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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML6402GTRPBF

Name: IRLML6402GTRPBF
Brand: Infineon Technologies
SKU: IRLML6402GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML6402GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML6402GTRPBF.pdf

Description:: MOSFET P-CH 20V 3.7A SOT23

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Product details

Overview

IRLML6402GTRPBF from Infineon Technologies (formerly International Rectifier) is a P-Channel enhancement-mode HEXFET® Power MOSFET in Micro3™ (SOT-23) package, designed for low-voltage load switching and battery protection circuits. It features -20 V V_DS, 0.065 Ω R_DS(on) at V_GS = -4.5 V, -3.7 A continuous drain current at 25°C, <1.1 mm profile, and lead-free/halogen-free construction - enabling space-constrained portable electronics power management.

For engineers reviewing the IRLML6402GTRPBF datasheet, IRLML6402GTRPBF pinout, IRLML6402GTRPBF application, or IRLML6402GTRPBF equivalent, key selection criteria include verified P-channel low-side switching capability, thermal performance in SOT-23 footprint, body diode conduction behavior, and gate drive compatibility with 2.5–4.5 V logic-level controllers.

Technical Context

This device operates as a normally-off P-channel switch with gate threshold voltage of -0.40 to -1.2 V, supporting direct interface with 3.3 V and 5 V microcontrollers. Its fast switching (t_d(on) = 350 ns, t_f = 381 ns) and low gate charge (Q_g = 8.0–12 nC) reduce switching losses in high-frequency DC-DC and load-switching topologies.

The integrated body diode exhibits V_SD = -1.2 V at -1.0 A and reverse recovery time t_rr = 29–43 ns, making it suitable for synchronous rectification and bidirectional current paths where controlled reverse conduction is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail protection
R_DS(on)	0.065 Ω @ V_GS = -4.5 V - Enables <100 mW conduction loss at 3.7 A, critical for thermally constrained PCBs
I_D (25°C)	-3.7 A - Continuous drain current rating at ambient temperature, defining max load-handling capacity
P_D (25°C)	1.3 W - Power dissipation limit in still air, directly tied to thermal resistance (R_θJA = 75°C/W)
Q_g	8.0–12 nC - Total gate charge determining drive strength requirement and switching speed scalability
t_f	381 ns - Fall time defining minimum achievable PWM period and EMI control in load-switching applications
V_GS(th)	-0.40 to -1.2 V - Gate threshold range ensuring reliable turn-on with standard logic-level outputs

Pinout & Package

IRLML6402GTRPBF uses the Micro3™ package - a thermally enhanced variant of SOT-23 (JEDEC TO-236AB) with exposed drain pad for improved heat transfer. Package dimensions: 2.9 × 1.6 × 1.1 mm (L × W × H), footprint-compatible with standard SOT-23 land patterns but optimized for lower R_θJA.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system ground or higher-potential rail depending on low-side vs. high-side configuration
2 (Gate)	Control terminal for channel formation	Requires negative V_GS relative to source; compatible with 3.3 V GPIO when source is at V_IN
3 (Drain)	Main current-carrying terminal (connected to exposed pad)	Exposed copper pad serves as primary thermal path and must be soldered to PCB copper pour for rated power handling

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.065 Ω at -4.5 V enables efficient 3.7 A switching without heatsink in portable designs
Micro3™ package	SOT-23 footprint with thermal pad delivers best-in-class R_θJA = 75°C/W for its size
Logic-level gate drive	Operates fully enhanced down to -2.5 V V_GS, eliminating need for level-shifting in 3.3 V systems
Fast body diode	t_rr = 29–43 ns and Q_rr = 11–17 nC support moderate-frequency freewheeling in buck converters

Applications

Battery Protection Circuit

USB Port Power Switching

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as low-side load switch with active gate control for fault isolation.

Use Value: 0.065 Ω R_DS(on) limits voltage drop to <240 mV at 3.7 A, preserving battery runtime and thermal margin.

Use Scenario: Controlled 5 V power delivery to USB peripherals with inrush current limiting.

IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS under MCU command with soft-start via gate RC network.

Use Value: Fast 381 ns fall time ensures clean power sequencing; <1.1 mm height fits ultra-thin USB-C modules.

PCMCIA/CardBus Power Control

IoT Sensor Node Power Gating

Use Scenario: Hot-swap power enable for legacy PCMCIA cards in industrial laptops.

IC Role / Device Role / Timing Role: High-side switch (source tied to 3.3 V rail) managing card insertion detection and power ramp.

Use Value: -0.40 V V_GS(th) min guarantees turn-on with minimal gate drive overhead, reducing BOM count.

Use Scenario: Duty-cycled power gating of BLE radios and environmental sensors in coin-cell-powered nodes.

IC Role / Device Role / Timing Role: Low-quiescent-load switch disconnecting non-active subsystems during deep sleep.

Use Value: IDSS < 1 μA at -20 V ensures <100 nA leakage, extending multi-year battery life in sleep mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(on) = 0.052 Ω @ -4.5 V; slightly lower threshold (-0.35 V typ); same SOT-23-3 package	Better conduction efficiency at high current; tighter V_GS(th) distribution improves batch consistency	Select when minimizing I²R loss at >3 A is prioritized over gate drive margin
SI2301BDS-T1-GE3	R_DS(on) = 0.115 Ω @ -4.5 V; higher R_DS(on) but wider V_GS(th) range (-0.4 to -1.5 V); same footprint	Higher on-resistance increases conduction loss but offers greater noise immunity in noisy environments	Select when robustness against gate voltage transients outweighs efficiency requirements

Compared with DMN2020LFG-7 and SI2301BDS-T1-GE3, IRLML6402GTRPBF delivers optimal balance of low R_DS(on), predictable logic-level turn-on, and proven thermal performance in thin-profile portable assemblies - making it preferred for space- and thermal-limited battery management.

Availability

IRLML6402GTRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, PCMCIA hot-swap controllers, and IoT sensor node power gating requiring stable component supply and long-term manufacturability.

Supply support for IRLML6402GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

IRLML6402GTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC power control in space-constrained consumer and portable electronics.

FAQ

What is the maximum safe operating junction temperature for IRLML6402GTRPBF?

The absolute maximum junction temperature is +150°C, with continuous operation recommended up to +125°C. Derating begins at 25°C ambient at 0.01 W/°C, and thermal design must account for R_θJA = 75°C/W with proper PCB copper area under the exposed drain pad.

Can IRLML6402GTRPBF be used in high-side switching configurations?

Yes - as a P-channel device, it supports high-side switching when the source is connected to the positive rail and gate is driven below source potential. However, full enhancement requires gate voltage ≤ (V_IN – 2.5 V), so level-shifting may be needed for 5 V rails with 3.3 V controllers.

Does IRLML6402GTRPBF have avalanche rating, and what is its single-pulse energy capability?

Yes - it is rated for repetitive avalanche with E_AS = 11 mJ (tested at I_AS = -3.7 A, L = 1.65 mH, starting T_J = 25°C). This supports robustness against inductive switching transients in relay drivers and motor control interfaces.

Is the body diode suitable for continuous reverse conduction in synchronous rectification?

The body diode has V_SD = -1.2 V at -1.0 A and t_rr = 29–43 ns, making it usable for low-duty-cycle freewheeling. For sustained reverse current, external Schottky diode parallel placement is recommended to avoid excessive forward drop and heating.

IRLML6402GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 633 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML6402GTRPBF FAQ

1.How can I place an order for IRLML6402GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML6402GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML6402GTRPBF reliable?

The price and inventory of IRLML6402GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML6402GTRPBF is usually 5 days.

3.What payment methods are accepted for IRLML6402GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML6402GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML6402GTRPBF?

IRLML6402GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML6402GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML6402GTRPBF?

For technical support, including IRLML6402GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML6402GTRPBF requirements.

6.How does Aetrix verify that IRLML6402GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLML6402GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML6402GTRPBF meets industry standards.

7.What is the process for return or replacement of IRLML6402GTRPBF?

All IRLML6402GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLML6402GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML6402GTRPBF part is unused and in its original packaging.

Return procedure for IRLML6402GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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