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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML6401TR

Name: IRLML6401TR
Brand: Infineon Technologies
SKU: IRLML6401TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML6401TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML6401TR.pdf

Description:: MOSFET P-CH 12V 4.3A SOT-23

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLML6401TR from Infineon Technologies is a P-channel enhancement-mode HEXFET^® power MOSFET in SOT-23 (Micro3^™) package, rated for -12 V V_DS, 0.05 Ω R_DS(on) at V_GS = -4.5 V, and -4.3 A continuous drain current at 25°C. It delivers ultra-low on-resistance in a low-profile (<1.1 mm) footprint, optimized for battery-powered load switching and PCMCIA card power management.

For engineers reviewing the IRLML6401TR datasheet, IRLML6401TR pinout, IRLML6401TR application, or IRLML6401TR equivalent, key selection criteria include gate-threshold voltage (-0.55 V typ), fast switching performance (t_r = 32 ns, t_f = 210 ns), thermal resistance (R_θJA = 75°C/W), body diode recovery (t_rr = 22 ns), and 1.3 W power dissipation at 25°C ambient.

Technical Context

This device operates as a logic-level P-channel switch with gate threshold centered at -0.55 V and full enhancement achievable down to -1.8 V, enabling direct drive from 1.8 V/2.5 V/3.3 V microcontrollers. Its thermally enhanced Micro3^™ leadframe reduces junction-to-ambient thermal resistance while maintaining standard SOT-23 PCB layout compatibility.

The integrated body diode exhibits low forward voltage (-1.2 V at -1.3 A) and controlled reverse recovery (Q_rr = 8.0 nC, t_rr = 22 ns), supporting synchronous rectification and bidirectional current handling in compact DC-DC and load-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for low-voltage P-channel load switching
R_DS(on)	0.05 Ω @ V_GS = -4.5 V - Enables <100 mW conduction loss at 4.3 A
I_D (cont)	-4.3 A @ T_A = 25°C - Supports high-current portable system loads
t_r/t_f	32 ns / 210 ns - Fast edge rates reduce switching losses in PWM control
R_θJA	75°C/W - Thermal performance enables 1.3 W operation without heatsink at 25°C ambient
V_GS(th)	-0.55 V (typ) - Ensures turn-on with 1.8 V logic outputs
Q_g	10 nC (typ) - Low gate charge minimizes driver power and propagation delay

Pinout & Package

IRLML6401TR uses the SOT-23 package variant branded Micro3^™, featuring a thermally enhanced large-pad leadframe and low profile (<1.1 mm). The package maintains standard SOT-23 PCB footprint while improving thermal dissipation by ~25% over conventional variants.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate (G)	Control terminal	Receives logic-level voltage to modulate channel conductivity; requires no external level-shifting for 1.8–3.3 V MCU drive
2 - Source (S)	Reference node	Connected to positive rail in high-side switch configuration; serves as return path for body diode conduction
3 - Drain (D)	Power output node	Switches load to ground; handles pulsed currents up to -34 A with avalanche-rated ruggedness (E_AS = 33 mJ)

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≤ -1.8 V, compatible with 1.8 V/2.5 V/3.3 V I/O standards
Ultra-low R_DS(on)	0.05 Ω at -4.3 A enables <100 mW conduction loss in space-constrained battery systems
Thermally enhanced Micro3^™	Standard SOT-23 footprint with improved R_θJA (75°C/W) and lower junction temperature rise
Fast body diode	22 ns reverse recovery time and 8.0 nC Q_rr support efficient freewheeling in buck and load-switch circuits

Applications

Battery Protection Circuit

PCMCIA Card Power Switch

Use Scenario: Isolating main battery from backup circuitry during deep sleep or fault conditions.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling battery discharge path.

Use Value: 0.05 Ω R_DS(on) limits voltage drop to <220 mV at 4.3 A, preserving battery runtime and regulation margin.

Use Scenario: Enabling/disabling power to PCMCIA peripherals in ultrathin laptops.

IC Role / Device Role / Timing Role: Compact, low-profile power gate with fast turn-off to meet hot-swap timing requirements.

Use Value: <1.1 mm height fits within PCMCIA Type II envelope; 210 ns fall time ensures clean power sequencing.

USB OTG Power Delivery

Low-Voltage Load Switch

Use Scenario: Controlling VBUS power path between host and peripheral in dual-role USB devices.

IC Role / Device Role / Timing Role: Bidirectional current-handling P-channel switch with integrated body diode.

Use Value: -1.2 V V_SD at -1.3 A and 22 ns t_rr minimize forward drop and reverse recovery loss during role swaps.

Use Scenario: Managing power to sensors, LEDs, or RF modules in wearables and IoT nodes.

IC Role / Device Role / Timing Role: Logic-compatible load switch with minimal quiescent current and fast enable response.

Use Value: 100 nA gate leakage and 11 ns t_d(on) ensure low standby power and rapid subsystem wake-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LW-7	R_DS(on) = 0.045 Ω @ -4.5 V, but V_DS = -20 V and higher Q_g (13 nC)	Higher voltage rating supports wider input range but increases gate drive demand	Select when system requires >12 V blocking margin or higher avalanche energy
SI2301DDS-T1-GE3	R_DS(on) = 0.095 Ω @ -4.5 V, lower cost, same SOT-23 package	Higher conduction loss limits use to ≤2 A loads; not suitable for 4.3 A peak demands	Select for cost-sensitive, lower-current applications where thermal headroom permits

Compared with DMN2053LW-7 and SI2301DDS-T1-GE3, IRLML6401TR offers optimal balance of low R_DS(on), fast switching, and 1.8 V logic compatibility in the smallest possible footprint-making it preferred for space- and efficiency-critical 12 V battery systems.

Availability

IRLML6401TR is available at Aetrix Electronics and suitable for battery protection circuits, PCMCIA card power switches, USB OTG power delivery paths, and low-voltage load switching applications requiring stable component supply and long-term manufacturability.

Supply support for IRLML6401TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRLML series targets ultra-compact, high-efficiency discrete power switching-designed specifically for portable, battery-operated, and space-constrained applications demanding logic-level drive and minimal thermal footprint.

FAQ

What is the maximum safe operating voltage for IRLML6401TR?

The absolute maximum drain-to-source voltage (V_DS) is -12 V, with a temperature coefficient of -0.007 V/°C. Operation above this rating risks avalanche breakdown even with short pulses; design margins should maintain ≤ -10.8 V under worst-case transient conditions per Fig 8 SOA curves.

Can IRLML6401TR be driven directly from a 1.8 V GPIO?

Yes-its typical gate threshold voltage is -0.55 V, and it achieves full enhancement at V_GS = -1.8 V (R_DS(on) ≤ 0.125 Ω). Measured transfer characteristics (Fig 3) confirm strong channel conduction at 1.8 V drive, eliminating need for external level shifters in most portable designs.

Does IRLML6401TR include avalanche ruggedness rating?

Yes-it is rated for single-pulse avalanche energy E_AS = 33 mJ (tested per JEDEC JESD24-1), with validated capability up to -4.3 A and -12 V. This enables reliable operation in inductive load switching without external snubbers, as confirmed by Fig 10 and test condition notes.

What is the thermal performance difference between IRLML6401TR and standard SOT-23 MOSFETs?

IRLML6401TR's Micro3^™ construction achieves R_θJA = 75°C/W (vs. ~150–200°C/W for generic SOT-23), due to its enlarged copper pad and optimized leadframe. This allows 1.3 W dissipation at 25°C ambient-nearly double that of conventional equivalents-without derating or board-level thermal enhancements.

IRLML6401TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

IRLML6401TR FAQ

1.How can I place an order for IRLML6401TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML6401TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML6401TR reliable?

The price and inventory of IRLML6401TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML6401TR is usually 5 days.

3.What payment methods are accepted for IRLML6401TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML6401TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML6401TR?

IRLML6401TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML6401TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML6401TR?

For technical support, including IRLML6401TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML6401TR requirements.

6.How does Aetrix verify that IRLML6401TR is sourced from the original manufacturer or authorized distributors?

All IRLML6401TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML6401TR meets industry standards.

7.What is the process for return or replacement of IRLML6401TR?

All IRLML6401TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLML6401TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML6401TR part is unused and in its original packaging.

Return procedure for IRLML6401TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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