high-current load switching in handheld devices without external heatsinking
V_GS(th)	-0.55 V (typ.) - Ensures full enhancement with 1.8 V GPIO, eliminating need for level-shifting circuitry
t_d(off)	250 ns - Enables fast turn-off for pulse-width modulated power control in DC-DC converters
R_θJA	75°C/W - Highest thermal efficiency among SOT-23 P-MOSFETs, allowing sustained operation near 1 W dissipation
E_AS	33 mJ - Withstands inductive kickback from solenoids or motor windings without external snubbers

Pinout & Package

IRLML6401GTRPBF uses the Micro3™ package - a thermally enhanced variant of the standard SOT-23 (JEDEC TO-236AB) with exposed drain pad for improved heat transfer. Dimensions: 1.90 × 1.32 × 0.97 mm (L × W × H), profile <1.1 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts logic-level gate drive; low C_iss (830 pF) reduces driver loading and switching energy
2 (Drain)	High-side power path output	Internally connected to exposed thermal pad; primary heat dissipation path to PCB copper
3 (Source)	Power return reference	Connected to system ground or battery negative; defines V_GS reference for gate drive

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.05 Ω at -4.5 V enables >95% efficiency in 3.3 V load switches at 3 A
1.8 V logic-compatible gate	V_GS(th) max -0.95 V ensures guaranteed turn-on with modern low-voltage MCUs
Micro3™ thermal enhancement	Exposed drain pad lowers R_θJA by 25% vs. standard SOT-23, supporting higher continuous current
Fast switching speed	250 ns t_d(off) + 210 ns t_f allows >1 MHz PWM operation in compact DC-DC regulators
Lead-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profiles up to 260°C

Applications

Battery Protection Circuit

USB Port Power Switching

Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs for wearables.

IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling battery discharge path; activated only when valid charge voltage is present.

Use Value: 0.05 Ω R_DS(on) limits voltage drop to <215 mV at 4.3 A, preserving battery runtime and reducing thermal stress in sealed housings.

Use Scenario: Hot-swap power enable for USB 2.0 peripheral ports in docking stations.

IC Role / Device Role / Timing Role: Load switch isolating VBUS during insertion/removal; driven by USB controller GPIO.

Use Value: 1.8 V gate compatibility eliminates level shifter; fast 250 ns turn-off prevents bus glitches during hot-plug events.

PCMCIA Card Power Management

Low-Voltage DC-DC Converter Synchronous Rectifier

Use Scenario: Sequenced power-up of PCMCIA Type II card peripherals in industrial handheld terminals.

IC Role / Device Role / Timing Role: Standby power switch enabling 3.3 V rail only after host controller initialization completes.

Use Value: Low-profile (<1.1 mm) height fits within strict PCMCIA mechanical envelope; 75°C/W R_θJA sustains 1.3 W dissipation without derating.

Use Scenario: Secondary-side synchronous rectification in isolated 5 V → 3.3 V flyback converters for IoT sensors.

IC Role / Device Role / Timing Role: P-channel rectifier replacing Schottky diode to reduce forward conduction loss.

Use Value: Body diode V_SD = -1.2 V at -1.3 A enables low-loss freewheeling; Q_rr = 8–12 nC minimizes switching loss during zero-voltage transition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LFG-7	R_DS(on) = 0.045 Ω @ -4.5 V; slightly lower threshold (-0.3 to -0.8 V); same SOT-23 package	Higher peak current capability (-4.5 A) but lower avalanche rating (25 mJ vs. 33 mJ)	Preferred where maximum efficiency at 4.5 A is critical and inductive transients are minimal
SI2301BDS-T1-GE3	R_DS(on) = 0.09 Ω @ -4.5 V; higher V_GS(th) (-0.4 to -1.0 V); same Micro3 footprint	Lower cost but 80% higher conduction loss; not rated for repetitive avalanche	Suitable for non-critical, cost-sensitive battery disconnects where thermal margin exceeds 2×

Compared with DMN2053LFG-7 and SI2301BDS-T1-GE3, IRLML6401GTRPBF offers the best balance of low R_DS(on), robust avalanche capability, and guaranteed 1.8 V drive - making it optimal for space-constrained, reliability-critical portable power systems.

Availability

IRLML6401GTRPBF is available at Aetrix Electronics and suitable for battery management, USB power delivery, PCMCIA interface control, and low-voltage DC-DC converter synchronous rectification requiring stable component supply across production lifecycles.

Supply support for IRLML6401GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC power switching in portable, battery-operated, and space-constrained electronic systems.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRLML6401GTRPBF supports -3.4 A continuous drain current at T_A = 70°C with V_GS = -4.5 V, based on linear derating from 1.3 W power dissipation at 25°C and 0.01 W/°C derating factor. This value assumes no PCB copper heatsinking beyond standard JEDEC test board conditions.

Does this MOSFET require a gate resistor for stability in switching applications?

A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 125 pF) and PCB trace inductance. While not mandatory for DC operation, it improves EMI performance and prevents false triggering during fast edge transitions in PWM circuits.

Can the body diode be used for reverse-current blocking in battery backup configurations?

Yes - the integrated body diode has V_SD = -1.2 V at -1.3 A and reverse recovery time t_rr = 22–33 ns, making it suitable for low-frequency reverse-blocking (e.g., OR-ing two batteries). However, for high-frequency or high-efficiency requirements, an external Schottky diode may be preferred due to lower forward voltage.

Is the Micro3™ package compatible with standard SOT-23 pick-and-place equipment?

Yes - the Micro3™ package conforms to JEDEC TO-236AB mechanical standards and shares identical footprint and land pattern dimensions with standard SOT-23. The exposed drain pad does not affect placement; reflow profiles follow IPC-J-STD-020, with peak temperature up to 260°C for lead-free soldering.

IRLML6401GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML6401GTRPBF FAQ

1.How can I place an order for IRLML6401GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML6401GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML6401GTRPBF reliable?

The price and inventory of IRLML6401GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML6401GTRPBF is usually 5 days.

3.What payment methods are accepted for IRLML6401GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML6401GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML6401GTRPBF?

IRLML6401GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML6401GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML6401GTRPBF?

For technical support, including IRLML6401GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML6401GTRPBF requirements.

6.How does Aetrix verify that IRLML6401GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLML6401GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML6401GTRPBF meets industry standards.

7.What is the process for return or replacement of IRLML6401GTRPBF?

All IRLML6401GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLML6401GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML6401GTRPBF part is unused and in its original packaging.

Return procedure for IRLML6401GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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